Search results for "Vacancy defect"
showing 10 items of 178 documents
Cross-relaxation studies with optically detected magnetic resonances in nitrogen-vacancy centers in diamond in an external magnetic field
2020
In this paper cross-relaxation between nitrogen-vacancy (NV) centers and substitutional nitrogen in a diamond crystal was studied. It was demonstrated that optically detected magnetic resonance signals (ODMR) can be used to measure these signals successfully. The ODMR were detected at axial magnetic field values around 51.2~mT in a diamond sample with a relatively high (200~ppm) nitrogen concentration. We observed transitions that involve magnetic sublevels that are split by the hyperfine interaction. Microwaves in the frequency ranges from 1.3 GHz to 1.6 GHz ($m_S=0\longrightarrow m_S=-1$ NV transitions) and from 4.1 to 4.6 GHz ($m_S=0\longrightarrow m_S=+1$ NV transitions) were used. To u…
Optical polarization of nuclear ensembles in diamond
2012
We report polarization of a dense nuclear-spin ensemble in diamond and its dependence on magnetic field and temperature. The polarization method is based on the transfer of electron spin polarization of negatively charged nitrogen vacancy color centers to the nuclear spins via the excited-state level anti-crossing of the center. We polarize 90% of the 14N nuclear spins within the NV centers, and 70% of the proximal 13C nuclear spins with hyperfine interaction strength of 13-14 MHz. Magnetic-field dependence of the polarization reveals sharp decrease in polarization at specific field values corresponding to cross-relaxation with substitutional nitrogen centers, while temperature dependence o…
Hyperfine level structure in nitrogen-vacancy centers near the ground-state level anticrossing
2019
Energy levels of nitrogen-vacancy centers in diamond were investigated using optically detected magnetic-resonance spectroscopy near the electronic ground-state level anticrossing (GSLAC) at an axial magnetic field around 102.4~mT in diamond samples with a nitrogen concentration of 1~ppm and 200~ppm. By applying radiowaves in the frequency ranges from 0 to 40 MHz and from 5.6 to 5.9 GHz, we observed transitions that involve energy levels mixed by the hyperfine interaction. We developed a theoretical model that describes the level mixing, transition energies, and transition strengths between the ground-state sublevels, including the coupling to the nuclear spin of the NV center\textquotesing…
Prospects of SPIN Gyroscopes Based on Nitrogen-Vacancy Centers in Diamond
2019
This project aims to develop solid-state gyroscopes based on ensembles of negatively charged nitrogen-vacancy (NV) centers in diamond [1], [2]. The NV center is a defect formed in diamond by one substitutional nitrogen atom and an adjacent vacancy. The NV- center features a ground state with electronic spin $\mathrm{S}=1$ , which can be initialized, manipulated, and detected via convenient optical, microwave and radiofrequency transitions (Fig. 1). Nuclear spins are appealing in the context of gyroscopes because they have much smaller gyromagnetic ratios than that of the electron (by a factor of about 1000), reducing the requirements on static magnetic-field stability and homogeneity. The l…
Dynamic N14 nuclear spin polarization in nitrogen-vacancy centers in diamond
2020
We studied the dynamic nuclear spin polarization of nitrogen in negatively charged nitrogen-vacancy (NV) centers in diamond both experimentally and theoretically over a wide range of magnetic fields from 0--1100 G covering both the excited-state level anticrossing and the ground-state level anticrossing magnetic field regions. Special attention was paid to the less studied ground-state level anticrossing region. The nuclear spin polarization was inferred from measurements of the optically detected magnetic resonance signal. These measurements show that a very large (up to $96\ifmmode\pm\else\textpm\fi{}2%$) nuclear spin polarization of nitrogen can be achieved over a very broad range of mag…
Use of site symmetry in supercell models of defective crystals: Polarons in CeO2
2017
The authors thank R. Merkle and G. W. Watson for stimulating discussions. E. K. also acknowledges partial financial support from the Russian Science Foundation for the study of charged defects under the project 14-43-00052. A. C. also acknowledges financial support from the University of Latvia Foundation (Arnis Riekstins's "MikroTik" donation). E. K. and D. G. express their gratitude to the High Performance Computer Centre in Stuttgart (HLRS, project DEFTD 12939) for the provided computer facilities whereas R. A. E. thanks the St. Petersburg State University Computer Center for assistance in high-performance calculations.
Screening of positrons in semiconductors and insulators
1989
Theoretical models are presented for the enhancement of the electron density at a positron in a semiconductor or insulator host. The model better suited for typical semiconductors is based on the many-body theory for the screening of a positron in electron gas. The starting point of the model for insulators is the atomic polarizability. The common parameter in both models is the high-frequency dielectric constant. Moreover, the enhancement depends on the ambient electron density in the semiconductor model and on the unit-cell volume in the insulator model. With use of the models developed, positron lifetimes in perfect semiconductor and insulator crystals have been calculated. In the calcul…
Vacancies and Carbon Impurities in Iron
1981
Point defects in electron-irradiated high-purity α-iron have been studied by positron lifetime measurements. We show that the migration stage of monovacancies occurs already as low as at 220 K, which results in agglomeration of small three-dimensional vacancy clusters. Furthermore, we irradiated carbon-doped iron specimens, where formation of highly asymmetric monovacancycarbon atom pairs was detected during the migration stage of monovacancies at 220 K.
Characterization of non-polar ZnO layers with positron annihilation spectroscopy
2008
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 10 cm−3 to low 10 cm−3) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×10 cm−3 in all the samples with thicknesses v…
Computational analysis of positron experiments
1984
A number of applications of the calculational scheme developed by Puska and Nieminen (1982-3) are reported and the predictive power of the scheme is substantiated. Effects on positron parameters of relaxation and of N or H impurities in vacancies in Mo are calculated and employed to analyse recent experiments. Predictions pertaining to H decoration of vacancies in Al and Ni suggest the use of positron lifetime studies of these systems. Positron responses to submicroscopic vacancy clusters decorated with Kr and to large Kr bubbles in Cu are calculated and used to analyse recent experiments. To accomplish this the scheme is generalised to incorporate crystals of inert gas. In turn this makes …