Search results for "Temperature coefficient"
showing 5 items of 25 documents
Temperature-dependent angular resolved UV-photoemission spectroscopy from CeNi2Ge2
2001
Abstract Pronounced temperature effects in angular resolved ultraviolet photoelectron spectroscopy from the (001) surface of the ternary heavy fermion compound CeNi 2 Ge 2 are presented. The measurements were performed on atomically clean and well-ordered thin films grown on a W(110) substrate. A strongly enhanced intensity at the Fermi edge ( ϵ F ) is observed at low-temperatures if the spectra are excited by means of HeI light ( hν =21.2 eV). In addition, the work function is dramatically increased with temperature, exhibiting an unusually high positive temperature coefficient of about 0.65 meV/K. The observed temperature dependency suggests a strong redistribution of the states near the …
On the Variability of the Temperature Coefficients of mc-Si Solar Cells with Irradiance
2016
Abstract The temperature sensitivity of silicon solar cells is in general assumed to be constant with irradiance in PV forecasting models, although it has been demonstrated experimentally that this is not true. In this study a theoretical model is established that describes the variation of the temperature coefficients of a silicon solar cell as a function of the irradiance. It is shown that the temperature sensitivity of the solar cell efficiency is decreasing with the irradiance and that the main reason for this behavior comes from the increase of the open-circuit voltage with light intensity. Moreover, a dependency of the cell's ideality factor on the irradiance has to be assumed to rece…
Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications
2012
The objective of the work was the design of a Wheatstone bridge current sensor using MTJ as magnetoresistive elements. Each one of the four resistances of the bridge consists on 360 MTJ single elements connected in series for improved electrical robustness. A printed circuit board (PCB) was designed with a U-shaped copper trace placed under the PCB maintaining a 1.1 mm separation distance between sensor and trace. A 160% of tunnel magnetoresistance effect in the single junction and a 120% in its corresponding series elements connection has been achieved with a sensitivity of 9.2 Ω/Oe in a 65 Oe linear range. The DC sensor sensitivity in response to an external DC current sweeps of ±10, ±20,…
Temperature Coefficients of Compensated Silicon Solar Cells – Influence of Ingot Position and Blend-in-ratio
2015
Published version of an article in the journal: Energy Procedia. Also available on Science Direct: http://dx.doi.org/10.1016/j.egypro.2015.07.004 Solar-grade silicon made from a metallurgical route presents boron and phosphorus compensation. Earlier work has shown that cells made from such material produce more energy than reference polysilicon modules when the temperature and irradiance is high. In the present study, solar cells from two different ingots with different blend-in-ratios were made from wafers at varying ingot heights in order to investigate how the temperature coefficients vary with compensation level and ingot height. The results suggest that solar modules made with solar ce…
Temperature profiles of field-aged multicrystalline silicon photovoltaic modules affected by microcracks
2021
In this work, the temperature sensitivities of field-aged multicrystalline silicon PV modules affected by microcracks are investigated. It is found that the temperature coefficient of efficiency of all modules has increased more than 10 times over the 20 years period, mainly due to a degradation in the temperature coefficients of fill factor. Temperature coefficient of efficiency of PV modules affected by microcracks changed from -0.44 %/ °C to -1.51 %/°C under solar irradiance conditions at 1010 - 1030 W/m2. Inconsistent values for the Evans–Floschuetz efficiency ratio versus temperature plots for the microcrack affected modules were also observed.