Search results for "PHOTOMULTIPLIER"

Preliminary radiation hardness tests of single photon Si detectors

2010

Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…

A large-area scintillating fibre detector for relativistic heavy ions

1998

Abstract A scintillating fibre detector for relativistic heavy ions with an active area of 50 × 50 cm 2 has been developed and was tested with various ion beams (1 ≤ Z ≤ 92). At count rates of up to 10 5 particles/s, the position resolution was found to be determined by the fibre width of 1 mm; depending on the nuclear charge of the beam, efficiencies between 89% and 100% and time resolutions between 800 and 200 ps (FWHM) were obtained.

Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K

2017

The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…

On the operation of silicon photomultipliers at temperatures of 1–4 kelvin

2016

Abstract SiPM operation at cryogenic temperatures fails for many common devices. A particular type from Zecotek with deep channels in the silicon substrate instead of quenching resistors was tested at liquid helium temperature. Two similar types were thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating them with low light levels. At cryogenic temperatures the SiPMs show an unchanged rise-time and a fast recovery time, practically no after-pulses, and exhibit no increased cross-talk probability. Charge collection spectra were measured to extract the pixel gain and its variation, both comparable to room temperature at the same over-voltage. The qu…

Gamma-ray position reconstruction in large lanthanum-halide crystals with SiPM readout: analytical vs. neural-network algorithms

2019

The main objective of this research was to achieve an excellent gamma-ray position reconstruction with very large monolithic scintillation crystals coupled to pixelated silicon photosensors. Analyzing the scintillation-light distribution measured along the SiPM-pixels one can get a sub-pixel accuracy for the position reconstruction. The quality of the latter depends on both the characteristics of the crystal-photosensor assembly, and the goodness of the algorithm used to reconstruct the gamma-ray hit location. We have carried out a systematic study for 511 keV gamma-rays using three different crystal thicknesses of 10 mm, 20 mm and 30 mm, all of them with planar geometry and a base size of …

Signal to Noise Ratio of Silicon Photomultipliers: a study in the Continuous Wave Regime

2014

We report on Signal to Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature …

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

2012

N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

2013

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

Measurements of Silicon Photomultipliers Responsivity

2012

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum

PPG/ECG Multisite Combo System Based on SiPM Technology

2019

Two versions of a PPG/ECG combined system have been realized and tested. In a first version a multisite system has been equipped by integrating 3 PPG optodes and 3 ECG leads, whereas in another setup a portable version has been carried out. Both versions have been realized by equipping the optical probes with SiPM detectors. SiPM technology is expected to bring relevant advantages in PPG systems and overcome the limitations of physiological information extracted by state of the art PPG, such as poor sensitivity of detectors used for backscattered light detection and motion artifacts seriously affecting the measurements repeatability and pulse waveform stability. This contribution presents t…