Search results for "Quantum-well"

showing 2 items of 2 documents

MWP phase shifters integrated in PbS-SU8 waveguides

2015

[EN] We present new kind of microwave phase shifters (MPS) based on dispersion of PbS colloidal quantum dots (QDs) in commercially available photoresist SU8 after a ligand exchange process. Ridge PbS-SU8 waveguides are implemented by integration of the nanocomposite in a silicon platform. When these waveguides are pumped at wavelengths below the band-gap of the PbS QDs, a phase shift in an optically conveyed (at 1550 nm) microwave signal is produced. The strong light confinement produced in the ridge waveguides allows an improvement of the phase shift as compared to the case of planar structures. Moreover, a novel ridge bilayer waveguide composed by a PbS-SU8 nanocomposite and a SU8 passive…

OnesMaterials sciencePopulationPhase (waves)Physics::OpticsPolymer waveguidesSlow light7. Clean energylaw.inventionCondensed Matter::Materials ScienceOpticslawElectrònicaDispersion (optics)TEORIA DE LA SEÑAL Y COMUNICACIONESeducationMicrowavesNanomaterialseducation.field_of_studybusiness.industryÒpticaGuided wave applicationsAtomic and Molecular Physics and OpticsQuantum dotOptoelectronicsbusinessWaveguideRefractive indexMicrowaveQuantum-well -wire and -dot devices
researchProduct

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

PhotoluminescenceMaterials scienceAcoustics and UltrasonicsGallium nitrideSettore ING-INF/01 - ElettronicaVertical-cavity surface-emitting laserchemistry.chemical_compoundMOLECULAR-BEAM EPITAXYALGAN/GAN QUANTUM-WELLSIII-VDISTRIBUTED BRAGG REFLECTORSCRYSTALSURFACE-EMITTING LASERSbusiness.industryREFLECTORSHeterojunctionOPTICAL-PROPERTIESCondensed Matter PhysicsAL1-XINXN THIN-FILMSSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsDISTRIBUTED BRAGGAbsorption edgechemistryOptoelectronicsVAPOR-PHASE EPITAXYIII-V NITRIDESFIELD-EFFECT TRANSISTORSNITRIDESbusinessLiterature surveyCRYSTAL GALLIUM NITRIDELasing thresholdGALLIUM NITRIDEMolecular beam epitaxyJournal of Physics D: Applied Physics
researchProduct