Search results for "Semiconductors"

showing 10 items of 181 documents

Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties

2019

Abstract Carbonyl-functionalized indenofluorene was electropolymerized with a high faradaic efficiency of 85% and the solid state properties of the resulting polymeric thin films were investigated. They displayed modular optical properties depending on their oxidation state. The approach used for inorganic semiconductors was applied to polyindeonofluorene derivative. Mott-Schottky analysis evidenced a switching from p-type to n-type electrical conduction, suggesting an ambipolar behaviour of the polymer. As an application, flexible organic memristors were fabricated and resistive switching properties were observed.

02 engineering and technology010402 general chemistry01 natural sciencesSettore ING-INF/01 - ElettronicaOrganic memristorsInorganic Chemistrychemistry.chemical_compoundOxidation stateElectrochemical polymerizationElectrical and Electronic EngineeringPhysical and Theoretical ChemistryThin filmSpectroscopychemistry.chemical_classificationAmbipolar diffusionbusiness.industryOrganic ChemistryPolymerSettore CHIM/06 - Chimica Organica021001 nanoscience & nanotechnologyIndenofluorene derivatives Electrochemical polymerization Organic semiconductors Organic memristorsAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic MaterialsOrganic semiconductorSemiconductorChemical engineeringchemistryOrganic semiconductors0210 nano-technologybusinessFaraday efficiencyDerivative (chemistry)Indenofluorene derivatives
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Solid-state mechanochemical synthesis of multinary metal halide semiconductors for optoelectronics: From powder to thin film

2020

En la última década, las perovskitas de haluro de plomo, así como otros haluros de metales múltiples, incluidas las alternativas sin plomo, han demostrado ser materiales prometedores para su uso en optoelectrónica. Por lo tanto, se buscan activamente nuevas formas de producir semiconductores de alta pureza a gran escala. Por tanto, el objetivo principal de esta tesis doctoral es el desarrollo de perovskitas y semiconductores relacionados utilizando métodos sin disolventes. Además, con la perspectiva del uso de dichos materiales en optoelectrónica a escala industrial, el foco está puesto en trabajar con materiales benignos para el desarrollo de alternativas a las perovskitas tóxicas. La sínt…

:CIENCIAS TECNOLÓGICAS [UNESCO]multinary metal halide semiconductorsoptoelectronicsthin filmUNESCO::QUÍMICAperovskitessolvent freemechanochemistryUNESCO::CIENCIAS TECNOLÓGICAS:QUÍMICA [UNESCO]single source vacuum deposition
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Creixement del MgCdO: un nou aliatge ternari d'òxids II-VI

2017

Els nous reptes tecnològics impulsen el desenvolupament de nous materials amb les propietats físiques adients per satisfer les necessitats de cada aplicació. Així, el desenvolupament de nous materials optoelectrònics ha rebut una gran atenció de la comunitat científica els últims anys. Més concretament, els compostos II-VI com els òxids de Zn, Cd i Mg o els aliatges ternaris ZnMgO i ZnCdO han sigut i estan sent àmpliament estudiats degut a les seues propietats físiques que els doten d'un gran potencial per al seu ús en dispositius optoelectrònics com díodes emissors de llum (LED per les sigles en anglès de Light-Emitting Diode) o sensors de radiació ultraviolada [Nieda2016, Wang2010, Mohant…

:FÍSICA::Física del estado sólido [UNESCO]UNESCO::FÍSICA::Física del estado sólido ::AleacionesUNESCO::FÍSICA::Física del estado sólido ::Crecimiento de cristalescreixement de cristalls:FÍSICA [UNESCO]:FÍSICA::Física del estado sólido ::Estructura cristalina [UNESCO]UNESCO::FÍSICAmicroscòpia electrònica:FÍSICA::Física del estado sólido ::Crecimiento de cristales [UNESCO]semiconductorsUNESCO::FÍSICA::Física del estado sólido ::Estructura cristalinaUNESCO::FÍSICA::Física del estado sólido:FÍSICA::Física del estado sólido ::Aleaciones [UNESCO]
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InBO3 and ScBO3 at high pressures: an ab initio study of elastic and thermodynamic properties

2016

We have theoretically investigated the elastic properties of calcite-type orthoborates ABO(3) (A= Sc and In) at high pressure by means of ab initio total-energy calculations. From the elastic stiffness coefficients, we have obtained the elastic moduli (B, G and E), Poisson's ratio (nu), B/G ratio, universal elastic anisotropy index (A(U)), Vickers hardness, and sound wave velocities for both orthoborates. Our simulations show that both borates are more resistive to volume compression than to shear deformation (B > G). Both compounds are ductile and become more ductile, with an increasing elastic anisotropy, as pressure increases. We have also calculated some thermodynamic properties, like D…

