Search results for "Stacking fault"

showing 3 items of 13 documents

Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1 −xMgxO multiple quantum wells grown on LiGaO2 substrate

2020

Ministry of Science and Technology, Taiwan (104-2221-E-110-012-MY3, 107-2221-E-110-004-MY3); National Natural Science Foundation of China (51602309, U1605245).

PhotoluminescenceMaterials scienceCondensed matter physicsbusiness.industry02 engineering and technology021001 nanoscience & nanotechnologyPolarization (waves)01 natural sciences7. Clean energyAtomic and Molecular Physics and Optics010309 opticsCondensed Matter::Materials ScienceOptics0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Degree of polarization0210 nano-technologybusinessLuminescenceAnisotropyElectronic band structureQuantum wellStacking fault
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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000

Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…

PhotoluminescenceMaterials scienceIII-V semiconductorsScanning electron microscopeAnalytical chemistryGeneral Physics and AstronomySemiconductor thin filmsChemical vapor depositionStacking faultsSurface topographysymbols.namesake:FÍSICA [UNESCO]MagnesiumGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Magnesium ; Semiconductor thin films ; MOCVD coatings ; Scanning electron microscopy ; Raman spectra ; Photoluminescence ; Surface composition ; Surface topography ; Stacking faults ; Inclusions ; ExcitonsPhotoluminescenceWurtzite crystal structureDopingUNESCO::FÍSICAGallium compoundsWide band gap semiconductorsMOCVD coatingsSurface compositionInclusionssymbolsSapphireExcitonsRaman spectraRaman spectroscopyScanning electron microscopyStacking fault
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A real-space approach to the analysis of stacking faults in close-packed metals: Modelling and Q-space feedback Longo Alessandro

2020

An R-space approach to the simulation and fitting of a structural model to the experimental pair distribution function is described, to investigate the structural disorder (distance distribution and stacking faults) in close-packed metals. This is carried out by transferring the Debye function analysis into R space and simulating the low-angle and high-angle truncation for the evaluation of the relevant Fourier transform. The strengths and weaknesses of the R-space approach with respect to the usual Q-space approach are discussed.

close-packed metalstacking faultcobalt.pair distribution functioncobaltDebye function analysi
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