Search results for "Semiconductor"

showing 10 items of 974 documents

Radiopurity control in the NEXT-100 double beta decay experiment

2013

An extensive material screening and selection process is underway in the construction of the "Neutrino Experiment with a Xenon TPC" (NEXT), intended to investigate neutrinoless double beta decay using a high-pressure xenon gas TPC filled with 100 kg of Xe enriched in 136Xe. Determination of the radiopurity levels of the materials is based on gamma-ray spectroscopy using ultra-low background germanium detectors at the Laboratorio Subterraneo de Canfranc (Spain) and also on Glow Discharge Mass Spectrometry. Materials to be used in the shielding, pressure vessel, electroluminescence and high voltage components and energy and tracking readout planes have been already taken into consideration. T…

PhysicsNuclear physicsXenonchemistryDouble beta decayIsotopes of xenonchemistry.chemical_elementGamma spectroscopyNeutrinoParticle detectorRadioactive decaySemiconductor detectorAIP Conference Proceedings
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Structure of N >= 126 nuclei produced in fragmentation of (238)U

2009

The nuclear structure of neutron‐rich N⩾126 nuclei have been investigated following their production via relativistic projectile fragmentation of a E/A = 1 GeV 238U beam on a Be target. The cocktail of secondary beam products were separated and identified using the GSI FRagment Separator (FRS). The nuclei of interest were implanted in a high‐granularity active stopper detector set‐up consisting of 6 double sided silicon strip detectors. The associated gamma‐ray transitions were detected with the RISING array, consisting of 15 Euroball cluster Ge‐detectors. Time‐correlated gamma decays from individually identified nuclear species have been recorded, allowing the clean identification of isome…

PhysicsNuclear reactionPhysics::Instrumentation and DetectorsAstrophysics::High Energy Astrophysical PhenomenaNuclear TheoryGamma rayParticle detectorSemiconductor detectorNuclear physicsUranium-238High Energy Physics::ExperimentGamma spectroscopyAtomic physicsNuclear ExperimentBeam (structure)Radioactive decay
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Multi-Scale Modeling of Quantum Semiconductor Devices

2006

This review is concerned with three classes of quantum semiconductor equations: Schrodinger models, Wigner models, and fluid-type models. For each of these classes, some phenomena on various time and length scales are presented and the connections between micro-scale and macro-scale models are explained. We discuss Schrodinger-Poisson systems for the simulation of quantum waveguides and illustrate the importance of using open boundary conditions. We present Wigner-based semiconductor models and sketch their mathematical analysis. In particular we discuss the Wigner-Poisson-Focker-Planck system, which is the starting point of deriving subsequently the viscous quantum hydrodynamic model. Furt…

PhysicsOpen quantum systemsymbols.namesakeSemiconductor device modelingInelastic collisionsymbolsWigner distribution functionBoundary value problemStatistical physicsSemiconductor process simulationQuantumSchrödinger's cat
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Gain Dynamics after Ultrashort Pulse Trains in Quantum Dot based Semiconductor Optical Amplifiers

2007

We study the gain dynamics in QD-based SOAs after excitation with fs-pulse trains of up to THz repetition rates. A complete ground-state gain recovery is found for 200 GHz repetition rates and injection currents around 90 mA.

PhysicsOptical amplifierbusiness.industryOptical microcavitySemiconductor laser theorylaw.inventionOpticsQuantum dot laserQuantum dotlawOptoelectronicsSemiconductor optical gainPhotonicsbusinessUltrashort pulse
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Optical Phonons in Quasi-One Dimensional Semiconductors

1993

A lagrangian formalism is systematically established for the treatment of long wavelength polar optical oscillations in quantum wires modeling the system as a macroscopic continuum. Fundamental equations for the vector displacement u and the electric potential ϕ are rigorously derived in the form of four coupled second order partial differential equations. Matching boundary conditions at the interfaces are also rigorously deduced from the fundamental equations and it is proved that no incompatibility between the mechanical and electrostatic matching boundary conditions exists. The case of AlAs-GaAs quantum wires with cylindrical symmetry is discussed.