Ab initioMechanical properties02 engineering and technology01 natural scienceslaw.inventionsymbols.namesakeThermal conductivityAb initio quantum chemistry methodslaw0103 physical sciencesmedicineGeneral Materials Science010306 general physicsElastic modulusDebye modelPhysicsCondensed matter physicsStiffnessOxidesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsHigh pressureSemiconductorsFISICA APLICADAVickers hardness testsymbolsAb initio calculationsHydrostatic equilibriummedicine.symptom0210 nano-technology
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Light-induced transmission nonlinearities in gallium selenide

1999

The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures. Chantal.Ferrer@uv.es ; Jaqueline.Bouvier@uv.es ; Miguel.Andres@…

Absorption coefficientsNonlinear opticsExcitonRefractive indexGeneral Physics and AstronomyIII-VI semiconductorsGallium compounds ; III-VI semiconductors ; Nonlinear optics ; Light transmission ; Refractive index ; Excitons ; Absorption coefficients ; Carrier densitylaw.inventionOpticslaw:FÍSICA [UNESCO]TransmittancePulse (signal processing)business.industryChemistryGallium compoundsUNESCO::FÍSICANonlinear opticsLaserIntensity (physics)Attenuation coefficientLight transmissionOptoelectronicsExcitonsCarrier densitybusinessRefractive index
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The effectiveness of a novel optical probe in subgingival calculus detection

2008

:  Objectives:  The aim of the present study was to evaluate the effectiveness of a novel optical calculus detection system under in vivo conditions. Methods:  One hundred and seventy-six tooth surfaces from 44 adult teeth that were indicated for extraction were selected for the present study. The patients were randomly assigned to one of the two experimental groups. In group A (n = 96), clinical presence or absence of subgingival calculus deposits was determined using the light-emitting diode-based optical probe (OP). In group B (n = 80), the subgingival deposits were first recorded with the OP followed by root surface debridement until no subgingival deposits could be detected by the devi…

AdultMaleRoot surfaceLightmedicine.medical_treatmentDentistryTooth rootScaling and root planingStereo microscopemedicineHumansDental CalculusDentistry (miscellaneous)Diagnosis Computer-AssistedObserver Variationbusiness.industryCalculus (dental)Subgingival calculusSignal Processing Computer-AssistedMiddle Agedmedicine.diseasestomatognathic diseasesSemiconductorsDebridement (dental)FemalebusinessObserver variationInternational Journal of Dental Hygiene
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Finite-size scaling of charge carrier mobility in disordered organic semiconductors

2016

Simulations of charge transport in amorphous semiconductors are often performed in microscopically sized systems. As a result, charge carrier mobilities become system-size dependent. We propose a simple method for extrapolating a macroscopic, nondispersive mobility from the system-size dependence of a microscopic one. The method is validated against a temperature-based extrapolation [A. Lukyanov and D. Andrienko, Phys. Rev. B 82, 193202 (2010)]. In addition, we provide an analytic estimate of system sizes required to perform nondispersive charge transport simulations in systems with finite charge carrier density, derived from a truncated Gaussian distribution. This estimate is not limited t…

Amorphous semiconductorsCondensed Matter - Materials ScienceMaterials scienceStatistical Mechanics (cond-mat.stat-mech)Condensed matter physicsCharge carrier mobilityGaussianExtrapolationMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesOrganic semiconductorsymbols.namesakeLattice (order)0103 physical sciencessymbolsCharge carrier010306 general physics0210 nano-technologyScalingCondensed Matter - Statistical MechanicsPhysical Review B
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Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.

2017

A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…

Amorphous semiconductorsEngineeringSettore ING-IND/23 - Chimica Fisica Applicatabusiness.industrySchottky barrieranodic TiO2 Thin Passive Film Amorphous Semiconductor Electrochemical Impedance Spectroscopy electronic properties theory of amorphous semiconductor (a-SC) Schottky barrierElectrical engineeringOptoelectronicsElectrolytebusinessCharacterization (materials science)
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&lt;title&gt;Holographic properties of dielectric crystals and amorphous semiconductor films&lt;/title&gt;

2001

Holographic recording properties and mechanisms are analyzed and compared in dielectric electrooptic crystals (EOC), dielectric colored alkali halide crystals (AHC) and amorphous semiconductor films (ASF) basing on author's investigations as well as on the literature data. Holographic photosensitivity parameters are introduced enabling the characterization of the recording mechanism efficiency independently of the particular optical and geometrical sample parameters, and allowing also for recording optimization. Ultimate specific recording energies for EOC, AHC and ASF are theoretically estimated. It is concluded that the ultimate recording energy for both crystalline and amorphous material…

Amorphous semiconductorsMaterials sciencebusiness.industryOptical engineeringHolographyDielectricCharacterization (materials science)Amorphous solidlaw.inventionOpticslawbusinessMaterial propertiesHolographic recordingOptics of Crystals
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Correlated barrier hopping in NiO films

1991

The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.

Amorphous semiconductorsNickelMaterials scienceCondensed matter physicschemistryOver potentialElectrical resistivity and conductivitySemiconductor materialsNon-blocking I/Ochemistry.chemical_elementCharge carrierThermal conductionPhysical Review B
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