Search results for "Toe"
showing 10 items of 3824 documents
Tunable field effect properties in solid state and flexible graphene electronics on composite high – low k dielectric
2016
We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm2/V at VD = −5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexib…
Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Organic Transiting and Eth…
2016
International audience; The two-component phthalocyaninato copper-based heterojunctions fabricated from n-type CuPc(COOC8H17)(8) and p-type CuPc(OC8H17)(8) by a facile two-step solution-processing quasi-Langmuir-Shafer method with both n/p- and p/n-bilayer structures are revealed to exhibit typical ambipolar air-stable organic thin-film transistor (OTFT) performance. The p/n-bilayer devices constructed by depositing CuPc(COOC8H17)(8) film on CuPc(OC8H17)(8) sub-layer show superior OTFT performance with hole and electron mobility of 0.11 and 0.02 cm(2) V-1 s(-1), respectively, over the ones with n/p-bilayer heterojunction structure with the hole and electron mobility of 0.03 and 0.016 cm(2) …
Luminescence and electron transport properties of GaN and AlN layers
2001
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation
2019
An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…
Photoconductivity & photoelectron emission of LiGaO2 crystal excited in intrinsic absorption range
2019
This research is funded by the Latvian Council of Science, project “Research of luminescence mechanisms and dosimeter properties in prospective nitrides and oxides using TL and OSL methods], project No. lzp-2018/0361.
The shiny side of copper: bringing copper(i) light-emitting electrochemical cells closer to application
2020
Heteroleptic [Cu(P^P)(N^N)][PF6] complexes, where N^N is 5,50-dimethyl-2,20-bipyridine (5,50-Me2bpy), 4,5,6-trimethyl-2,20-bipyridine (4,5,6-Me3bpy), 6-(tert-butyl)-2,20-bipyridine (6-tBubpy) and 2-ethyl-1,10- phenanthroline (2-Etphen) and P^P is either bis(2-(diphenylphosphino)phenyl)ether (POP, PIN [oxydi(2,1- phenylene)]bis(diphenylphosphane)) or 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene (xantphos, PIN (9,9-dimethyl-9H-xanthene-4,5-diyl)bis(diphenylphosphane)) have been synthesized and their NMR spectroscopic, mass spectrometric, structural, electrochemical and photophysical properties were investigated. The single-crystal structures of [Cu(POP)(5,50-Me2bpy)][PF6], [Cu(xantphos)(5,…
Disruption of apical-basal polarity of human embryonic stem cells enhances hematoendothelial differentiation
2007
Abstract During murine development, the formation of tight junctions and acquisition of polarity are associated with allocation of the blastomeres on the outer surface of the embryo to the trophoblast lineage, whereas the absence of polarization directs cells to the inner cell mass. Here, we report the results of ultrastructural analyses that suggest a similar link between polarization and cell fate in human embryos. In contrast, the five human embryonic stem cell (hESC) lines displayed apical-basal, epithelial-type polarity with electron-dense tight junctions, apical microvilli, and asymmetric distribution of organelles. Consistent with these findings, molecules that are components of tigh…
DIGITAL EMULATION OF DIELECTRIC RELAXATION FUNCTIONS FOR CAPACITIVE SENSORS OF NON-DESTRUCTIVE DIELECTRIC SPECTROMETRY
2019
Applications of vacuum vapor deposition for perovskite solar cells: A progress review
2022
Metal halide perovskite solar cells (PSCs) have made substantial progress in power conversion efficiency (PCE) and stability in the past decade thanks to the advancements in perovskite deposition methodology, charge transport layer (CTL) optimization, and encapsulation technology. Solution-based methods have been intensively investigated and a 25.7% certified efficiency has been achieved. Vacuum vapor deposition protocols were less studied, but have nevertheless received increasing attention from industry and academia due to the great potential for large-area module fabrication, facile integration with tandem solar cell architectures, and compatibility with industrial manufacturing approach…
Simple approach for an electron extraction layer in all-vacuum processed n-i-p perovskite solar cell
2021
Vacuum processing is considered to be a promising method allowing the scalable fabrication of perovskite solar cells (PSCs). In vacuum processed PSCs, the n-i-p structure employing organic charge transport layers is less common than the p-i-n structure due to limited options to achieve an efficient electron extraction layer (EEL) on indium tin oxide (ITO) with vacuum thermal evaporation. There are a number of specific applications where an n-i-p structure is required and therefore, it is of interest to have alternative solutions for the n-type contact in vacuum processed PSCs. In this work, we report an efficient vacuum deposited EEL using a mixture of conventional organic small molecules, …