Search results for "Silicon nitride"

showing 4 items of 24 documents

Inverse dispersion design in silicon waveguides

2014

We present a numerical tool to find the cross-section geometry of silicon-oninsulator waveguides that leads to a target dispersion profile. In < 10 iterations, we achieve geometries providing ultraflattened dispersion over 350 nm bandwidth.

chemistry.chemical_compoundSilicon photonicsOpticsMaterials scienceSilicon nitridechemistrySiliconbusiness.industryBandwidth (signal processing)chemistry.chemical_elementModal dispersionInversebusiness
researchProduct

Low temperature heat capacity of phononic crystal membranes

2016

Phononic crystal (PnC) membranes are a promising solution to improve sensitivity of bolometric sensor devices operating at low temperatures. Previous work has concentrated only on tuning thermal conductance, but significant changes to the heat capacity are also expected due to the modification of the phonon modes. Here, we calculate the area-specific heat capacity for thin (37.5 - 300 nm) silicon and silicon nitride PnC membranes with cylindrical hole patterns of varying period, in the temperature range 1 - 350 mK. We compare the results to two- and three-dimensional Debye models, as the 3D Debye model is known to give an accurate estimate for the low-temperature heat capacity of a bulk sam…

heat capacityWork (thermodynamics)Materials scienceGeneral Physics and Astronomy02 engineering and technology01 natural sciencesHeat capacitysymbols.namesakechemistry.chemical_compoundThermal conductivity0103 physical scienceslämpökapasiteetti010306 general physicsDebye modelDebyephononic crystal membranesCondensed matter physicsta114Atmospheric temperature range021001 nanoscience & nanotechnologylcsh:QC1-999CrystallographyMembraneSilicon nitridechemistrysymbols0210 nano-technologylow temperatureslcsh:Physics
researchProduct

Invited Article: Ultra-broadband terahertz coherent detection via a silicon nitride-based deep sub-wavelength metallic slit

2018

We present a novel class of CMOS-compatible devices aimed to perform the solid-state-biased coherent detection of ultrashort terahertz pulses, i.e., featuring a gap-free bandwidth at least two decades-wide. Such a structure relies on a 1-µm-wide slit aperture located between two parallel aluminum pads, embedded in a 1-µm-thick layer of silicon nitride, and deposited on a quartz substrate. We show that this device can detect ultra-broadband terahertz pulses by employing unprecedented low optical probe energies of only a few tens of nanojoules. This is due to the more than one order of magnitude higher nonlinear coefficient of silicon nitride with respect to silica, the nonlinear material emp…

lcsh:Applied optics. PhotonicsMaterials scienceComputer Networks and CommunicationsTerahertz radiationTerahertz radiationPhysics::Optics02 engineering and technology7. Clean energy01 natural scienceslaw.invention010309 opticschemistry.chemical_compoundlawSolid-state devicesElectric field0103 physical sciencesBroadbandDynamic rangebusiness.industrylcsh:TA1501-1820021001 nanoscience & nanotechnologyLaserAtomic and Molecular Physics and OpticsTerahertz detectorSilicon nitridechemistryOptoelectronics0210 nano-technologybusinessOrder of magnitudeVoltageAPL Photonics
researchProduct

Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon

2019

Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investi…

lcsh:TN1-997Materials scienceatomic force microscopyelectron microscopySilicon dioxideScanning electron microscopetechnology industry and agricultureDielectricSurface finishChemical vapor depositionengineering.materialchemistry.chemical_compoundPolycrystalline siliconsilicon nitridechemistrySilicon nitrideAttenuated total reflectionengineeringsurface morphologyGeneral Materials ScienceComposite materiallcsh:Mining engineering. MetallurgyMedžiagotyra
researchProduct