Search results for "Spintronics"
showing 10 items of 231 documents
Gradual phase transition from ferromagnetic tetragonal to antiferromagnetic cubic states in Mn Ga (1.80 ≤ x ≤ 3.03) thin films
2019
Abstract The structural, magnetic, and electronic properties of MnxGa thin films are investigated as varying the Mn composition (1.80 ≤ x ≤ 3.03). The variation of x in MnxGa films dramatically changes the crystal structure as well as the magnetic properties. With increasing x, we observe the gradual phase transition from a ferromagnetic tetragonal state to an antiferromagnetic cubic state. The structural characterization reveals that the D022 tetragonal structure of Mn2Ga is slowly transformed to the L12 cubic structure of Mn3Ga. Two phases coexist around x = 2.4. The magnetization is systematically reduced as x increases, ending to an antiferromagnetic state of cubic Mn3Ga, and the electr…
Self-assembled monolayers based spintronics: from ferromagnetic surface functionalization to spin-dependent transport.
2016
Chemically functionalized surfaces are studied for a wide range of applications going from medicine to electronics. Whereas non-magnetic surfaces have been widely studied, functionalization of magnetic surfaces is much less common and has almost never been used for spintronics applications. In this article we present the functionalization of La2/3Sr1/3MnO3, a ferromagnetic oxide, with self-assembled monolayers for spintronics. La2/3Sr1/3MnO3 is the prototypical half-metallic manganite used in spintronics studies. First, we show that La2/3Sr1/3MnO3 can be functionalized by alkylphosphonic acid molecules. We then emphasize the use of these functionalized surfaces in spintronics devices such a…
Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors
2013
Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electro…
Advances in Semiconductor Research: Physics of Nanosystems, Spintronics and Technological Applications
2014
Linear and nonlinear spin dynamics in multi-domain magnetoelastic antiferromagnets
2021
Antiferromagnets have recently surged as the prominent material platform for the next generation spintronics devices. Despite the remarkable abundance of antiferromagnets and the variety of their spin textures in nature, they share a widely common, if not ubiquitous, feature. Magnetoelasticity, which is expressed as strictions of different origin, relativistic and/or exchange, significantly contributes to the magnetic anisotropy of antiferromagnets. Crucially, a general theoretical framework able to address the role of domain walls on the spin dynamics in antiferromagnets in the presence of magnetoelasticity is lacking. Here we tackle this problem developing a very general macroscopic pheno…
Skyrmion Dynamics – from thermal diffusion to ultra-fast motion
2018
Summary form only given. Spintronics promises to be a paradigm shift from using the charge degree of freedom to using the spin degree of freedom. To this end three key requirements are: (i) stable spin structures for long term data retention; (ii) efficient spin manipulation for low power devices and (iii) ideally no susceptibility to stray fields as realized for antiferromagnets. We explore different materials classes to tackle these challenges and explore the science necessary for a disruptive new technology. To obtain ultimate stability, topological spin structures that emerge due to the Dzyaloshinskii-Moriya interaction (DMI), such as chiral domain walls and skyrmions are used. These po…
Magnon transport in the presence of antisymmetric exchange in a weak antiferromagnet
2021
The Dzyaloshinskii-Moriya interaction (DMI) is at the heart of many modern developments in the research field of spintronics. DMI is known to generate noncollinear magnetic textures, and can take two forms in antiferromagnets: homogeneous or inter-sublattice, leading to small, canted moments and inhomogeneous or intra-sublattice, leading to formation of chiral structures. In this work, we first determine the strength of the effective field created by the DMI, using SQUID based magnetometry and transport measurements, in thin films of the antiferromagnetic iron oxide hematite, $\alpha$-Fe$_2$O$_3$. We demonstrate that DMI additionally introduces reconfigurability in the long distance magnon …
Concepts of antiferromagnetic spintronics
2017
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered new concepts is the N\'{e}el spin-orbit torque which allows for the antiferromagnetic order parameter to be controlled by an electrical current in common microelectronic circuits. In this review we discuss the utility of antiferromagnets as active and supporting materials for spintronics, the interplay of antiferromagnetic spintronics with other modern research fields in condensed matter physics, and its utility in future "More than Moore" information tech…
Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures
2017
We investigate the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by ${90}^{\ensuremath{\circ}}$ and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magne…
Manipulating antiferromagnets with magnetic fields: Ratchet motion of multiple domain walls induced by asymmetric field pulses
2016
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic …