Search results for "Layers"

showing 10 items of 335 documents

Photoelectrochemical Techniques in Corrosion Studies

2005

Photoelectrochemical Techniques Corrosion layers passive filmsMaterials scienceMetallurgyCorrosion
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

PhotoluminescenceMaterials sciencePhononExcitonBinding energyPolaritonsGeneral Physics and AstronomyMolecular physicssymbols.namesakeCondensed Matter::Materials Science:FÍSICA [UNESCO]PolaritonZinc compoundsThin filmPhotoluminescencebusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICAII-VI semiconductorsZinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layerssymbolsOptoelectronicsExcitonsRaman spectrabusinessRaman spectroscopyRaman scattering
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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Visible Photoluminescence of Variable-Length Zinc Oxide Nanorods Embedded in Porous Anodic Alumina Template for Biosensor Applications

2021

Zinc oxide (ZnO) and porous anodic aluminum oxide (PAAO) are technologically important materials, rich with features that are of interest in optical applications, for example, in light-emitting and sensing devices. Here, we present synthesis method of aligned ZnO nanorods (NR) with 40 nm diameter and variable length in 150 to 500 nm range obtained by atomic layer deposition (ALD) of ZnO in pores of continuously variable thickness PAAO. The relative intensity of yellow (1.99 eV), green (2.35 eV), and blue (2.82 eV) photoluminescence (PL) components originating from the different types of defects, varied with non-monotonic dependency on the composite film thickness with a Fabry–Pérot like mod…

PhotoluminescenceMaterials sciencemultilayerschemistry.chemical_element02 engineering and technologyZinc010402 general chemistry01 natural sciencesAtomic layer depositionhybrid materialsMaterials ChemistryPorosityporous anodic aluminabusiness.industryzinc oxideSurfaces and InterfacesEngineering (General). Civil engineering (General)021001 nanoscience & nanotechnologyFluorescence0104 chemical sciencesSurfaces Coatings and Filmschemistryfluorescent biosensing:NATURAL SCIENCES [Research Subject Categories]self-organized templatesOptoelectronicsNanorodphotoluminescenceTA1-20400210 nano-technologybusinessHybrid materialBiosensorCoatings
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4-(Diethylamino)salicylaldehyde-based twin compounds as NLO-active materials

2016

Abstract 4-(Diethylamino)salicylaldehyde-based twin compounds containing 1,3-indandione and 1,3-bisdicianovinylindane moieties were synthesized and their thermal, optical, photophysical, electrochemical, photoelectrical and nonlinear optical properties were studied. The synthesized compounds form glasses with the glass transition temperatures ranging from 79 to 103 °C. Photoluminescence spectra of the solutions of compounds exhibited red-shifts with the increase of the solvent polarity that was caused by the positive solvatochromic effect. The linear dependencies between the position of the photoluminescence maxima of compounds and the empirical parameter E T (30) of the different solvents …

PhotoluminescenceThin layers13-IndandioneProcess Chemistry and TechnologyGeneral Chemical EngineeringSolvatochromismAnalytical chemistry02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyElectrochemistry01 natural sciences0104 chemical scienceschemistry.chemical_compoundSalicylaldehydechemistryIonizationPhysical chemistry0210 nano-technologyGlass transitionDyes and Pigments
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Role of dispersion on zero-average-index bandgaps

2009

We consider periodic multilayers combining ordinary positive index materials and dispersive metamaterials with negative index in some frequency ranges. These structures can exhibit photonic bandgaps which, in contrast with the usual Bragg gaps, are not based on interference mechanisms. Changing the dispersion models for the constituent metamaterial, we investigate its role in the production of zero-average-index bandgaps. In particular, we show the effect of each constitutive parameter on both bandgap edges. Finally, we give some approximated analytical expressions in terms of average parameters for the determination of the upper and lower limits of the zero-average refractive-index bandgap…

PhysicsCondensed matter physicsbusiness.industryWave propagationBand gapCiencias FísicasPHOTONIC CRYSTALSPhysics::OpticsMetamaterialStatistical and Nonlinear PhysicsInterference (wave propagation)Atomic and Molecular Physics and OpticsNEGATIVE INDEXAstronomíaCondensed Matter::Materials ScienceOpticsPHOTONIC BAND GAPNegative refractionDispersion (optics)MULTILAYERSPhotonicsbusinessRefractive indexCIENCIAS NATURALES Y EXACTAS
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Cluster growth with long-range interactions

1996

Abstract Growth models in which the morphology depends on interactions of the type V(r) = C r n are presented. The growth algorithms are generalizations of DLA. The particles diffuse on a triangular lattice and eventually either stick to the cluster or are lost. Several processes are simulated in this way: in one case only pure sticking is taken into account, in another case evaporation and rearrangement are also allowed to occur. In the former case (with attractive interactions) the clusters exhibit a highly symmetric shape (a sixfold star) whose detailed structure depends on n , C kT , and time. In the latter case (studied with repulsive dipolar interactions) the tendency to ramification …

PhysicsMonolayersLangmuirRange (particle radiation)Condensed matter physicsRamification (botany)Metals and AlloysEvaporationSurfaces and InterfacesComputer simulationSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsClustersDipoleChemical physicsClusters Computer simulation Surface morphology MonolayersMonolayerMaterials ChemistryCluster (physics)Hexagonal latticeSurface morphology
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Development and characterization of a Drop-on-Demand inkjet printing system for nuclear target fabrication

2017

Abstract A novel target preparation method based on Drop-on-Demand (DoD) inkjet printing has been developed. Conventional preparation methods like the electrochemical method “Molecular Plating” or the “Polymer-Assisted Deposition Method” are often limited, e.g., concerning the dimensions and geometries of depositions or by the requirement for electrically conducting substrates. Here, we report on the development of a new technique, which overcomes such limits by using a commercially available DoD dispenser. A variety of solutions with volumes down to 5 nL can be dispensed onto every manageable substrate. The dispensed volumes were determined with a radioactive tracer and the deposits of eva…

PhysicsNuclear and High Energy PhysicsRadioactive tracerThin layersFabricationGraphenechemistry.chemical_elementNanotechnology02 engineering and technologySubstrate (printing)010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionCharacterization (materials science)chemistrylawPlating0210 nano-technologyInstrumentationTitaniumNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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ODIn — A setup for Off-line Deposit Irradiations of thin layers for nuclear physics applications

2020

Abstract A table top setup was developed for the irradiation of thin layers with low-energy electrons and ions of gaseous species. This serves to gain a better understanding of the chemical microprocesses involved during irradiations. The gained insights will complement the understanding of heavy-ion beam induced transformations at on-line facilities and will be used to develop an accelerator-independent method to transform freshly produced targets into a long-term stable form. The pilot experiment for these Off-line Deposit Irradiations (ODIn) is installed at the Helmholtz Institute Mainz. The setup, beam characterization and first commissioning are described.

PhysicsNuclear and High Energy PhysicsThin layers010308 nuclear & particles physicsbusiness.industryElectron01 natural sciencesCharacterization (materials science)IonOptics0103 physical sciencesIrradiation010306 general physicsbusinessInstrumentationOff lineBeam (structure)Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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