Search results for "Semiconductor"

Lévy distributions and disorder in excitonic spectra.

2020

We study analytically the spectrum of excitons in disordered semiconductors like transition metal dichalcogenides, which are important for photovoltaic and spintronic applications. We show that ambient disorder exerts a strong influence on the exciton spectra. For example, in such a case, the wellknown degeneracy of the hydrogenic problem (related to Runge–Lenz vector conservation) is lifted so that the exciton energy starts to depend on both the principal quantum number n and orbital l. We model the disorder phenomenologically substituting the ordinary Laplacian in the corresponding Schro¨dinger equation by the fractional one with Le´vy index m, characterizing the degree of disorder. Our v…

Tight-binding calculation of spin splittings in semiconductor superlattices

1995

Promptγ-ray spectroscopy of the neutron-rich124Cd

2013

Prompt γ -ray spectroscopy of neutron-rich cadmium isotopes has been performed. The nuclei of interest have been populated via a 25-MeV, proton-induced fission of the 238 U thick target and prompt γ -rays measured using the multi-detector HPGe array JUROGAM II. New high-spin decays have been observed and placed in the level scheme using triple coincidence gates. The experimental results are compared to shell-model calculations and show good agreement.

Electric field induced hyperfine level-crossings in (nD)Cs at two-step laser excitation: experiment and theory

2005

The pure electric field level-crossing of m_F Zeeman sublevels of hyperfine F levels at two-step laser excitation was described theoretically and studied experimentally for the nD_3/2 states in Cs with n = 7,9, and 10, by applying a diode laser in the first 6S_1/2 to 6P_3/2 step and a diode or dye laser for the second 6P_3/2 to nD_3/2 step. Level-crossing resonance signals were observed in the nD_3/2 to 6P_1/2 fluorescence. A theoretical model was developed to describe quantitatively the resonance signals by correlation analysis of the optical Bloch equations in the case when an atom simultaneously interacts with two laser fields in the presence of an external dc electric field. The simulat…

Elucidating the electron transport in semiconductors via Monte Carlo simulations: An inquiry-driven learning path for engineering undergraduates

2015

Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model…

Electric conduction in semiconductors: a pedagogical model based on the Monte Carlo method

2008

We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron–hole pairs as well as for the carrier transport in moderate electric fields. The semiconductor behaviour is described by substituting the traditional statistical approach (requiring a deep mathematical background) with microscopic models, based on the Monte Carlo method, in which simple rules applied to microscopic particles and quasi-particles determine the macroscopic properties. We …

Monte Carlo Analysis of Voltage-Current Characteristic Nonlinearity and Harmonic Generation in Submicron Semiconductor Structures

2006

Using a multiparticles Monte Carlo technique, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ structures operating under very intense sub-terahertz signals from some process parameters as: i) the frequency and the intensity of the excitation signal and ii) the length of the n region

Source of Polarized Electrons for MAMI B

1991

A source of polarized electrons has been set up in order to inject polarized electrons into the 855 MeV c.w. electron accelerator MAMI B at the Mainz nuclear physics institute. It is based on photoemission of the 3/5 semiconductor GaAsP and will provide a d.c. current of 100 µA with a beam emittance of 1π mm mrad, and a polarization of about 40%.

Nonlinear Current Generation in Degenerate Semiconductors Embedded in Constant and Low-Frequency Electric Fields

2006

The explicit analytical forms of nonlinear currents in degenerate semiconductors serving as sources of coherent radiation in the wavelength millimetric and submillimetric ranges are established.

Reduced dynamical equations for solid-state lasers and VCSELs

2007

It is the aim of this presentation to show that a reduction in the number of coupled equations is feasible for spatio-temporal laser models with generic values of the pump and other parameters. Reduced equations have been derived via the application of two separate, yet equivalent, methods: one based on the CM and the other on operational calculus. The long term dynamics of the reduced models for solid-state lasers and VCSELs have been compared with that of the full systems by using both mathematical methods. Extensive numerical simulations for the complex dynamics of these and other laser models become suddenly feasible within reasonable computational time.