Search results for "Silicon"
showing 10 items of 1391 documents
Superconducting properties of Nb thin films deposited on porous silicon templates
2008
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made of holes of 5 or 10 nm diameter and of 10 to 40 nm spacing, which provide an artificial pinning structure. The superconducting properties were investigated by transport measurements performed in the presence of magnetic field for different film thickness and substrates with different interpore spacing. Perpendicular upper critical fields measurements present peculiar features such as a change in the H_c2(T) curvature and oscillations in the field dependenc…
Electronic structure of EuO spin filter tunnel contacts directly on silicon
2011
We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintr…
Determination of organic silicon compounds in biogas from wastewater treatments plants, landfills, and co-digestion plants
2010
Abstract The study determined the organic silicon compounds in biogases from landfills, wastewater treatment plants (WWTPs), and biogas plants processing different organic material. The aim was to provide information for gas utilisation applications, as siloxanes are reported to shorten the life time of engines when biogas is used for energy production. In total, 48 samples were measured. The total concentration of organic silicon compounds in landfill and WWTP gases varied from 77 to 2460 μg/m3 while the concentrations in biogases from biogas plants varied from 24 to 820 μg/m3. The total concentration of organic silicon compounds was lowest (24 μg/m3) in the biogas plant processing grass a…
Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils
2018
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5–2.2 Å cycle −1 in the temperature range of 80–350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin mul…
Assessment of protection treatments for carbonatic stone using nanocomposite coatings
2020
In this paper the effect of the application of four kinds of polymer dispersions containing nanoparticles, used as protectives, on two type of carbonatic lithotypes, White Noto and Comiso stone, is reported. The study was conducted by analysing the contribution of each component of the system. After the structural characterization of the coating itself, the performance of those colloidal systems has been studied upon application on the calcarenites, preferring non-invasive techniques and microdestructive techniques. Effect of the nanoparticles presence on hydrorepellency and roughness of the stone surface and on chromatic changes has also been considered. The tests conducted have proven tha…
Properties of silicon integrated photonic lenses: bandwidth, chromatic aberration, and polarization dependence
2013
We analyze the properties of silicon integrated photonic lenses based on scattering optical elements. The devices have been inverse- designed by combining genetic algorithms and the multiple scattering theory. These lenses are able to focus an infrared plane wave front on a position freely determined during the design stage. The nanofabricated silicon integrated lenses have proved effective over a large range of wave- lengths, measured to be of the order of 100 nm. The lenses show chromatic aberration, with a displacement of the position of the focus mea- sured to be higher than 1.5 μm when the wavelength varies from 1500 to 1600 nm. Moreover, we analyze the polarization of the focused beam…
Broadband telecom to mid-infrared supercontinuum generation in a dispersion-engineered silicon germanium waveguide.
2015
We demonstrate broadband supercontinuum generation (SCG) in a dispersion-engineered silicon-germanium waveguide. The 3 cm long waveguide is pumped by femtosecond pulses at 2.4 μm, and the generated supercontinuum extends from 1.45 to 2.79 μm (at the −30 dB point). The broadening is mainly driven by the generation of a dispersive wave in the 1.5–1.8 μm region and soliton fission. The SCG was modeled numerically, and excellent agreement with the experimental results was obtained.
300°C SiC Blocking Diodes for Solar Array Strings
2009
Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…
Metallic subnanometer porous silicon: A theoretical prediction
2021
In the present work, T-Si, a silicon-based counterpart of T-carbon, has been designed with the aid of density functional theory (DFT) calculations. Its stability has been fully confirmed from energetic, mechanical, lattice dynamic, and thermodynamic aspects. Due to the space extrusion, the delocalized electrons on the ${\mathrm{Si}}_{4}$ tetrahedrons are squeezed onto the inter-tetrahedron $\mathrm{Si}\ensuremath{-}\mathrm{Si}$ bonds, which therefore leads T-Si to be metallic. Furthermore, the electronic conductivity of this new material has also been predicted and discussed in this work. This new silicon allotrope with a low density of $0.869\mathrm{g}/{\mathrm{cm}}^{3}$ can even floats on…
Temperature Coefficients of Compensated Silicon Solar Cells – Influence of Ingot Position and Blend-in-ratio
2015
Published version of an article in the journal: Energy Procedia. Also available on Science Direct: http://dx.doi.org/10.1016/j.egypro.2015.07.004 Solar-grade silicon made from a metallurgical route presents boron and phosphorus compensation. Earlier work has shown that cells made from such material produce more energy than reference polysilicon modules when the temperature and irradiance is high. In the present study, solar cells from two different ingots with different blend-in-ratios were made from wafers at varying ingot heights in order to investigate how the temperature coefficients vary with compensation level and ingot height. The results suggest that solar modules made with solar ce…