Search results for "Resistivity"

Use of the linear grid array in 2D resistivity tomography

2005

Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration

2014

Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of oth…

Identifying sedimentary structures and spatial distribution of tsunami deposits with GPR - examples from Spain and Greece

2011

Shallow drilling in coastal areas like southern Spain and different parts of Greece (Corinth region and Argolis Gulf) proved evidence for tsunamis. Sedimentary analyses were conducted to identify tsunamigenic deposits, but did not reveal sedimentary structures or spatial distribution of tsunamites in a regional scale. Since drilling is time-intensive and expensive (depending on extend), this method can by far not cover an entire coastal area. On the other hand, distribution and preservation of tsunamigenic deposits seems to be highly variable. We used ground penetrating radar (GPR) in combination with electrical resistivity tomography (ERT) measurements and sedimentological research methods…

Antiferromagnetic order competing with topological state in CexBi2−xTe3

2015

The topological surface states in three-dimensional topological insulators are easily tuned by chemical doping, especially by magnetic impurities. We prepared single crystals of CexBi2−xTe3 with various x (=0.04, 0.06, 0.08, 0.10, and 0.12). The obtained crystals were characterized by X-ray diffraction and scanning electron microscopy. The magnetic susceptibility data revealed that the Ce atoms are well substituted for Bi into Bi2Te3. From the Curie-Weiss fits, we observed that the effective magnetic moments μeff are close to 2.54 μB for free Ce ion, and the paramagnetic Curie-Weiss temperatures θp are negatively increased from 2.87 K to −59.3 K with increasing x. The magnetization data cle…

Dielectric response of α-LiIO3 acid type crystals

1998

Abstract α-LiIO 3 is often used as non-linear optical material. In view of its preparation, low pH aqueous solutions are used as mother solutions, which give crystals with some hydrogen incorporated to the lattice. Thus, dielectric characterization appears as a very important tool. In this work, the dielectric properties of acid type α-LiIO 3 crystals (conductivity, permittivity, loss-angle tangent) are investigated as functions of temperature and frequency, through an original method allowing seemingly continuous measurements and avoiding space charge contributions to the measurements. The results show the dipolar and low frequency conductivity contributions to the dielectric response. The…

Electrical transport in carbon black-epoxy resin composites at different temperatures

2013

Citation: J. Appl. Phys. 114, 033707 (2013); doi: 10.1063/1.4815870 (Received 3 May 2013; accepted 27 June 2013; published online 17 July 2013) Results of broadband electric/dielectric properties of different surface area—carbon black/epoxy resin composites above the percolation threshold are reported in a wide temperature range (25–500 K). At higher temperatures (above 400 K), the electrical conductivity of composites is governed by electrical transport in polymer matrix and current carriers tunneling from carbon black clusters to polymer matrix. The activation energy of such processes decreases when the carrier concentration increases, i.e., with the increase of carbon black concentration…

Drude-type conductivity of charged sphere colloidal crystals: Density and temperature dependence

2005

We report on extensive measurements in the low-frequency limit of the ac conductivity of colloidal fluids and crystals formed from charged colloidal spheres suspended in de-ionized water. Temperature was varied in a range of 5 degrees CTheta35 degrees C and the particle number density n between 0.2 and 25 microm(-3) for the larger, respectively, 2.75 and 210 microm(-3) for the smaller of two investigated species. At fixed Theta the conductivity increased linearly with increasing n without any significant change at the fluid-solid phase boundary. At fixed n it increased with increasing Theta and the increase was more pronounced for larger n. Lacking a rigorous electrohydrodynamic treatment f…

Electrical conductivity and micro-Raman scattering studies of ionic conduction in Li1−xHxIO3 solid solutions

2002

Abstract Li 1− x H x IO 3 solid solutions have been investigated by ac electrical conductivity and micro-Raman techniques, for x ≤0.32. The presence of protons leads to a continuous reduction of the anisotropic intrinsic conduction of the system. The in-plane conduction mechanism would be by Li + vacancy hopping, while a mixed process by interstitial Li + and H + would account for the conduction along the c -axis. The solid solutions undergo the same phase transition sequence as the pure crystal, but the presence of the protons shifts the transition temperatures to lower values. Micro-Raman spectroscopy has been successfully introduced to demonstrate that proton mobility occurs preferential…

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

2014

The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associat…

Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measuremen…

1996

In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier concentration as the pressure increases is explained through the existence of a subsidiary minimum in the conduction band. This minimum shifts towards lower energies under pressure, with a pressure coefficient of about -105 meV/GPa, and its related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. The pressure value at which the electron trapping starts is shown to depend on the electron concentration at ambient pressure an…