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showing 10 items of 3539 documents

scheda 338. Anello con gemma incisa

2008

scheda scientifica di anello con gemma incisa raffigurante Hermes, sec. II-III d.C., conservato al Museo Archeologico di Palermo

glittica tardoantica museo archeologico di Palermo iconografia di Hermes
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Studies on Late Antique and Medieval Germanic Glossography and Lexicography in Honour of Patrizia Lendinara

2018

glosses glossary glossography lexicon lexicography Old Germanic Launguages Latin Anglo-LatinSettore L-FIL-LET/15 - Filologia GermanicaMedieval Germanic Glossography Medieval Lexicography Medieval Latin Old English Gothic Old High German Old Saxon Old Norse
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Xarxes semàntiques en el lèxic disponible de València. Una aproximació al lexicó bilingüe

2016

This work deals with the situation of languages in contact and explores the nature of bilingual lexicon by studying lexical availability. Based on the results published in 2010 in Lèxic disponible de València, and in relation to 'town' as the center of interest, the study applied a new analytical tool called DispoGrafo, which enabled us to observe issues related to the construction and organization of the mental lexicon, for example, the incidence or profitability of facilitating semantic-priming-in clusters made up of three or more closely linked elements. The sample was obtained from 464 high school students of 2nd baccalaureate in the Valencia province, and was established to represent t…

graphssemantic networksLinguistics and LanguageLiterature and Literary TheoryMental lexiconbiologyComputer scienceP1-1091biology.organism_classificationLanguage and LinguisticsLinguisticsbilingual lexiconCiència EnsenyamentBilingual lexiconlexical availabilityPC1-5498Llenguatge i llengües EnsenyamentPhilology. LinguisticsValenciaRomanic languagesStudia Romanica Posnaniensia
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Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

2018

InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…

hapetusMaterials science02 engineering and technologyHigh-electron-mobility transistor01 natural sciences114 Physical scienceslaw.inventionAtomic layer depositionX-ray photoelectron spectroscopyInAslawsynchrotron0103 physical sciencesGeneral Materials Science010302 applied physicsta114business.industryDangling bondatomikerroskasvatus021001 nanoscience & nanotechnologyIII-V semiconductorCrystallographic defectElastic recoil detectionoxidation (active)Electron diffractionatomic layer depositionOptoelectronicsScanning tunneling microscope0210 nano-technologybusinessphotoelectron
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Low temperature heat capacity of phononic crystal membranes

2016

Phononic crystal (PnC) membranes are a promising solution to improve sensitivity of bolometric sensor devices operating at low temperatures. Previous work has concentrated only on tuning thermal conductance, but significant changes to the heat capacity are also expected due to the modification of the phonon modes. Here, we calculate the area-specific heat capacity for thin (37.5 - 300 nm) silicon and silicon nitride PnC membranes with cylindrical hole patterns of varying period, in the temperature range 1 - 350 mK. We compare the results to two- and three-dimensional Debye models, as the 3D Debye model is known to give an accurate estimate for the low-temperature heat capacity of a bulk sam…

heat capacityWork (thermodynamics)Materials scienceGeneral Physics and Astronomy02 engineering and technology01 natural sciencesHeat capacitysymbols.namesakechemistry.chemical_compoundThermal conductivity0103 physical scienceslämpökapasiteetti010306 general physicsDebye modelDebyephononic crystal membranesCondensed matter physicsta114Atmospheric temperature range021001 nanoscience & nanotechnologylcsh:QC1-999CrystallographyMembraneSilicon nitridechemistrysymbols0210 nano-technologylow temperatureslcsh:Physics
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Minimum detection limits and applications of proton and helium induced X-ray emission using transition-edge sensor array

