Search results for "Phonon"
showing 10 items of 466 documents
Photoluminescence and Raman spectroscopy of MBE‐grown InN nanocolumns
2008
InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E2h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface …
Luminescence features of nonbridging oxygen hole centres in silica probed by site-selective excitation with tunable laser
2008
Time-resolved photoluminescence at 1.9 eV associated with the nonbridging oxygen hole centre (NBOHC) in silica was investigated under excitation with a ns pulsed laser system, tunable in the visible range. Mapping of the excitation/emission pattern evidences the site-selective excitation of the resonant zero phonon line (ZPL) transition due to its weak coupling with the stretching mode of dangling oxygen. Decay of ZPL follows an exponential law with lifetime of 15.3 μs, which provides a precise measure of the electronic transition probability of a single NBOHC.
Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions
2002
5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Conformational disorder and optical properties of point defects in vitreous silica
2004
Abstract Disordered systems are characterized by the presence of local conformational heterogeneity, which reflects the complex landscape of the potential energy of the vitreous state. Optical properties of defects embedded in a vitreous matrix are also determined by the interaction with the surrounding environment; so the conformational disorder of the system induces spectral inhomogeneity. As a consequence, detailed experimental investigation of absorption and photoluminescence bands can give information on configurational substates around the chromophore. We focused our attention on B-type optical activity in silica glasses, characterized by a singlet emission and a triplet emission, conne…
Photoluminescence in ZnO:Co2+ (0.01%–5%) Nanoparticles, Nanowires, Thin Films, and Single Crystals as a Function of Pressure and Temperature: Explori…
2014
This work investigates the electronic structure and photoluminescence properties of Co2+-doped ZnO and their pressure and temperature dependences through high-resolution absorption and emission spe...
Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy
2002
Abstract We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [ d E g / d T=(4.35±0.01)×10 −4 meV / K ] and zero-temperature phonon renormalization energy ( Δ E(0)=30±1 meV ) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to re…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
2002
5 páginas, 4 figuras, 1 tabla.
Luminescence and optical spectroscopy of charge transfer processes in solid solutions Ni Mg1−O and Ni Zn1−O
2016
Abstract In this work photoluminescence spectra for Ni c Mg 1− c O and Ni x Zn 1− x O solid solutions with the rock-salt crystal structure were obtained under synchrotron radiation excitation. Periodical peaks in the photoluminescence excitation spectrum of Ni c Mg 1− c O ( c =0.008) have been discovered for a wide-gap oxide doped with 3d impurities for the first time. They can be considered as LO phonon repetitions of the narrow zero phonon line resulted from the optical transitions into the p–d charge transfer exciton [d 9 h] state. A close coincidence in energy of different peculiarities in the optical absorption and photoluminescence excitation spectra for the Ni c Mg 1− c O and Ni x Zn…