PhysicsPartial differential equationSemiconductorClassical mechanicsPhononbusiness.industryQuantum wirePolarElectric potentialBoundary value problembusinessQuantum
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Suppression of carrier induced ferromagnetism by composition and spin fluctuations in diluted magnetic semiconductors

2001

We suggest an approach to account for spatial (composition) and thermal fluctuations in "disordered" magnetic models (e.g. Heisenberg, Ising) with given spatial dependence of magnetic spin-spin interaction. Our approach is based on introduction of fluctuating molecular field (rather than mean field) acting between the spins. The distribution function of the above field is derived self-consistently. In general case this function is not Gaussian, latter asymptotics occurs only at sufficiently large spins (magnetic ions) concentrations $n_i$. Our approach permits to derive the equation for a critical temperature $T_c$ of ferromagnetic phase transition with respect to the above fluctuations. We…

PhysicsPhase transitionCondensed Matter - Materials ScienceSpinsCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesMagnetic semiconductorDisordered Systems and Neural Networks (cond-mat.dis-nn)Condensed Matter - Disordered Systems and Neural NetworksBase (group theory)Distribution functionFerromagnetismMean field theoryCondensed Matter::Strongly Correlated ElectronsSpin-½
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Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

2008

4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).

PhysicsPhase transitionPhotoluminescenceCondensed Matter - Mesoscale and Nanoscale PhysicsStrongly Correlated Electrons (cond-mat.str-el)Condensed matter physicsQuantum wireExcitonDimension (graph theory)CondensationNanowireFOS: Physical sciencesGeneral Physics and AstronomyInAs/InP quantum wiresSpace (mathematics)Condensed Matter - Strongly Correlated ElectronsSemiconductor nanostructuresMesoscale and Nanoscale Physics (cond-mat.mes-hall)Microphotoluminiscence
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Material screening and selection for XENON100

2011

Results of the extensive radioactivity screening campaign to identify materials for the construction of XENON100 are reported. This Dark Matter search experiment is operated underground at Laboratori Nazionali del Gran Sasso (LNGS), Italy. Several ultra sensitive High Purity Germanium detectors (HPGe) have been used for gamma ray spectrometry. Mass spectrometry has been applied for a few low mass plastic samples. Detailed tables with the radioactive contaminations of all screened samples are presented, together with the implications for XENON100.

PhysicsPhysics - Instrumentation and Detectors010308 nuclear & particles physicsGamma rayLow activityFOS: Physical sciencesAstronomy and AstrophysicsInstrumentation and Detectors (physics.ins-det)Mass spectrometry01 natural sciencesSemiconductor detectorNuclear physics0103 physical sciencesMass spectrum[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]010306 general physicsGamma ray spectrometryUltra sensitive
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MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

2016

The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 \mu m. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 \mu m^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

PhysicsPhysics - Instrumentation and DetectorsPixel010308 nuclear & particles physicsbusiness.industryGaussianFOS: Physical sciencesTime resolutionInstrumentation and Detectors (physics.ins-det)Semiconductor deviceChip01 natural sciencessymbols.namesakeCMOSTest beam0103 physical sciencessymbolsOptoelectronicsddc:610010306 general physicsbusinessInstrumentationGaussian processMathematical Physics
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Physical principles of the amplification of electromagnetic radiation due to negative electron masses in a semiconductor superlattice

2015

In a superlattice placed in crossed electric and magnetic fields, under certain conditions, the inversion of electron population can appear at which the average energy of electrons is above the middle of the miniband and the effective mass of the electron is negative. This is the implementation of the negative effective mass amplifier and generator (NEMAG) in the superlattice. It can result in the amplification and generation of terahertz radiation even in the absence of negative differential conductivity.

PhysicsPhysics and Astronomy (miscellaneous)Condensed matter physicsSolid-state physicsCondensed Matter - Mesoscale and Nanoscale Physicsta114Terahertz radiationAmplifierSuperlatticesemiconductor superlatticeFOS: Physical sciencesfood and beverages02 engineering and technologyElectron021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect01 natural sciencesElectromagnetic radiation3. Good healthMagnetic fieldEffective mass (solid-state physics)0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physics0210 nano-technologyJETP Letters
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