Search results for "REFLECTORS"

showing 2 items of 2 documents

Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application

2016

AbstractA combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. W…

PHOTOCURRENT SPECTROSCOPY BACK REFLECTORS NANOSTRUCTURES NANOPARTICLES DESIGN ROUGH.Materials scienceSiliconchemistry.chemical_element02 engineering and technologyNANOSTRUCTURES7. Clean energy01 natural sciencesSettore ING-INF/01 - ElettronicaArticleSettore FIS/03 - Fisica Della MateriaDESIGNPHOTOCURRENT SPECTROSCOPY0103 physical sciencesNANOPARTICLESPlasmonic solar cellAbsorption (electromagnetic radiation)Plasmon010302 applied physicsPhotocurrentMultidisciplinarybusiness.industryROUGHPhotothermal therapy021001 nanoscience & nanotechnologyWavelengthchemistryAbsorptanceOptoelectronicsBACK REFLECTORS0210 nano-technologybusiness
researchProduct

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

PhotoluminescenceMaterials scienceAcoustics and UltrasonicsGallium nitrideSettore ING-INF/01 - ElettronicaVertical-cavity surface-emitting laserchemistry.chemical_compoundMOLECULAR-BEAM EPITAXYALGAN/GAN QUANTUM-WELLSIII-VDISTRIBUTED BRAGG REFLECTORSCRYSTALSURFACE-EMITTING LASERSbusiness.industryREFLECTORSHeterojunctionOPTICAL-PROPERTIESCondensed Matter PhysicsAL1-XINXN THIN-FILMSSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsDISTRIBUTED BRAGGAbsorption edgechemistryOptoelectronicsVAPOR-PHASE EPITAXYIII-V NITRIDESFIELD-EFFECT TRANSISTORSNITRIDESbusinessLiterature surveyCRYSTAL GALLIUM NITRIDELasing thresholdGALLIUM NITRIDEMolecular beam epitaxyJournal of Physics D: Applied Physics
researchProduct