Search results for "Superlattice"

showing 3 items of 83 documents

Second harmonic generation in self-assembled alternating multilayers of hemicyanine containing polymers and polyvinylamine

1995

Abstract Assembly of noncentrosymmetric multilayers is a facile technique for preparing noncentrosymmetric films avoiding electrical poling procedures and problems from subsequent relaxation of the induced orientational order. A maximum Xzzz of 13 × 10−9 esu was achieved for the assembly of up to six layers. Current problems are the long-term hydrolysation of the hemicyanine nonlinear optical chromophores and the reduction of polar orientation with increasing layer thickness.

chemistry.chemical_classificationMaterials scienceNanostructurebusiness.industrySuperlatticePolingRelaxation (NMR)Metals and AlloysAnalytical chemistrySecond-harmonic generationSurfaces and InterfacesPolymerChromophoreSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMaterials ChemistryOptoelectronicsPolarbusinessThin Solid Films
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Metal nanoparticle/polymer superlattice films: Fabrication and control of layer structure

1997

chemistry.chemical_classificationNanostructureFabricationMaterials scienceMechanical EngineeringSuperlatticeNanoparticleNanotechnologyPolymerMetalchemistryMechanics of Materialsvisual_artvisual_art.visual_art_mediumGeneral Materials ScienceSelf-assemblyLayer (electronics)Advanced Materials
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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

2019

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously shown to dramatically improve internal quantum efficiency of near-UV LEDs, via a decrease in the density of deep traps responsible for nonradiative recombination in the QW region. The main differences between samples with and without UL were (a) a higher compensation of Mg acceptors in the p-GaN:Mg contact layer of the sample without UL, which correlates with the presence of traps with an activation energy of 0.06 eV in the QW region, (b) the…

electronMaterials scienceSuperlatticeGeneral Physics and Astronomy02 engineering and technologyElectronElectroluminescenceSettore ING-INF/01 - Elettronica01 natural sciencesganSettore FIS/03 - Fisica Della Materialaw.inventionlaw0103 physical sciencesIrradiationQuantum wellDiode010302 applied physicsbusiness.industry021001 nanoscience & nanotechnologyefficiencyInAlN underlayer effects Deep traps InGaN/GaN single quantum well light-emitting diodesOptoelectronicsQuantum efficiency0210 nano-technologybusinessLight-emitting diodeJournal of Applied Physics
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