Search results for "Optoelectronics"

showing 10 items of 2306 documents

Stimulated luminescence of AlN ceramics induced by ultraviolet radiation

2001

Abstract Properties of thermally stimulated luminescence (TL) and optically stimulated luminescence (OSL) of the ceramic material AlN-Y 2 O 3 have been studied after exposure to ultraviolet radiation (UVR). The dosemeter material Al 2 O 3 : C has been used for comparative measurements. The spectral sensitivity of the samples has been studied and compared with spectral effectiveness of the UVR-induced biological processes. It has been shown that a very high yield and linear dose response characterise the UVR-induced TL from AlN-Y 2 O 3 . Although lower than the TL, the OSL signal from UV-exposed AlN-Y 2 O 3 is still higher than that of Al 2 O 3  : C in a broad spectral region. The possibilit…

RadiationMaterials scienceOptically stimulated luminescencebusiness.industryAnalytical chemistryThermoluminescenceSpectral sensitivityvisual_artYield (chemistry)visual_art.visual_art_mediumOptoelectronicsDosimetryCeramicIrradiationbusinessLuminescenceInstrumentationRadiation Measurements
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Radiation induced luminescence processes in c-BN

2004

Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.

RadiationMaterials sciencePhotoluminescenceOptically stimulated luminescencebusiness.industryAnalytical chemistrychemistry.chemical_elementNitrideThermoluminescencechemistry.chemical_compoundchemistryBoron nitrideExcited stateOptoelectronicsbusinessLuminescenceBoronInstrumentationRadiation Measurements
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Time-resolved optical absorption in YAlO3 crystals

2004

Abstract The present work is devoted to the investigation of transient absorption (TA) induced by a pulsed electron beam (E=250 keV ) in pure and doped YAlO3 (YAP) single crystals. The nature of centers responsible for TA is discussed.

RadiationMaterials sciencebusiness.industryDopingElectronElectron beam irradiationUltrafast laser spectroscopyCathode rayComputer Science::Programming LanguagesOptoelectronicsIrradiationAtomic physicsbusinessAbsorption (electromagnetic radiation)InstrumentationRadiation Measurements
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Neutron-induced defects in optical fibers

2014

We present a study on 0.8 MeV neutron-induced defects up to fluences of 1017 n/cm2 in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.

RadiationOptical fiberMaterials scienceAbsorption spectroscopybusiness.industryConfocalDopingOptique / photoniquePhysics::OpticsSilicaNeutronlaw.inventionlawOptoelectronicsDefectsNeutronAtomic physicsbusinessLuminescenceElectron paramagnetic resonanceAbsorption (electromagnetic radiation)AIP Conference Proceedings
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Origin of the visible absorption in radiation-resistant optical fibers

2013

In this work we investigated the point defects at the origin of the degradation of radiation-tolerant optical fibers used in the visible part of the spectrum for plasma diagnostics in radiation environments. For this aim, the effects of γ -ray irradiation up to the dose of 10 MGy(SiO2) and post-irradiation thermal annealing at 550◦C were studied for a Fluorinedoped fiber. An absorption peaking around 2 eV is mainly responsible for the measured radiation-induced losses, its origin being currently debated in the literature. On the basis of the unchanging shape of this band with the radiation dose, its correlation with the 1.9 eV photoluminescent band and the thermal treatment results we assig…

RadiationOptical fiberMaterials sciencePhotoluminescencebusiness.industryAttenuationFiber optics; Radiation; Photoluminescence; AbsorptionFiber opticRadiationAbsorptionElectronic Optical and Magnetic Materialslaw.inventionlawOptoelectronicsFiberIrradiationbusinessAbsorption (electromagnetic radiation)PhotoluminescenceVisible spectrum
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Thermally and optically stimulated radiative processes in LiBaF3 crystals

2004

Abstract In LiBaF3 crystals both valence–core transitions (5.4– 6.5 eV ) and so-called self-trapped exciton luminescence (about 4.3 eV ) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF3 crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K . The spectra of thermo-stimulated luminescence (TSL) contain a broad band…

