Search results for "TRANSMISSION ELECTRON"

Dislocations in AIIIBVI single crystals

1988

High densities of planar defects are evidenced in various AIIIBVI layer compounds by systematic electron microscopy observations with the dark-field weak-beam image technique. Several samples are analyzed, as obtained from different crystal ingots of InSe grown by the Bridgman-Stockbarger method, and some GaS and GaSe single crystals grown both, from the melt and from the vapour. The observed defects are identified mainly as screw and edge dislocations, the orientation of which is obtained in some cases by the analysis of the Moire fringes. Dislocation densities ranging between 108 and 1010 cm−2 are measured, not uniformly distributed in the various regions of each sample. Finally, the obse…

Radiation damage in zircon

2003

A single, zoned, Sri Lankan zircon exhibits a range of microstructures from crystalline to nearly amorphous that are the result of radiation damage over a dose range of 2.1–10.1·1015 α-decay events/mg (0.16–0.47 dpa). The zones in the crystal were examined at a variety of length scales using optical microscopy, micro-Raman spectroscopy, electron microprobe analysis, and transmission electron microscopy. Birefringence varies linearly with dose: birefringence = −4.71·10−18 /g· D α + 4.86·10−2. Full width at half maximum (FWHM) measurements of the B1g(ν3) peak, as determined by micro-Raman spectroscopy, were used to estimate the extent of radiation damage in each zone. The radiation dose (calc…

Microstructural evolution of mullites produced from single-phase gels

2007

The crystalline microstructure of mullites obtained by heating monophasic gels has been investigated. Gels with alumina to silica molar ratio of 3:2 (as in secondary mullite) and 2:1 (as in primary mullite) were prepared by gelling mixtures of aluminium nitrate and tetraethylorthosilicate. Phase transformations were induced by heating the gel precursors, with different final treatment temperatures between 1173 and 1873 K. The mullites formed as a result of thermal treatment were studied by means of X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The crystalline structure (unit-cell parameters) and microstructure were determined from X-ray diffraction pa…

Growth and defect studies of CdTe particles

2013

The paper reports the epitaxial growth of cadmium telluride (CdTe) particles by thermal deposition on cleaved planes of (001)NaCl and (001)KBr. Using high resolution transmission electron microscopy and electron diffraction it was shown that CdTe particles could have different orientation and phase (cubic or hexagonal) depending on the substrate temperature. Their most common defects are twins and stacking faults.

Light and electron microscopy study of D2-40 expression on lymphatics

2008

Structure and Deformations of Pd−Ni Core−Shell Nanoparticles

2005

International audience; Homogeneous collections of Pd−Ni core−shell nanoparticles have been prepared by decomposition of metal−organic compounds and studied by several electron microscopy techniques: transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), high-resolution transmission electron microscopy (HRTEM), energy-filtered microscopy (EFTEM), and by X-ray photoelectron spectroscopy (XPS). The physical and chemical properties of the Pd shell are supposed to depend on its electronic properties, which are influenced by the presence of the Ni core and by the deformation in the Pd lattice. Here, the interfacial structure of Pd/Ni and the lattice deformations in t…

Unconventional Fluorescence Quenching in Naphthalimide-Capped CdSe/ZnS Nanoparticles

2013

Core–shell (CS) CdSe/ZnS quantum dots (QD) capped with ligands that possess a mercapto or an amino group and a naphthalimide (NI) as chromophore unit, linked by a short ethylene chain (CS@S–NI and CS@H2N–NI, respectively), have been synthesized and fully characterized by infrared and nuclear magnetic resonance spectroscopies, high-resolution transmission electron microscopy, and voltammetry as well as by steady-state absorption and emission spectroscopies. The organic ligands HS–NI and H2N–NI act as bidentate ligands, thereby causing a drastic decrease in the QD emission. This was particularly evident in the case of CS@S–NI. This behavior has been compared with that of commercially availabl…

Multifunctional two-photon active silica-coated Au@MnO Janus particles for selective dual functionalization and imaging.

2014

Monodisperse multifunctional and nontoxic Au@MnO Janus particles with different sizes and morphologies were prepared by a seed-mediated nucleation and growth technique with precise control over domain sizes, surface functionalization, and dye labeling. The metal oxide domain could be coated selectively with a thin silica layer, leaving the metal domain untouched. In particular, size and morphology of the individual (metal and metal oxide) domains could be controlled by adjustment of the synthetic parameters. The SiO2 coating of the oxide domain allows biomolecule conjugation (e.g., antibodies, proteins) in a single step for converting the photoluminescent and superparamagnetic Janus nanopar…

Synthesis of MoO3 Nanostructures and Their Facile Conversion to MoS2 Fullerenes and Nanotubes.

2007

The fast thermolysis of ammonium molybdate leads to a mixture of MoO3 and Mo5.3O14.5(OH)2.8(H2O)1.36 with spherical and rod-like morphologies. The oxide mixture can be converted in quantitative yield to inorganic fullerene-type (IF) MoS2 and MoS2 nanotubes (NT) by H2S reduction using a facile and quick procedure. The products were studied by X-Ray Diffraction (XRD) and by Transmission Electron Microscopy (TEM). TEM analysis reveals that the spherical and rod-like morphology of the oxide precursor is preserved during the H2S treatment.

Structural properties of GaN quantum dots

2006

The strain state and the deformation profile of GaN quantum dots embedded in AlN have been measured by high resolution electron microscopy, medium energy ion scattering and grazing incidence X-ray diffraction. The results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a non biaxial strain which drastically decreases when going from the basal plane up to the apex of the dots. We also demonstrate that AlN is distorted in the surroundings of the dots, which provides the driving force for vertical correlation of GaN dots when the AlN spacer between successive planes is thin enough.