2017

Abstract We have determined minimum detection limits, MDLs, for elements 14 ⩽ Z ⩽ 86 using a transition-edge sensor array, TES array, and as a comparison using an Amptek X-123SDD silicon drift detector, SDD. This was done using a 3 MeV proton beam and a 5.1 MeV helium beam. MDLs were determined for a thin film sample on top of C substrate, and for a bulk sample containing mostly Al. Due to the higher peak-to-background ratio, lower detection limits were obtainable using the TES array for most of the elements. However, for elements 30 ⩽ Z ⩽ 45 the performance of the TES array was not as good as the SDD performance. This is due to the limitations of the TES used at energies >10 keV. The great…

helium-induced x-ray emissionNuclear and High Energy PhysicsSilicon drift detectorProtonAnalytical chemistrychemistry.chemical_element02 engineering and technologySubstrate (electronics)01 natural sciencesSensor array0103 physical sciencesPIXEThin film010306 general physicsInstrumentationHeliumPhysicsta114minimum detection limit021001 nanoscience & nanotechnologychemistryTransition edge sensor0210 nano-technologyTESBeam (structure)
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Alkylthio-tetrasubstituted μ-Nitrido Diiron Phthalocyanines: Spectroelectrochemistry, Electrical Properties, and Heterojunctions for Ammonia Sensing.

2020

Alkylthio-tetrasubstituted μ-nitrido diiron phthalocyanine complexes are synthesized with n-butyl, iso-butyl, tert-butyl, and n-hexadecyl alkyl moieties. For the first time, a spectroelectrochemical investigation of μ-nitrido diiron phthalocyanines is achieved at all the redox steps. The complexes are stable in all their redox states, unlike their unsubstituted analogues. The interest of the present complexes is to prepare sensing devices by a solution processing method. Films are characterized by electronic absorption and Raman spectroscopies. Electrical measurements on resistors show the highly resistive behavior of these complexes, whatever the chain length. However, when combined with t…

heterojunctionchemistry.chemical_element010402 general chemistryPhotochemistry01 natural sciencesRedoxammoniagas sensorInorganic Chemistrychemistry.chemical_compoundsymbols.namesake[CHIM]Chemical SciencesElectrical measurementsconductometric transducerPhysical and Theoretical Chemistrymolecular materialsAlkylComputingMilieux_MISCELLANEOUSchemistry.chemical_classification010405 organic chemistryIntrinsic semiconductorHeterojunctionLutetium0104 chemical sciencesphthalocyaninechemistryPhthalocyaninesymbolsRaman spectroscopyInorganic chemistry
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The Silicon Photomultiplier: a promising photodetector for biosensing applications

high sensitivity.Silicon Photomultiplier; biosensing applications; fluorescence; bioluminescence; high sensitivity.fluorescencebiosensing applicationSilicon PhotomultiplierbioluminescenceSettore ING-INF/01 - Elettronica
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Les sources textuelles de l’histoire urbaine d’Antioche sur l’Oronte : pour un Lexicon Topographicum Antiochenum

2010

This chronicle is a summary of the Atelier International jeudi 21 et vendredi 22 janvier 2010, Paris-8/École Normale Les sources textuelles de l’histoire urbaine d’Antioche sur l’Oronte : pour un Lexicon Topographicum

histoire urbaineSettore L-ANT/03 - Storia RomanaAntiochLexicon TopographicumLibaniu
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Anomalous performance enhancement effects in Ruthenium-based Dye Sensitized Solar Cells

2017

Dye Sensitized Solar Cells (DSSCs) are nowadays more and more employed since they present lower production costs than traditional silicon photovoltaic devices. An interesting phenomenon affecting such devices consists in the fact that current density-voltage (J-V) characteristic can depend on the history of the cell prior to the measurement, which often can be assimilated to an anomalous hysteresis effect. In this work, we study such phenomenon on Ruthenium-based DSSCs through a series of measurements performed after applying different values of external electrical field to the cell. The measurements have been carried out both under simulated sunlight (AM1.5G - 1000 W/m2) and in the dark. W…

hysteresiMaterials scienceField (physics)SiliconRenewable Energy Sustainability and the Environmentbusiness.industry020209 energyDye Sensitized Solar CellPhotovoltaic systemEnergy Engineering and Power Technologychemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiBiasinglight soaking02 engineering and technologySettore ING-INF/01 - ElettronicaTemperature measurementRutheniumphotovoltaicHysteresisDye-sensitized solar cellchemistry0202 electrical engineering electronic engineering information engineeringOptoelectronicsbusiness2017 6th International Conference on Clean Electrical Power (ICCEP)
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