Search results for "Nanoelectronics"
showing 6 items of 36 documents
Direct Surface Relief Formation in Polymer Films
2013
Due to active development of nanoelectronics, the studies of methods of nanorelief surface formation in different materials, in particular polymers are very important. Organic polymer films in consequence of their dielectric and optical properties have been used as basis of these devices. In this paper, the possibility of UV optical record and electron beam lithography in different type of polymeric films was studied. Mechanisms of molecular structure changes: photoisomerization, destruction, cross-linking and oxidation have been discussed. The results of UV illumination of polyurethanes, polyacrylates, and some block-copolymers were described. The element analysis of polybutadiene block co…
Growth Mechanism and Surface Functionalization of Metal Chalcogenides Nanostructures
2014
Following the discovery of carbon fullerenes and nanotubes (NTs), nanostructured materials and their synthesis have attracted tremendous attention due to their superior mechanical properties, their unique electronic behavior, and their high potential in making technologically advanced nanodevices. Among different classes, layered metal chalcogenides nanostructures are of interest for a variety of applications ranging from nanoelectronics or as source materials for energy applications, nanotribology and in heterogeneous catalysis. These nanoparticles are metastable phases. Therefore, equilibrium methods are necessary to prevent the formation of the thermodynamically stable bulk phase. On the…
Self-Assembled DNA-Based Structures for Nanoelectronics
2023
Recent developments in structural DNA nanotechnology have made com-plex and spatially exactly controlled self-assembled DNA nanoarchitectureswidely accessible. The available methods enable large variety of differ-ent possible shapes combined with the possibility of using DNA structuresas templates for high-resolution patterning of nano-objects, thus openingup various opportunities for diverse nanotechnological applications. TheseDNA motifs possess enormous possibilities to be exploited in realization ofmolecular scale sensors and electronic devices, and thus, could enable fur-ther miniaturization of electronics. However, there are arguably two mainissues on making use of DNA-based electroni…
Dielectrophoresis as an assembly method for carbon nanotube memory elements
2010
The experiments described in this Master's thesis aim to assess the practicality of using dielectrophoresis (DEP) for assembling memory elements from carbon nanotubes (CNTs). These elements were field-effect transistors (FETs) with a wide hysteresis window. The devices assessed were made on a silicon substrate with a HfO2 - TiO2 - HfO2 gate dielectric layer to ensure a predictable hysteresis for memory operation. The FETs were used for further research in regard to environmental effects in their operation. An average yield of 12.5 % over 26 different trapping attempts, a total of 650 gaps, was achieved for single trapped CNTs in a two-electrode configuration with a 1 µm gap between electrod…
Metal-nanoparticle-G4-DNA conjugates and their DC conductivity measurements
2013
Due to superior self-assembly properties, DNA is a very promising candidate for the basis of future bottom-up solutions for molecular electronics and therefore the conductivity of DNA is a very crucial question. In this work DC conductivity measurements on conjugates consisting of G-quadruplex DNA and metal nanoparticles were carried out. The fabrication and results obtained from the electrical measurements of three types of conjugates (20nm G4-AgNP chains, 20nm G4-AuNP flowers and 60nm G4-AuNPs) are reported. Additionally, 20nm AuNP chains coated with G4 were fabricated but not measured electrically. Results reported here indicate that in ambient conditions G4-DNA exhibits insulating behav…
4,4'-[Thiophene-2,5-diylbis(ethyne-2,1-diyl)]dibenzonitrile
2008
In the solid state, the title compound, C(22)H(10)N(2)S, forms centrosymmetric dimers by pairs of non-classical C-H⋯S hydrogen bonds linking approximately coplanar mol-ecules. The benzene ring involved in this inter-action makes a dihedral angle of only 7.21 (16)° with the thio-phene ring, while the other benzene ring is twisted somewhat out of the plane, with a dihedral angle of 39.58 (9)°. The hydrogen-bonded dimers stack on top of each other with an inter-planar spacing of 3.44 Å. C-H⋯N hydrogen bonds link together stacks that run in approximately perpendicular directions. Each mol-ecule thus inter-acts with 12 adjacent mol-ecules, five of them approaching closer than the sum of the van …