Search results for "JUNCTION"

Magnetic nanoparticles between electrodes of tunnel junction: anomalous tunnel conductance

2002

Abstract Magnetic particles of microscopic size can be created in the process of Ni, Fe and Co mechanically controllable break junctions fabrication and trapped between the electrodes by magnetic dipole forces. Tunneling between the protruding nanoparticle and the sample electrode shows clear distinctions from the usual junctions: heavy deviation of the current–distance I(z) dependence from the expected exponential behavior at electrode separations z below 4.0– 4.5 A and on numerous occasions a sudden jump-like decrease of the tunnel current at z≈1.5– 2.0 A . Possible mechanisms behind observed anomalies including the short-range magnetic exchange coupling are discussed.

Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy

2014

The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off-stoichiometric Co${}_{2}$MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co${}_{2}$Mn${}_{1.29}$Si. In this paper, we explain the behavior of the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co…

Electronic structure of EuO spin filter tunnel contacts directly on silicon

2011

We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintr…

Isolation and molecular characterization of brain microvascular endothelial cells from human brain tumors.

2002

Brain tumor formation and growth is accompanied by the proliferation and infiltration of blood capillaries. The phenotypes of endothelial cells that make up capillaries are known to differ not only in the tissues in which endothelial cells are located but also as a result of the microenvironment to which they are exposed. For this reason, primary cultures of brain endothelial cells were isolated from human brain tumors removed by surgery and compared with cells from normal tissue. The primary confluent monolayers that grew out of isolated capillary fragments consisted of closely associated, elongated, fusiform-shaped cells. But brain tumor-derived endothelial cells in culture exhibited sign…

2015

Previewing distracters enhances the efficiency of visual search. Watson and Humphreys (1997) proposed that the preview benefit rests on visual marking, a mechanism which actively encodes distracter locations at preview and inhibits them afterwards at search. As Watson and Humphreys did, we used a letter-color search task to study constraints of visual marking in conjunction search and near-efficient single-feature search with single-colored and homogeneous distracter letters. Search performance was measured for fixed target and distracter features (block design) and for randomly changed features across trials (random design). In single-feature search there was a full preview benefit for bot…

300°C SiC Blocking Diodes for Solar Array Strings

2009

Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…

Spin and charge currents driven by the Higgs mode in high-field superconductors

2020

The Higgs mode in superconducting materials describes slowly decaying oscillations of the order parameter amplitude. We demonstrate that in superconductors with a built-in spin-splitting field the Higgs mode is strongly coupled to the spin degrees of freedom, allowing for the generation of time-dependent spin currents. Converting such spin currents to electric signals by spin-filtering elements provides a tool for the second-harmonic generation and the electrical detection of the Higgs mode generated by the external irradiation. The nonadiabatic spin torques generated by these spin currents allow for the magnetic detection of the Higgs mode by measuring the precession of the magnetic moment…

1<sup>st</sup> International Workshop on Sustainable Internet and Internet for Sustainability (SustaInet 2011

2011

We are pleased to present the proceedings of the First International Workshop on Sustainable Internet and Internet for Sustainability (SustaInet 2011), held in conjunction with WoWMoM 2011.

Buildup and structure of theInSe∕Ptinterface studied by angle-resolved photoemission and x-ray absorption spectroscopy

2006

The atomic structure and the electronic nature of the $\mathrm{In}\mathrm{Se}∕\mathrm{Pt}$ interface have been studied by x-ray absorption spectroscopy and angle-resolved photoemission, respectively. By these measurements, it has been found that Pt atoms equally incorporate into two trigonal-prismatic intralayer positions existing within the InSe layer, although, at low Pt coverage, Pt atoms seem to prefer one of these sites, where they have a lower interaction with Se atoms. The atomic structure of the $\mathrm{In}\mathrm{Se}∕\mathrm{Pt}$ interface appears to determine its electronic behavior as Pt deposition increases. At initial stages of Pt diffusion, isolated Pt atoms act as a surface …

IV-Curves of tunnel junction arrays at lowered temperature by numerical simulation

1996

We have numerically investigated the effect of lowered T on the performance of the Coulomb blockade thermometer, which has been demostrated to yield primary thermometry in the high T limit where thermal excitations compete with the Coulomb blockade. The thermometer is formed by an array of tunnel junctions whose differentiated IV—curve is used to determine the temperature. The IV—curves were calculated by computer simulations and we have obtained corrections to the analytic high T behaviour due to the lowered temperature.