Search results for "Pulsed laser"

Superconductivity in high‐quality (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTSC thin films

2004

High-quality epitaxial (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTS thin films were successfully prepared using pulsed laser deposition (PLD) of the Re0.1Ba2CaCu2O6+δ precursor and subsequent Hg vapor annealing. The thin films exhibit a sharp superconducting transition at Tc ≈ 120 K. The resistive transitions have been investigated in magnetic fields up to 6 T parallel and perpendicular to the c-axis. We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Efficient H2 production by photocatalytic water splitting under UV or solar light over variously modified TiO2-based catalysts

2019

Abstract This paper focused for the first time on the comparison between three different approach to modify the chemico-physical properties of TiO2-based photocatalysts and their effect in the H2 production by photocatalytic water splitting both under UV and solar light irradiation, under the same experimental conditions. The application of pulsed laser irradiation to aqueous TiO2 suspensions (first approach) induced structural transformations both on the bulk and on the surface of TiO2, boosting the H2 production, under UV light irradiation, of almost three times (20.9 mmol/gcat·h) compared to bare TiO2 (7.7 mmol/gcat·h). The second strategy was based on a templating method to obtain TiO2 …

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

2020

Abstract The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high trans…

Development of niobium-based superconducting junctions

2012

This thesis presents a review of publications which mainly focuses on the fabrication and performance of Nb-based normal metal-insulator-superconductor (NIS) tunnel junctions and superconductor-normal metal-superconductor (SNS) Josephson junctions at low temperatures. The Cu/AlOx-Al/Nb based NIS double tunnel junctions were successfully fabricated using conventional electron beam lithography combined with multi-angle thermal evaporation of metals in ultra high vacuum. The subgap characteristics of these junctions showed expected temperature dependence from 0.2 K to 5 K with a good thermometry sensitivity 0.2-0.3 mV/K. Signatures of small electronic cooling effects were observed near the Nb …

A wideband THz Time Domain Spectroscopy system based on pulsed laser: model and experiments

2014

High-quality superconducting titanium nitride thin film growth using infra-red pulsed laser deposition

2018

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ~17 μΩ cm and residual resist…