Search results for "Transistor"
showing 4 items of 234 documents
Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future.
2020
As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progr…
Impact of Gamma Radiation on Dynamic R
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) char…
On the achievement of high performance organic thin film transistors by solution processes
2010
Itsejärjestäytyvä DNA-kultananopartikkeli-rakenne yhden elektronin transistorina
2012
Tässä tutkielmassa selvitettiin kultananopartikkelien ja itsejärjestäytyvän DNA-järjestelmän soveltuvuutta nanoteknologian komponenttina. Työssä yhdistetään funktionalisoituja kultapartikkeleita jo valmiiksi tutkittuun itsejärjestäytyvään DNA-rakenteeseen työnimeltään BAB. Se muodostuu kolmen TX-tiilen ketjusta, johon suunnittelin kandidaatin tutkinnossani kiinnityskohdat kultapartikkeleille. Yhdistämällä kultapartikkelit ja BAB-rakenne saadaan muodostettua kolmen partikkelin ketju, ja tällä rakenteella pyritään muodostamaan yhden elektronin transistori: Toiminta yhden elektronin transistorina pyrittiin havainnoimaan Coulombin saarron avulla mittaamalla differentiaalista konduktanssia sekä …