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Defects in oxide glasses

2005

An insight into the present understanding of point defects in the simplest and the most radiation-resistant oxide glass, glassy silicon dioxide (silica) is presented. The defects and their generation processes in glassy and α-quartz forms of silicon dioxide are significantly different. The only defect, confirmed to be similar in both materials, is oxygen vacancy. In silica, additional defects of dangling bond type are generated from precursor sites formed by strained Si-O bonds, and by modifier ions. The optical absorption spectra of silica are dominated by paramagnetic dangling bond type defects: silicon dangling bond (“E′-center”) and oxygen dangling bond (“non-bridging oxygen hole center…

Photoinduced Cluster Formation of Coumarin-Labeled Organosilicon Micronetworks

2000

Calculations of the geometry and optical properties ofFMgcenters and dimer (F2-type) centers in corundum crystals

1995

CALCULATIONS OF THE GEOMETRY AND OPTICAL-PROPERTIES OF F-MG CENTERS AND DIMER (F-2-TYPE) CENTERS IN CORUNDUM CRYSTALS

Challenges in the Electrochemical Synthesis of Si 2 Cl 6 Starting from Tetrachlorosilane and Trichlorosilane

2022

Computer Simulations of Undercooled Fluids and Glasses

2007

An introduction to the Molecular Dynamics (MD) simulation of chemically realistic models for undercooled fluids and glasses is given, emphasizing silicatic materials such as molten silicon dioxide and its mixtures with sodium oxide and aluminium oxide, and comparing the simulation results to experimental data whenever possible.

Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure

2000

Abstract The optical absorption of the diluted magnetic semiconductor Zn1−xCOxSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6−1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co2+(3d7) internal transition 4A2(F)→+4T1(P) and (ii) an onset in the energy range 2−2.7eV which redshifts with pressure (−8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co2+(3d7) levels.

Inverse dispersion design in silicon waveguides

2014

We present a numerical tool to find the cross-section geometry of silicon-oninsulator waveguides that leads to a target dispersion profile. In < 10 iterations, we achieve geometries providing ultraflattened dispersion over 350 nm bandwidth.

ChemInform Abstract: Observation of New Oscillatory Phenomena During the Electrochemical Anodization of Silicon.

2010

This paper reports the observation of large undamped voltage oscillations during the anodic polarization of silicon in electrol yte containing a combination of acids. One of them stimulates oxide growth and the other its chemical dissolution (in the present c ase, (0.01-0.1 M H3PO4) + (0.001- 0.01 M HF). This temporal patterning of the anodization process is shown to be due to the formation of a thin (50-90 nm) oxide layer at the sample surface and its subsequent lifting-off. The mechanism of oxide detachment i s thought to be an isotropic growth of micropores at the oxide/silicon interface triggered on by changes of electrochemical condi tions there.

Biosilica

2012

Biomineralization, biosilicification in particular (i.e. the formation of biogenic silica, SiO(2)), has become an exciting source of inspiration for the development of novel bionic approaches following 'nature as model'. Siliceous sponges are unique among silica-forming organisms in their ability to catalyze silica formation using a specific enzyme termed silicatein. In this study, we review the present state of knowledge on silicatein-mediated 'biosilica' formation in marine demosponges, the involvement of further molecules in silica metabolism and their potential applications in nano-biotechnology and bio-medicine. While most forms of multicellular life have developed a calcium-based skel…

Silicon-guided rearrangement of 10-methyl-4,5-epoxydecalins. Methyl versus methylene migration

2003

The Lewis acid-promoted rearrangement of two 10-methyl-4,5-epoxydecalins bearing a trimethylsilyl (TMS) group on C-1 or C-9 has been studied. Migration of the C-9 methylene group to C-5 is the major reaction pathway when the TMS and the oxirane groups are on the same ring while methyl migration results exclusively when they are on different rings.