RadiationOptically stimulated luminescencebusiness.industryChemistryExcitonElectronThermoluminescenceMolecular physicsSpectral lineOptoelectronicsIrradiationbusinessLuminescenceInstrumentationRecombinationRadiation Measurements
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Luminescence processes induced by UV radiation in A1N nanotips and nanorods

2008

Abstract The processes of the UV radiation induced photoluminescence, thermoluminescence and optically stimulated luminescence in the AlN nanotips and nanorods are studied in comparison with those in the AlN ceramics. The emission spectra of the UV radiation induced luminescence processes in the AlN nanostructures are similar to those of AlN ceramics, presumably originating from recombination processes with participation of the oxygen-related centres. In the nanostructures the luminescence processes occur mainly through the excitation of the host lattice, probably due to the smaller content of the randomly distributed defects in the lattice. The observed small mutual differences in the lumi…

RadiationPhotoluminescenceMaterials scienceOptically stimulated luminescenceAluminium nitridebusiness.industryCrystal structureThermoluminescencechemistry.chemical_compoundchemistryOptoelectronicsNanorodIrradiationLuminescencebusinessInstrumentationRadiation Measurements
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Optical and magnetic resonance spectroscopy of stimulated recombination processes in defect studies

2004

Optical and magnetic resonance spectroscopy is widely used in the investigation of radiation-induced processes in wide-gap solids. This paper discusses the present understanding of applications of the experimental methods of optical and thermoactivation spectroscopy in the research of new materials, for applications in radiation dosimetry and digital imaging and in the basic research into the fundamental physics and chemistry of radiation. The advantages of the simultaneous use of optical and magnetic resonance techniques for the investigation of stimulated processes are considered.

Radiationbusiness.industryChemistryNuclear magnetic resonance spectroscopyRadiationCrystallographic defectlaw.inventionNuclear magnetic resonancelawOptoelectronicsDosimetrybusinessLuminescenceElectron paramagnetic resonanceAbsorption (electromagnetic radiation)SpectroscopyInstrumentationRadiation Measurements
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A complementary laser system for ISOLDE RILIS

2011

The Resonance Ionization Laser Ion Source (RILIS) is a powerful tool for efficient and selective production of radioactive ion beams at Isotope Separator On Line (ISOL) facilities. To avoid isobaric background, highly selective stepwise resonant ionization is applied, using up to three different laser wavelengths. Due to their advantages in terms of stability and reliability, an all solid-state titanium:sapphire (Ti:Sa) system is used or is planned to be installed at the majority of on-line facilities worldwide. Such an all solid-state Ti:Sa laser system is going to be installed at the ISOLDE RILIS at CERN alongside the well-established dye laser system.

Radioactive ion beamsHistoryDye laserbusiness.industryChemistryRadiochemistryPhysics::OpticsHighly selectiveLaserIon sourceComputer Science ApplicationsEducationlaw.inventionlawIonizationResonance ionizationSapphirePhysics::Accelerator PhysicsOptoelectronicsPhysics::Atomic PhysicsNuclear ExperimentbusinessJournal of Physics: Conference Series
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Mechanically stable metal layers for ohmic and blocking contacts on CdZnTe detectors by electroless deposition

2015

CdZnTe detectors are commonly exploited for the detection of gamma rays. However, obtaining mechanical stable, low noise contacts on CdZnTe is still an issue. In particular, ohmic contacts would be preferable for high flux applications. In this work, we show that it is possible to obtain mechanical stable gold contacts by electroless deposition in methanol solution. Moreover, we show that electroless deposited nickel contacts are also mechanical stable and are good candidates for the realization of ohmic contacts on high resistivity CdZnTe crystals.

Radiology Nuclear Medicine and ImagingMaterials scienceContactschemistry.chemical_elementElectroless depositionCrystalsMetalNickelOhmic contactAnodesInstrumentationNuclear and High Energy Physicbusiness.industryBlocking (radio)MethanolMetallurgyDetectorSettore FIS/01 - Fisica SperimentaleDetectorsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)AnodeLow noiseNickelchemistryvisual_artvisual_art.visual_art_mediumOptoelectronicsGoldbusiness
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