Search results for "Solid"
showing 10 items of 3575 documents
Synthesis and structural study of NaTi2(PO4)3-NaSn2(PO4)3 solid solutions. I. The effect of composition on lattice parameters
1992
Abstract Compounds NaM2IV(PO4)3 with NZP-type structure present a different behavior depending on the nature of MIV. For MIV = Ti and Zr the structure shows the space group R3c, whereas for MIV = Sn the space group is R3. Differences in behavior of NaTi2(PO4)3 - NaSn2(PO4)3 solid solutions are discussed in relation to the composition. The variation of the lattice parameters with composition in NaTi2−xSnx(PO4)3 (0 1. The structure of the compound with x = 1 (NaSnTi(PO4)3) has been determined applying the Rietveld method to deconvolute the powder x-ray diffraction profile.
A comparative study of heterostructured CuO/CuWO4 nanowires and thin films
2017
Authors are grateful to Reinis Ignatans for XRD measurements.
Holographic recording optimization in amorphous As-Se-S films
2003
The holographic recording parameters of amorphous chalcogenide semiconductor (AChS) thin films under optimization depend on hologram type. So, using self-enhancement effect during recording and wet etching after recording enable possibility to decrease recording energy and increase of signal/noise ratio for embossed holograms. Choosing the appropriate light exposure permit us to achieve equal values of diffraction efficiency (DE) for different diffraction orders during fabrication of light splitting holographic optical elements (HOE). Changing film thickness and recording wavelength it is possible to find optimal conditions for high DE holographic gratings readable at infrared region of lig…
SPS-assisted preparation of the Magnéli phase WO2.90 for thermoelectric applications
2013
We describe the preparation and simultaneous consolidation of WO2.90 by spark plasma sintering (SPS). SPS allows for the direct manufacturing of large amounts of consolidated material. Synchrotron powder X-ray diffraction indicates that the material is single phase. Microstructure analysis indicates that the pellet is fully dense, allowing high-temperature thermoelectric properties to be reliably measured. The as-prepared samples of WO2.90 reach a ZT of 0.1 at 1100 K.
Structure of amorphousGe8Sb2Te11:GeTe-Sb2Te3alloys and optical storage
2009
The amorphous structure of ${\text{Ge}}_{8}{\text{Sb}}_{2}{\text{Te}}_{11}$, an alloy used in the Blu-ray Disc, the de facto successor to digital versatile disk (DVD) optical storage, has been characterized by large-scale (630 atoms, 0.4 ns) density-functional/molecular-dynamics simulations using the new PBEsol approximation for the exchange-correlation energy functional. The geometry and electronic structure agree well with available x-ray diffraction data and photoelectron measurements. The total coordination numbers are Ge: 4.0, Sb: 3.7, and Te: 2.9, and the Ge-Ge partial coordination number is 0.7. Most atoms (particularly Sb) prefer octahedral coordination but 42% of Ge atoms are ``tet…
The Effects of Thermo-Baric Synthesis on the Structure and Properties of the Ferroelectric Li0.125Na0.875NbO3Solid Solution
2014
ABSTRACTResults of X-ray diffraction, dielectric, and Raman studies of the ferroelectric Li0.125Na0.875NbO3 solid solution obtained under hot-pressing conditions (6 GPa, 1400 and 1800 K) are compared with those of the same compound synthesized by conventional ceramics technology. The thermo-barometric synthesis is found to improve the ordering of cations and to increase the value of dielectric permittivity and ion conductivity of the ceramics.
<title>Sub-bandgap light hologram recording in amorphous chalcogenides</title>
2006
Sub-bandgap light recording (SBLR) of holograms is studied basing on the experiments in a-As2S3 films and literature data. Holographic grating recording with focused (light intensity I = 14 - 124 W/cm2 ) and unfocused (I = 0.50 - 0.78 W/cm2) 632.8 nm He-Ne laser sub-bandgap light in non-annealed and annealed a-As2S3 films has been experimentally studied. The focused light recording is found to be much more efficient (diffraction efficiency up to 14.9%, specific recording energy down to 216 J/(cm2%)) than the unfocused light recording (0.11%, 72400 J/(cm2%)). Some other properties are also different. The focused light recording is explained by the photothermally stimulated relaxational struc…
Time-resolved XRD experiments for a fine description of mechanisms induced during reactive sintering
2005
The control of Mechanically Activated Field Activated Pressure Assisted Synthesis hereafter called the MAFAPAS process is the main objective to be achieved for producing nanostructure materials with a controlled consolidation level. Consequently, it was essential to develop characterization tools "in situ" such as the Time Resolved X-ray Diffraction (TRXRD), with an X-ray synchrotron beam (H10, LURE Orsay) coupled to an infrared thermography to study simultaneously structural transformations and thermal evolutions. From the 2003 experiments, we took the opportunity to modify the sample-holder in order to reproduce the better synthesis conditions of the MAFAPAS process, but without the conso…
Characterization of Dielectric Anomaly in Solid Solution Based on BaTiO3
2011
The influence of Zr doping on a structure and dielectric properties of Ba0.8Sr0.2TiO3 were studied. For this purpose Ba0.8Sr0.2Ti0.75Zr0.25O3 ceramics were obtained by a conventional method and were determined by an X-ray diffraction (XRD) and scanning electron microscopy (SEM) for crystallographic, surface morphological and compositional studies. The temperature and frequency dependence of dielectric permittivity were studied in the temperature range from 150 to 500 K and the frequency between 20 Hz and 1000000 Hz. The thermal behavior of the Ba0.8Sr0.2Ti0.75Zr0.25O3 ceramics were also studied using Differential Scanning Calorimetry. A diffusivity coefficient γ was calculated.
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…