Search results for "Opi"
showing 10 items of 14652 documents
The influence of Cr and Ni doping on the microstructure of oxygen containing diamond-like carbon films
2021
Abstract Non-hydrogenated diamond-like carbon (DLC) films doped with metals and oxygen were deposited by direct current magnetron sputtering. The influence of chromium and nickel on the surface morphology, elemental composition, bonding structure, adhesion force, optical transmittance and nanohardness of the films was characterized by atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), multi-wavelength Raman spectroscopy, UV–VIS–NIR spectrophotometry and nanoindenter. The surface roughness was reduced with the addition of Cr (7.4 at. %) or Ni (8.9 at. %) into DLC films. The EDX measurements indicated that the addition of Cr increased the oxygen content by ~37%, while …
SrTiO3-doping effect on dielectric and ferroelectric behavior of Na0.5Bi0.5 TiO3 ceramics
2018
Lead-free (Na0.5Bi0.5)1-xSrxTiO3 ceramics (x = 0–0.04) were synthesized by a conventional mixed-oxide technique. The microstructure study showed a dense structure, in good agreement with that of ab...
Preparation and dielectric properties of (Na 0.5 K 0.5 )NbO 3 ceramics with ZnO and CdO addition
2019
The sintering conditions, phase structure, and electrical properties of the ZnO and CdO doped (Na0.5K0.5)NbO3 (NKN) ceramics were investigated and discussed. All the samples were prepared by a solid state reaction method. The addition of 1 wt% CdO and ZnO as a sintering aid increases the density and lowering the sintering temperature. XRD analysis indicated perovskite structure with monoclinic symmetry. The investigated samples are good quality, the grains are well shaped without a glassy phase. The results of dielectric measurements revealed, that the dielectric properties of NKN based ceramics are stable in the wide temperature range.
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Low-temperature luminescence of CdI2 under synchrotron radiation
2020
Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.
Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs
2019
Abstract Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs was demonstrated in α- and β-TCP polymorphs prepared by wet precipitation method under identical conditions and annealed at 700 °C. Calcium phosphates with Mn doping level in the range from 1 to 5 mol% were studied and the formation of desired polymorph was controlled by varying Mn content in as-prepared precipitates. It was found that increasing Mn content resulted in the formation of β-TCP, while α-TCP was obtained with low Mn doping level, whereas a mixture of two polymorphs was obtained for intermediate Mn concentrations. Moreover, doping with Mn ions allowed the synthesis of β-TCP at …
X-ray and dielectric characterization of Co doped tetragonal BaTiO3 ceramics
2016
ABSTRACTThe crystal structure modifications of BaTiO3 induced by cobalt doping were studied. The polycrystalline (1 − x)BaTiO3 + xCo2O3 samples, with x ≤ 10 wt.%, were prepared by high temperature sintering conventional method. According to X-ray phase and structural characterization, performed by full-profile Rietveld refinement technique, all synthesized samples showed tetragonal symmetry perovskite structure with minor amount of parasitic phases. Pure single-phase composition has been detected only in the low level of doping BaTiO3. It was indicated that substitution of Co for the Ti sites in the (1 − x)BaTiO3 + xCo2O3 series led to decrease of tetragonality (c/a) of the BaTiO3 perovskit…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
Emerging blue-UV luminescence in cerium doped YAG nanocrystals
2016
Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041