Search results for "MINERALOGY"
showing 10 items of 1516 documents
Perovskite thin films grown by direct liquid injection MOCVD
2007
Abstract The continuous scaling down of devices dimensions, in silicon technology, imposes to replace silicon dioxide. Among the potential candidates for new capacitors, some perovskite structure materials (such as titanate or zirconate) show interesting characteristics. The first way to develop perovskite films is to use a mixture of two β-diketonates by varying the solution's cationic ratio. However, our previous results on SrZrO3 showed that a wide parametric study had to be carried on. Another way is to design novel heterometallic precursors that contain both cations on the same molecule. The ligands could be chosen so that peculiar evaporation and decomposition temperatures could be ob…
Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth
2004
The fully transient axisymmetric model has been developed for calculation of phase boundaries in large (up to 200 mm diameter) industrial floating zone (FZ) silicon single crystal growth with the needle-eye technique. The transient model is implemented in a specialized computer program. The model and program are based on a previously developed model and program for steady-state FZ process calculations. This transient approach allows studying of such substantially time-dependent process phases as the growth of the starting and ending cones of the crystal rod, which are particularly important for growth of large crystals in practice. Numerous calculations are carried out and the results for r…
Cathodoluminescence of crystalline and amorphous SiO2 and GeO2
2001
Abstract Cathodoluminescence (CL) and its temperature-dose behaviour are presented for different crystalline and amorphous modifications of SiO 2 and GeO 2 as well as for Ge-doped SiO 2 layers. The crystalline samples include four-fold coordinated Si and Ge in hexagonal quartz and quartz-like crystals, respectively, as well six-fold coordinated atoms in tetragonal rutile-like crystals. The detected luminescence bands, in general, are attributed to three optical active luminescence centres: the two-fold coordinated silicon (=Si:) and germanium (=Ge:) centre, respectively, the non-bridging oxygen hole centre (NBOHC) and the self trapped exciton (STE). The first ones, the oxygen deficient cent…
Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations
2001
When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal ge…
Dense Mosi2 produced by reactive flash sintering: Control of Mo/Si agglomerates prepared by high-energy ball milling
2011
The objective of this work is to determine the influence of the agglomeration state of the MA mixture on the microstructure and the chemical composition of SPS end-products. In order to produce MoSi2 with a microstructure and a density perfectly controlled via reactive sintering implying an SHS reaction, the characteristics of Mo/Si mechanically activated (MA) powder mixtures were investigated. Indeed, the MA powders have been characterized in terms of their surface specific area, size, phase composition and microstructure. The high-energy milling allows the formation of agglomerates (0.8 to 800 μm) composed of nanometric crystallites of molybdenum and silicon, as a consequence of a continu…
Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
2002
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…
Effect of germanium addition on the properties of reactively sputtered ZrN films
2005
For the first time, Zr-Ge-N films were deposited on silicon and steel substrates by sputtering a Zr-Ge composite target in reactive Ar-N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films' structure, internal stress, hardness and oxidation resistance were investigated. Substrate bias strongly influenced the chemical composition of the films being observed by means of a steep decrease in the Ge content for negative bias voltages higher than -80 V. In these cases, a significant hardness improvement was registered. For -100 V bias…
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Scale-up low-cost synthesis of bimodal mesoporous silicas
2005
Porous pure and doped silicas with pore sizes at two length scales (meso/macroporous) have been prepared through a large scale one-pot surfactant assisted reproducible procedure by using a simple template agent and starting from non-expensive sodium silicate as silicon source. Together with the relative low-cost of the reagents we have used, the simplicity of this method, which moreover is scalable and provides high yields, could be a strong argument for considering its suitability for the production of bimodal porous silicas. Additionally, we present a simple chemical scheme that allows directing the synthesis towards different related materials including both bimodal nanoparticulated meso…
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …