Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
2014
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …
Magnetism of Co-doped ZnO thin films
2007
We have investigated magnetic and transport properties of 5% Co-doped and undoped ZnO thin films deposited on $r$ plane ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ substrates by pulsed laser deposition. The Co doped films showed paramagnetic and ferromagnetic behavior as well as a high magnetoresistance and a small anomalous Hall effect. In a range of $0\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}5\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ at low temperatures we observed a double sign change of the magnetoresistance. For undoped ZnO films, prepared by the same conditions, only a negative MR was observed, but surprisingly also a very small anomalous Hall effect. We explain our results…
Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature
2017
We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex an…
Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3
2019
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canti…
Magnon detection using a ferroic collinear multilayer spin valve
2018
Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y3Fe5O12|CoO|Co, we find that the de…
Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
2020
A. Ross and M.K. acknowledge support from the Graduate School of Excellence Materials Science in Mainz (Grant No.DFG/GSC 266). This work was supported by the Max Planck Graduate Center with the Johannes Gutenberg-Universitat Mainz (MPGC). A. Ross, R.L., and M.K. acknowledge support from the DFG Projects No. 423441604 and No. 403502522. R.L. acknowledges the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant Agreement FAST No. 752195. All authors from Mainz also acknowledge support from both MaHoJeRo (DAAD Spintronics network, Project No. 57334897), SPIN+X (DFG SFB TRR 173, Project No. A01) and KAUST (Grant No. OSR-2019-CRG8-4048.2). D.A.G.…
Coarsening of Antiferromagnetic Domains in Multilayers: The Key Role of Magnetocrystalline Anisotropy
2002
The domain structure of an antiferromagnetic superlattice is studied. Synchrotron Mössbauer and polarized neutron reflectometric maps show micrometer-size primary domain formation as the external field decreases from saturation to remanence. A secondary domain state consisting mainly of at least 1 order of magnitude larger domains is created when a small field along the layer magnetizations induces a bulk-spin-flop transition. The domain-size distribution is reproducibly dependent on the magnetic prehistory. The condition for domain coarsening is shown to be the equilibrium of the external field energy with the anisotropy energy.
Growth mechanism and transport properties of thin La0.67Ca0.33MnO3 films
1999
Abstract We prepared thin films of La 0.67 Ca 0.33 MnO 3 on different substrates with DC sputtering. The measured transport and magnetic properties could be explained by a lattice mismatch induced by the substrate. Hall effect measurements showed a holelike charge carrier density n * h = 1.3 per unit cell below T C . The magnetoresistance results from an increase of the mobility of the charge carriers in magnetic field.
Interface properties of magnetic tunnel junctionLa0.7Sr0.3MnO3/SrTiO3superlattices studied by standing-wave excited photoemission spectroscopy
2010
The chemical and electronic-structure profiles of magnetic tunnel junction (MTJ) La0.7Sr0.3MnO3/SrTiO3 (LSMO/STO) superlattices have been quantitatively determined via soft and hard x-ray standing-wave excited photoemission, x-ray absorption and x-ray reflectivity, in conjunction with x-ray optical and core-hole multiplet theoretical modeling. Epitaxial superlattice samples consisting of 48 and 120 bilayers of LSMO and STO, each nominally four unit cells thick, and still exhibiting LSMO ferromagnetism, were studied. By varying the incidence angle around the superlattice Bragg condition, the standing wave was moved vertically through the interfaces. By comparing experiment to x-ray optical c…
Large magnetoresistance at room temperature in the off-stochiometric chalcogenide Cr0.92Te
2006
Abstract We present the electronic and magnetic properties of the transition chalcogenide Cr0.92Te. The compound is the hexagonal counterpart to the hypothetical half-metallic ferromagnet CrTe. The off-stochiometric phase crystallizes in the hexagonal NiAs-type structure P63/mmm. New magnetotransport results show a large magnetoresistance (MR) of 5.5% at room temperature in a magnetic field of 8 T. The remarkable MR-effect can be explained with spin-dependent scattering below the Curie temperature.