Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
2014
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's mag…
Heisenberg Exchange and Dzyaloshinskii–Moriya Interaction in Ultrathin Pt(W)/CoFeB Single and Multilayers
2021
We present results of the analysis of Brillouin light-scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii–Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adjacent to a W layer. Furthermore, the influence of the dipolar interaction on the dispersion relatio…
Thermodynamics of ABO3-Type Perovskite Surfaces
2011
The ABO3-type perovskite manganites, cobaltates, and ferrates (A= La, Sr, Ca; B=Mn, Co, Fe) are important functional materials which have numerous high-tech applications due to their outstanding magnetic and electrical properties, such as colossal magnetoresistance, half-metallic behavior, and composition-dependent metal-insulator transition (Coey et al., 1999; Haghiri-Gosnet & Renard, 2003). Owing to high electronic and ionic conductivities. these materials show also excellent electrochemical performance, thermal and chemical stability, as well as compatibility with widely used electrolyte based on yttrium-stabilized zirconia (YSZ). Therefore they are among the most promising materials as …
Evidence of Magnetoresistance in the Prussian Blue Lattice during a Voltammetric Scan
2008
This manuscript reports evidence of magnetoresistance effects in the Prussian Blue lattice during a voltammetric scan at room temperature. Accordingly, the PB is a well-known semiconductor that becomes surprisingly an almost metallic conductor in the presence of an internal magnetic field induced during the voltammetric scan. This offers appealing perspectives for the control of this interesting phenomenon from electrochemical techniques that could be used for the fabrication of the recent phase-change computational memories, which are electronically configurable. Herein, the PB magnetic properties have been monitored in situ by means of resonating magnetic microsensors based on the shift i…
Magnetoelectric properties of epitaxialFe3O4thin films on (011) PMN-PT piezosubstrates
2015
We determine the magnetic and magnetotransport properties of 33 nm thick ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ films epitaxially deposited by rf-magnetron sputtering on unpoled (011) ${[{\mathrm{PbMg}}_{1/3}{\mathrm{Nb}}_{2/3}{\mathrm{O}}_{3}]}_{0.68}\ensuremath{-}{[{\mathrm{PbTiO}}_{3}]}_{0.32}$ (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, strongly depend on the in-plane crystallographic direction of the epitaxial (011) ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ film and strain. When the magnetic field is applied along [100], the magnetization loops are slanted and the sign of the longitudinal MR changes from positive to negative around the Verwey transiti…
Large magnetoresistance at room temperature in the off-stochiometric chalcogenide Cr0.92Te
2006
Abstract We present the electronic and magnetic properties of the transition chalcogenide Cr0.92Te. The compound is the hexagonal counterpart to the hypothetical half-metallic ferromagnet CrTe. The off-stochiometric phase crystallizes in the hexagonal NiAs-type structure P63/mmm. New magnetotransport results show a large magnetoresistance (MR) of 5.5% at room temperature in a magnetic field of 8 T. The remarkable MR-effect can be explained with spin-dependent scattering below the Curie temperature.
Integration of GMR sensors with different technologies
2016
Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …
Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO
2021
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO…
Introduction to Spintronics
2015
Spintronics was born in 1988 with the discovery of GMR provided simultaneously by A. Fert and P. Grunberg and rewarded in 2007 with the Nobel Prize in Physics. This field has since been largely exploited on the market, for example it has been at the base of every hard disk read head. Spintronics field is extremely active and interesting from both a fundamental point of view and for technological applications. Currently, with the aim at new functionalities, there is an increased activity from materials research perspective to understand and develop spintronics devices using materials with new properties like carbon nanotubes, graphene, topological insulators and molecules. This chapter will …
Quantum size effects in a one-dimensional semimetal
2006
We study theoretically the quantum size effects in a one-dimensional semimetal by a Boltzmann transport equation. We derive analytic expressions for the electrical conductivity, Hall coefficient, magnetoresistance, and the thermoelectric power in a nanowire. The transport coefficients of semimetal oscillate as the size of the sample shrinks. Below a certain size the semimetal evolves into a semiconductor. The semimetal-semiconductor transition is discussed quantitatively. The results should make a theoretical ground for better understanding of transport phenomena in low-dimensional semimetals. They can also provide useful information while studying low-dimensional semiconductors in general.