Search results for "Optical"
showing 10 items of 7671 documents
Optical Plasmonic Yagi-Uda Nano-Antennas Array for Energy Harvesting Applications
2020
Optical nanoantennas have been of great interest recently due to their ability to support a highly efficient, localized surface plasmon resonance and produce significantly enhanced and highly confined electromagnetic fields. The Yagi-Uda nanoantenna, an optical analogue of the well-established radiofrequency Yagi-Uda antenna, stands out by its efficient unidirectional light emission and enhancement. In this paper, the design of an optical plasmonic Yagi-Uda nanoantenna for energy harvesting application is proposed. The enhancement of the directivity is reached by means of an organization in array. The simulation results, carried out by 3D code CST Studio, show that the proposed nanoantenna …
Time-dependent Maxwell field operators and field energy density for an atom near a conducting wall
2009
We consider the time evolution of the electric and magnetic field operators for a two-level atom, interacting with the electromagnetic field, placed near an infinite perfectly conducting wall. We solve iteratively the Heisenberg equations for the field operators and obtain the electric and magnetic energy density operators around the atom (valid for any initial state). Then we explicitly evaluate them for an initial state with the atom in its bare ground state and the field in the vacuum state. We show that the results can be physically interpreted as the superposition of the fields propagating directly from the atom and the fields reflected on the wall. Relativistic causality in the field …
A deep study of the high–energy transient sky
2021
This is an open access article. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds t…
On the repeatability of the EMI for the monitoring of bonded joints
2015
We study the feasibility and the repeatability of the electromechanical impedance (EMI) method for the health monitoring of lightweight bonded joints. The EMI technique exploits the coupling between the displacement field and the potential field of a piezoelectric material, by attaching or embedding a piezoelectric transducer to the structure to be monitored. The sensor is excited by an external voltage and the electrical admittance which is the ratio between the electric current and the applied voltage is measured as it depends on the mechanical coupling between the transducer and the host structure. Owing to this interaction, the admittance may represent a signature for the health of the …
Comparative density-functional LCAO and plane-wave calculations ofLaMnO3surfaces
2005
We compare two approaches to the atomic, electronic, and magnetic structures of LaMnO3 bulk and the (001), (110) surfaces—hybrid B3PW with optimized LCAO basis set (CRYSTAL-2003 code) and GGA-PW91 with plane-wave basis set (VASP 4.6 code). Combining our calculations with those available in the literature, we demonstrate that combination of nonlocal exchange and correlation used in hybrid functionals allows to reproduce the experimental magnetic coupling constants Jab and Jc as well as the optical gap. Surface calculations performed by both methods using slab models show that the antiferromagnetic (AF) and ferromagnetic (FM) (001) surfaces have lower surface energies than the FM (110) surfac…
Simultaneous determination of carrier lifetime and electron density-of-states in P3HT:PCBM organic solar cells under illumination by impedance spectr…
2010
We report new insights into recombination kinetics in poly(3-hexylthiophene):methanofullerene (P3HT:PCBM) bulk heterojunction (BHJ) solar cells, based on simultaneous determination of the density of states (DOS), internal recombination resistance, and carrier lifetime, at different steady states, by impedance spectroscopy. A set of measurements at open circuit under illumination was performed aiming to better understand the limitations to the photovoltage, which in this class of solar cells remains far below the theoretical limit which is the difference between the LUMO level of PCBM and the HOMO of P3HT (∼1.1 eV). Recombination kinetics follows a bimolecular law, being the recombination ti…
High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN
2012
We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to o…
Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor
2021
Delafossite CuFeO2 is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature regarding its fundamental electronic structure and transport properties. In this paper, we use a synergistic combination of resonant photoemission spectroscopy and X-ray absorption spectroscopy to directly study the electronic structure of well-defined CuFeO2 epitaxial thin films. Our detailed study reveals that CuFeO2 has an indirect and d-d forbidden band gap of 1.5 eV. The top of the valence band (VB) of CuFeO2 mainly consists of occupied Fe 3d sta…
Cathodoluminescence study of undoped GaN films: Experiment and calculation
2009
Abstract In this paper, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) on silicon substrate. The CL spectra recorded at room temperature reveal the near band-edge emission at 3.35–3.42 eV and a broad yellow luminescence at 2.2 eV. The CL depth analysis at constant power excitation shows inhomogeneous CL distribution in depth of these emissions as the electron beam increases from 3 to 25 keV. There appears a blue shift of the CL band-edge peaks with increasing sample depth. This behavior is explained by a change of the fundamental band gap due to residual strain and the local temperat…
Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high p…
2012
This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at hi…