Search results for "Spintronics"
showing 10 items of 231 documents
Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories
2015
Abstract The recent discovery that magnetic domain walls can be moved under a small current without any magnetic field opens a perspective for a paradigm shift in mass storage design. However, several fundamental questions must be answered before the technology can be considered feasible. This review covers the current understanding of domain wall (DW) propagation in CoFeB–MgO structures with perpendicular magnetic anisotropy. These films exhibit a very low density of pinning centers and can be integrated in Magnetic Tunnel Junctions, making them very promising for manipulating multiple domain walls in ultra-high-density spintronic devices. Several important issues are addressed: the physic…
Spintronic properties of Li1.5Mn0.5Z (Z=As, Sb) compounds in the Cu2Sb structure
2015
Abstract We have investigated the spintronic properties of two formula units of Li1.5Mn0.5Z (Z=As, Sb), in the Cu2Sb tetragonal crystal structure based on first-principles density-functional theory calculations, at, and near, their equilibrium (minimum total energy) lattice constants. Two groups of configurations, A and B, are formed for each type of alloy by interchanging Mn with each Li located at four different positions with respect to Li4Z2. Mn has four nearest neighbors in group-A and has one nearest neighbor in group-B. The bonding features of the alloys are compared to the ionic bonding in Li4Z2, and the tetragonal structure of cubic LiMnZ. The magnetic moments of these compounds ar…
Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces
2015
Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of …
Molecular magnetism: from chemical design to spin control in molecules, materials and devices
2019
The field of molecular magnetism is rapidly evolving towards the use of magnetic molecules and molecule-based magnetic materials in physics-driven and nanotechnology-driven fields, in particular molecular spintronics, quantum technologies, metal–organic frameworks (MOFs) and 2D materials. In molecular spintronics, the goal is the development of a new generation of spintronic devices based on molecular materials or, in the longer term, on one or a few molecules. In the area of quantum technologies, the milestones reached in the design of molecular spin qubits with long quantum coherence times and in the implementation of quantum operations have raised expectations for the use of molecular sp…
Revival of Heusler compounds for spintronics
2014
Dynamics of the incorporation of Co into the wurtzite ZnO matrix and its magnetic properties
2015
Made available in DSpace on 2022-04-29T07:25:55Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-07-25 Financiadora de Estudos e Projetos Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Abstract Bulk Co-doped ZnO (Zn1-xCoxO) samples were prepared and studied with particular emphasis on their compositions, structures, and magnetic properties. A detailed microstructural analysis was conducted to investigate the nature of Co incorporation into the wurtzite ZnO matrix. The Zn1-xCoxO ceramic samples were prepared using the standard solid-state reaction method with different Co molar concentrations of u…
Heusler Compounds: Applications in Spintronics
2016
Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy
2011
We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich ${\mathrm{Eu}}_{1}{\mathrm{O}}_{1+x}$ thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of $4f$ valence band and $3d$ core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si $2p$ core-level photoemission. This work…
Smart molecular/MoS2 Heterostructures Featuring Light and Thermally-Induced Strain Driven by Spin Switching
2020
In this work we exploit the ability of spin-crossover molecules to switch between two spin states, upon the application of external stimuli, to prepare smart molecular/2D heterostructures. Through the chemical design of the hybrid interface, that involves a covalent grafting between the two components, we obtain a hybrid heterostructure formed by spin-crossover nanoparticles anchored on chemically functionalized monolayers of semiconducting MoS2. In the resulting hybrid, the strain generated by the molecular system over the MoS2 layer, as a consequence of a thermal or light-induced spin switching, results in a dramatic and reversible change of its electrical and optical properties. This nov…
Generation of broadband THz transients via metallic spintronic emitters driven by 20-fs pulses at 1030 nm
2020
We explore power and bandwidth scaling for the generation of highly-temporally-confined THz transients from spintronic emitters, driven by the 250-fs and 20-fs pulses of a high-power 28-MHz Yb-based laser, spectrally centered at 1030 nm.