Search results for "MT"
showing 10 items of 2759 documents
Molecular-dynamics computer simulation of crystal growth and melting in Al 50 Ni 50
2008
The melting and crystallization of Al50Ni50} are studied by means of molecular dynamics computer simulations, using a potential of the embedded atom type to model the interactions between the particles. Systems in a slab geometry are simulated where the B2 phase of AlNi in the middle of an elongated simulation box is separated by two planar interfaces from the liquid phase, thereby considering the (100) crystal orientation. By determining the temperature dependence of the interface velocity, an accurate estimate of the melting temperature is provided. The value k=0.0025 m/s/K for the kinetic growth coefficient is found. This value is about two orders of magnitude smaller than that found in …
Defect-Induced Orbital Polarization and Collapse of Orbital Order in Doped Vanadium Perovskites
2018
We explore mechanisms of orbital order decay in doped Mott insulators $R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=\,$Pr,Y,La) caused by charged (Sr,Ca) defects. Our unrestricted Hartree-Fock analysis focuses on the combined effect of random, charged impurities and associated doped holes up to $x=0.5$. The study is based on a generalized multi-band Hubbard model for the relevant vanadium $t_{2g}$ electrons, and includes the long-range (i) Coulomb potentials of defects and (ii) electron-electron interactions. We show that the rotation of occupied $t_{2g}$ orbitals, induced by the electric field of defects, is a very efficient perturbation that largely controls the suppression of orbital order in these com…
Prediction of Weak Topological Insulators in Layered Semiconductors
2012
We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit-cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Though the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as…
Application of elastostatic Green function tensor technique to electrostriction in cubic, hexagonal and orthorhombic crystals
2002
The elastostatic Green function tensor approach, which was recently used to treat electrostriction in numerical simulation of domain structure formation in cubic ferroelectrics, is reviewed and extended to the crystals of hexagonal and orthorhombic symmetry. The tensorial kernels appearing in the expressions for effective nonlocal interaction of electrostrictive origin are derived explicitly and their physical meaning is illustrated on simple examples. It is argued that the bilinear coupling between the polarization gradients and elastic strain should be systematically included in the Ginzburg-Landau free energy expansion of electrostrictive materials.
Manifestation of dipole-induced disorder in self-assembly of ferroelectric and ferromagnetic nanocubes
2019
The authors thank Marjeta Maˇcek Kržmanc for many useful discussions. The financial support of M-ERA.NET Project Har-vEnPiez (Innovative nano-materials and architectures for integrated piezoelectric energy harvesting applications) is gratefully acknowledged. D.Z. acknowledges the support of the postdoctoral research program at the University of Latvia (Project No. 1.1.1.2/VIAA/1/16/072). The computing time of the LASC cluster was provided by the Institute of Solid State Physics (ISSP).
Enhanced Reflectivity Change and Phase Shift of Polarized Light: Double Parameter Multilayer Sensor
2022
Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high refractive index nonoxidizing metal multilayer thin film structures. Several multilayer sensor configurations show great sensitivity to thickness and refractive index variation of the detectable material by measuring the reflectivity ratio {\Psi} and phase shift {\Delta}. Focus is on such multilayers, which have sensitivity to both parameters ({\Psi}, {\Delta}) in the visible spectral range, thus opening the possibility for further research on a new biomedical sen…
Patterning and tuning of electrical and optical properties of graphene by laser induced two-photon oxidation
2015
Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in electronics, patterning and modification of electrical properties is very desirable since pristine graphene has no band gap. Here we demonstrate a simple all-optical patterning method for graphene, based on laser induced two-photon oxidation. By tuning the intensity of irradiation and the number of pulses the level of oxidation can be controlled to high precision and, therefore, a band gap can be introduced and electrical and optical properties can be continuously t…
Nonmagnetic and magnetic thiolate-protected Au25superatoms on Cu(111), Ag(111), and Au(111) surfaces
2012
Geometry, electronic structure, and magnetic properties of methylthiolate-stabilized Au$_{25}$L$_{18}$ and MnAu$_{24}$L$_{18}$ (L = SCH$_3$) clusters adsorbed on noble-metal (111) surfaces have been investigated by using spin-polarized density functional theory computations. The interaction between the cluster and the surface is found to be mediated by charge transfer mainly from or into the ligand monolayer. The electronic properties of the 13-atom metal core remain in all cases rather undisturbed as compared to the isolated clusters in gas phase. The Au$_{25}$L$_{18}$ cluster retains a clear HOMO - LUMO energy gap in the range of 0.7 eV to 1.0 eV depending on the surface. The ligand layer…
Ab initiolattice dynamical studies of silicon clathrate frameworks and their negative thermal expansion
2014
The thermal and lattice dynamical properties of seven silicon clathrate framework structures are investigated with ab initio density functional methods (frameworks I, II, IV, V, VII, VIII, and H). The negative thermal expansion (NTE) phenomenon is investigated by means of quasiharmonic approximation and applying it to equal time displacement correlation functions. The thermal properties of the studied clathrate frameworks, excluding the VII framework, resemble those of the crystalline silicon diamond structure. The clathrate framework VII was found to have anomalous NTE temperature range up to 300 K and it is suitable for further studies of the mechanisms of NTE. Investigation of the displa…
Strain Switching in van der Waals Heterostructures triggered by a Spin-Crossover Metal Organic Framework
2022
Van der Waals heterostructures (vdWHs) combine different layered materials with properties of interest,1 such as two-dimensional (2D) semimetals, semiconductors, magnets or superconductors. These heterostructures provide the possibility of engineering new materials with emergent functionalities that are not accessible in another way. Beyond inorganic 2D materials, layered molecular materials remain still rather unexplored, with only few examples regarding their isolation as atomically thin-layers. By a proper chemical design, the physical properties of these systems can be tuned, as illustrated by the so-called spin-crossover (SCO) compounds, in which a spin transition can be induced by app…