Search results for "Surfaces and interfaces"
showing 10 items of 939 documents
Tribological properties of thin films made by atomic layer deposition sliding against silicon
2018
Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…
Micelles in Mixtures of Sodium Dodecyl Sulfate and a Bolaform Surfactant
2006
Mixtures composed of water, sodium dodecyl sulfate (SDS), and a bolaform surfactant with two aza-crown ethers as polar headgroups (termed Bola C-16) were investigated by modulating the mole ratios between the components. The two surfactants have ionic and nonionic, but ionizable, headgroups, respectively. The ionization is due to the complexation of alkali ions by the aza-crown ether unit(s). Structural, thermodynamic, and transport properties of the above mixtures were investigated. Results from surface tension, translational self-diffusion, and small angle neutron scattering ( SANS) are reported and discussed. Interactions between the two surfactants to form mixed micelles result in a com…
Excitation Transfer Engineering in Ce-Doped Oxide Crystalline Scintillators by Codoping with Alkali-Earth Ions
2018
This work has been supported by the European Social Fund Measure No. 09.3.3-LMT-K-712 activity Improvement of Researchers Qualification by Implementing the World-Class R&D Projects, and by grant #14.W03.31.0004 of the Russian Federation Government. Authors are grateful to CERN Crystal Clear Collaboration and COST Action TD1401 "Fast Advanced Scintillator Timing (FAST)" for support of collaboration.
Preparation of Nd:YAG Nanopowder in a Confined Environment
2007
Nanopowder of yttrium aluminum garnet (YAG, Y3Al5O12) doped with neodymium ions (Nd:YAG) was prepared in the water/cetyltrimethylammonium bromide/1-butanol/n-heptane system. Aluminum, yttrium, and neodymium nitrates were used as starting materials, and ammonia was used as a precipitating agent. Coprecipitate hydroxide precursors where thermally treated at 900 degrees C to achieve the garnet phase. The starting system with and without reactants was characterized by means of the small-angle neutron scattering technique. The system, without reactants, is constituted by a bicontinuous structure laying near the borderline with the lamellar phase region. The introduction of nitrates stabilizes th…
Study of Intumescent Coatings Growth for Fire Retardant Systems in Naval Applications: Experimental Test and Mathematical Model
2022
Onboard ships, fire is one of the most dangerous events that can occur. For both military and commercial ships, fire risks are the most worrying; for this reason they have an important impact on the design of the vessel. The intumescent coatings react when heated or in contact with a living flame, and a multi-layered insulating structure grows up, protecting the underlying structure. In this concern, the aim of the paper is to evaluate the intumescent capacity of different composite coatings coupling synergistically modeling and experimental tests. In particular, the experiments have been carried out on a new paint formulation, developed by Colorificio Atria S.r.l., in which the active comp…
Optical Absorption of Excimer Laser‐Induced Dichlorine Monoxide in Silica Glass and Excitation of Singlet Oxygen Luminescence by Energy Transfer from…
2021
An optical absorption (OA) band of interstitial dichlorine monoxide molecules with peak at 4.7 eV and halfwidth 0.94 eV is identified in F2 laser - irradiated (photon energy=7.9 eV) synthetic silica glass bearing both interstitial O2 and Cl2 molecules. Alongside with intrinsic defects, this OA band can contribute to solarization of silica glasses produced from SiCl4. While the formation of ClClO is confirmed by its Raman signature, its structural isomer ClOCl may also contribute to this induced OA band. Thermal destruction of this band between 300C and 400C almost completely restores the pre-irradiation concentration of interstitial Cl2. An additional weak OA band at 3.5 eV is tentatively a…
Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers
2021
The X-ray radiation-induced attenuation (RIA) growth kinetics are studied online in different single-mode aluminosilicate optical fibers in the near-IR (NIR) domain to evaluate their potential in terms of dosimetry. The optical fibers differ by Al contents, core sizes, drawing parameters, and also by a preform deposition process. The data show no dependence of the RIA on all these parameters, a positive result for the design of point or distributed radiation detectors exploiting RIA to monitor the dose. The RIA growth rate is unchanged for dose rates changing from 0.073 to 6.25 Gy(SiO2) s−1, and the RIA linearly increases with the dose up to 2 kGy(SiO2). Small but noticeable RIA changes are…
Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition
2021
Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
2018
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…