Search results for "Nanocrystalline material"
showing 10 items of 126 documents
Formation of anodic films on sputtering-deposited Al–Hf alloys
2009
Abstract The growth of barrier-type anodic films at high efficiency on a range of sputtering-deposited Al–Hf alloys, containing from 1 to 95 at.% Hf, has been investigated in ammonium pentaborate electrolyte. The alloys encompassed nanocrystalline and amorphous structures, the latter being produced for alloys containing from 26 to 61 at.% Hf. Except at the highest hafnium content, the films were amorphous and contained units of HfO 2 and Al 2 O 3 distributed relatively uniformly through the film thickness. Boron species were confined to outer regions of the films. The boron distributions suggest that the cation transport number decreases progressively with increasing hafnium concentration i…
Hybrid molecular materials for optoelectronic devices
2005
Hybrid molecular materials based on semiconductor nanocrystalline metal oxides are a subject of intense research for the development of optoelectronic devices. Such devices follow the strategy of combining high surface area mesoporous materials with optically and electrochemically active molecules. Photovoltaic devices, molecular sensors and biosensors are some of the examples discussed in this paper.
Formation of surface roughness on nanocrystalline aluminum samples under straining by molecular dynamics studies
2006
International audience; The surface roughening of nanocrystalline aluminum samples was investigated by molecular dynamics simulations. Attention was focused on the fact that roughness increases with the grain size and the strain. The elastic-plastic transition was found at around 3.5% strain and a reverse Hall-Petch effect was observed under straining conditions. Then, different strain distributions in grains and grain boundaries at the samples surface was highlighted, yielding to the formation of local roughness. Finally, a linear relationship between the magnitude of roughness and the out-of-plane strain component was found.
Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate
2015
Abstract For every coating it is critical that the coatings are sufficiently durable to withstand practical applications and that the films adhere well enough to the substrate. In this paper the nanotribological, nanomechanical and interfacial properties of 15–100 nm thick atomic layer deposited (ALD) TiO 2 coatings deposited at 110–300 °C were studied using a novel combination of nanoscratch and scanning nanowear testing. Thin film wear increased linearly with increasing scanning nanowear load. The film deposited at 300 °C was up to 58±11 %-points more wear-resistant compared to the films deposited at lower temperatures due to higher hardness and crystallinity of the film. Amorphous/nanocr…
Modification of Nanocrystalline WO3 with a Dicationic Perylene Bisimide: Applications to Molecular Level Solar Water Splitting
2015
[(N,N?-Bis(2-(trimethylammonium)ethylene) perylene 3,4,9,10-tetracarboxylic acid bisimide)(PF6)2] (1) was observed to spontaneously adsorb on nanocrystalline WO3 surfaces via aggregation/hydrophobic forces. Under visible irradiation (? > 435 nm), the excited state of 1 underwent oxidative quenching by electron injection (kinj > 108 s-1) to WO3, leaving a strongly positive hole (Eox ? 1.7 V vs SCE), which allows to drive demanding photo-oxidation reactions in photoelectrochemical cells (PECs). The casting of IrO2 nanoparticles (NPs), acting as water oxidation catalysts (WOCs) on the sensitized electrodes, led to a 4-fold enhancement in photoanodic current, consistent with hole transfer from …
EXAFS and XANES analysis of oxides at the nanoscale
2014
This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence.
Orthogonal Ambipolar Semiconductor Nanostructures for Complementary Logic Gates.
2016
We report orthogonal ambipolar semiconductors that exhibit hole and electron transport in perpendicular directions based on aligned films of nanocrystalline "shish-kebabs" containing poly(3-hexylthiophene) (P3HT) and N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PDI) as p- and n-type components, respectively. Polarized optical microscopy, scanning electron microscopy, and X-ray diffraction measurements reveal a high degree of in-plane alignment. Relying on the orientation of interdigitated electrodes to enable efficient charge transport from either the respective p- or n-channel materials, we demonstrate semiconductor films with high anisotropy in the sign of charge carriers. Fi…
Recent progress in high pressure X-ray absorption spectroscopy studies at the ODE beamline
2020
I.J. and A.K. are grateful to the Latvian Council of Science project no. lzp-2018/2-0353 for financial support. The research leading to these results has been partially supported by the project CALIPSOplus under the Grant Agreement No. 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020.
Compressibility and structural behavior of pure and Fe-doped SnO2 nanocrystals
2017
We have performed high-pressure synchrotron X-ray diffraction experiments on nanoparticles of pure tin dioxide (particle size ~30nm) and 10 mol % Fe-doped tin dioxide (particle size ~18nm). The structural behavior of undoped tin dioxide nanoparticles has been studied up to 32 GPa, while the Fe-doped tin dioxide nanoparticles have been studied only up to 19 GPa. We have found that both samples present at ~13 GPa a second-order structural phase transition from the ambient pressure tetragonal rutile-type structure (P42/mnm) to an orthorhombic CaCl2-type structure (space group Pnnm). No phase coexistence was observed for this transition. Additionally, pure SnO2 presents a phase transition to a …
Lattice dynamics study of nanocrystalline yttrium gallium garnet at high pressure
2014
This work reports an experimental and theoretical lattice dynamics study of nanocrystalline Y3Ga5O12 (YGG) garnet at high pressures. Raman scattering measurements in nanocrystalline Tm3+-doped YGG garnet performed up to 29 GPa have been compared to lattice dynamics ab initio calculations for bulk garnet carried out up to 89 GPa. Good agreement between the theoretical vibrational modes of bulk crystal and the experimental modes measured in the nanocrystals is found. The contribution of GaO4 tetrahedra and GaO6 octahedra to the different phonon modes of YGG is discussed on the basis of the calculated total and partial phonon density of states. Symmetries, frequencies, and pressure coefficient…