Search results for "TRID"
showing 10 items of 753 documents
WEAR PERFORMANCE OF CERAMIC CUTTING-TOOL MATERIALS WHEN CUTTING STEEL
1991
Abstract Some test cycles have been carried out in continuous cutting conditions, employing cutting parameters (feed, depth of cut and cutting speed) chosen following experimental planes and suitable test fields. The wear tests have been carried out on AISI 1040 steel with cutting speeds from 5m/sec to 11m/sec. The silicon nitride, sintered carbide, cubic boron nitride and alumina reinforced with SiC whiskers inserts, have shown, at each assigned cutting parameter, poor wear resistance when cutting steel. Alumina and alumina in submicron grain, which has been toughened by ZrO2 phase transformation, and the oxide-based alumina, have been the better wear resistance. The mixed based alumina ha…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Stability of Halloysite, Imogolite, and Boron Nitride Nanotubes in Solvent Media
2018
Inorganic nanotubes are attracting the interest of many scientists and researchers, due to their excellent application potential in different fields. Among them, halloysite and imogolite, two naturally-occurring aluminosilicate mineral clays, as well as boron nitride nanotubes have gained attention for their proper shapes and features. Above all, it is important to reach highly stable dispersion in water or organic media, in order to exploit the features of this kind of nanoparticles and to expand their applications. This review is focused on the structural and morphological features, performances, and ratios of inorganic nanotubes, considering the main strategies to prepare homogeneous col…
Evaluation of Gallium Nitride Transistors in Electronic Power Conditioners for TWTAs
2015
The aim of this paper is to evaluate the benefits of replacing Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching Converter (ZVZCPS). This converter is usually used as power supply of the travelling-wave tube amplifiers (TWTAs) in aerospace applications. In this paper, firstly the converter is theoretically analyzed, obtaining its operation, losses and efficiency equations, these equations are used to obtain optimizations maps based on the main system parameters. In this way, the ideal design parameters can be visually obtained. These optimization maps are the key to quantify the potential benefits of GaN tra…
Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method
2015
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…
Scaling the Sensitivity of Integrated Plasmo-Photonic Interferometric Sensors
2019
We present a new optical biosensing integration approach with multifunctional capabilities using plasmonic and photonic components on the same chip and a new methodology to design interferometric b...
Optical and Vibrational Properties of Self-assembled GaN Quantum Dots
2008
Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …
Raman measurements on GaN thin films for PV - purposes
2012
Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
2019
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics
Photocycle of Excitons in Nitrogen-Rich Carbon Nanodots: Implications for Photocatalysis and Photovoltaics
2020
Nitrogen-rich carbon nanodots have emerged as promising nanomaterials for a wide range of applications where a highly emissive and photoactive material with low toxicity and cost-effectiveness is required. One of their hallmarks is indeed a bright, tunable fluorescence of excitonic nature. Disentangling the origin of their optical absorption and fluorescence properties and uncovering relaxation channels and interactions with solvents are some of the most debated issues in the field. Uncovering these aspects is essential for targeted applications, especially in the fields of photocatalysis but also photovoltaics and optoelectronics. Here, we present dedicated transient absorption measurement…