Search results for "Vacancy defect"
showing 10 items of 178 documents
<title>Large-scale computer simulations of metal/oxide interfaces with defects</title>
2003
Ab initio slab simulations have been performed for silver adhesion to the perfect and defective MgO(001) surfaces. For 1/4 Ag monolayer (ML) coverage of perfect substrate, we observe small silver adhesion energies over both O2- and Mg2+ ions on a regular MgO(001) substrate (0.23 and 0.22 eV per Ag atom, respectively), with negligible interfacial charge transfer towards metal atoms. For larger Ag coverages (beginning with 1/2 ML), silver adsorption over regular O2- ions is much more favorable. We demonstrate that point surface defects on a magnesia surface increase markedly the metal adhesion energy and cause a redistribution of the electron density across the interface. The results for elec…
Computed positron lifetimes in vacancies and vacancy-iron clusters in gold
1983
Abstract Annihilation characteristics are calculated for positrons trapped in clean and impurity decorated vacancy clusters in Au. The positron lifetime depends strongly on the structure of the clusters. In a strongly relaxed vacancy cluster, the lifetime can become smaller than the lifetime in a single vacancy. The substitution of some neighbour atoms of a vacancy cluster by Fe atoms has only a minor effect on the positron lifetimes.
Kinetics of coloration of anodic electrochromic films of WO3·H2O
1980
Polycrystalline layers of WO3·H2O are obtained by anodization of tungsten in 1 N H2SO4 at 70° C. The cathodic reduction of these layers in acid solutions causes the formation of blue WO3−x·H2O (0<x⩽:0.12) oxides. The kinetics of coloration are investigated by galvanostatic and potentiostatic techniques. The experimental results are compared with the theoretical data obtained by solving the diffusion equation for a constant flow of oxygen vacancies and for a time-dependent surface vacancy concentration. Except in the initial stage of coloration, the process controlling rate can be ascribed to the diffusion of oxygen vacancies from the oxide-electrolyte interface into the bulk of the layers. …
Synthesis, Characterization, and Catalysis of β3-[(CoIIO4)W11O31(O2)4],10- the First Keggin-Based True Heteropoly Dioxygen (Peroxo) Anion. Spectrosco…
1999
Reactions of hydrogen peroxide with several lacunary polyoxometalates of the 1:11 series, XW11O39m- (X = Co3+, Ga3+, Fe3+, Si4+, and P5+), are reported. Synthetic pathways to new polyoxotungstates incorporating dioxygen moieties (peroxo and/or superoxo) are developed. The key step involves treating lacunary precursors with H2O2 in strongly buffered aqueous solutions. Upon reaction of H2O2 with α-[Co3+W11O39],9- (a) the central tetrahedral Co3+ is reduced to Co2+ and (b) each of the four unshared oxygens surrounding the vacancy are replaced by a peroxide group, yielding salts of the tetraperoxide anion β3-[(Co2+O4)W11O31(O2)4]10- (1). These results are unequivocally established by a combinat…
Diffusion of oxygen in nickel: A variable charge molecular dynamics study
2010
Abstract Variable charge molecular dynamics have been performed to study the diffusion mechanisms of oxygen atoms (O) in nickel (Ni) in the temperature range 950 K–1600 K. It is observed that oxygen does not diffuse via jumps of oxygen through interstitial sites but via a vacancy diffusion mechanism. The oxygen diffusivity can be well described by an Arrhenius law over the temperature range considered. The oxygen diffusion coefficient has been analysed and indicates a value of E a = 1.99 eV for the activation energy and D 0 = 39.2 cm 2 s − 1 for the pre-exponential factor. Our numerical results were compared with a compilation of experimental and theoretical studies, and exhibit a good agre…
Modeling of Point Defects in Corundum Crystals
1994
Several different approaches including Hartree-Fock ab initio cluster calculations, semiempirical INDO calculations, and atom-atom potentials were used for modeling of the spatial and electronic structure as well as migration mechanisms of both intrinsic defects (self-trapped and defect-trapped holes, O and Al vacancies) and impurities (transition-metal ions like Co, Fe, Mg, Mn, Ti). The atomic structure of all hole centers is found to be similar to V[sub K] centers in alkali halides (two-site model); their formation is energetically favorable. The energy required for 60[degree] hole reorientations inside the basic oxygen triangles is found to be similar to both the energy for hops between …
Sidebands in Optically Detected Magnetic Resonance Signals of Nitrogen Vacancy Centers in Diamond
2013
We study features in the optically detected magnetic resonance (ODMR) signals associated with negatively charged nitrogen-vacancy (NV) centers coupled to other paramagnetic impurities in diamond. Our results are important for understanding ODMR line shapes and for optimization of devices based on NV centers. We determine the origins of several side features to the unperturbed NV magnetic resonance by studying their magnetic field and microwave power dependences. Side resonances separated by around 130 MHz are due to hyperfine coupling between NV centers and nearest-neighbor C-13 nuclear spins. Side resonances separated by approximately {40, 260, 300} MHz are found to originate from simultan…
Investigation of Solid State Diffusion Processes Involved in the Zinc Oxide Sulfidation Reaction
2016
Sulfidation of undoped and aluminum doped zinc oxide materials has been performed by TGA under a H2S atmosphere in order to evaluate the impact of the doping element on sulfidation reaction kinetics and mechanism. The presence of aluminum seems to slow-down the reaction kinetics. This phenomenon might be explained by a modification of the solid state diffusion processes involved in ZnO sulfidation reaction and the related ZnS outward growth, assuming the presence of aluminum atoms inside ZnO and ZnS phases. In order to determine solid state diffusion mechanisms controlling the reaction kinetics, molecular dynamics simulations were performed using a Coulomb-Buckingham potential. Firstly, the…
A theoretical investigation on the Cd doping of Cu-depleted CuInSe<inf>2</inf> materials
2011
Because of their outstanding characteristics and affordable price, polycrystalline thin film solar cells based on CuIn 1−x Ga x Se 2 (CIGS) absorber layer have emerged to be one of the most promising materials for photovoltaic applications [1–2]. To further enhance the efficiency of these solar cells much effort is spent on the in-depth investigation of the production methods. However, the effect of structural defects and dopants upon the macroscopic properties and morphology of epitaxially grown CIGS films is not yet fully understood [3]. More importantly, it is well established that the best cells can be prepared by growing the CIGS absorber layer under Cu-poor conditions [4]. Thus, it is…
First principles calculations of SrZrO3 bulk and ZrO2-terminated (001) surface F centers
2016
Abstract Using a supercell model and B3PW hybrid exchange-correlation functional in the framework of the density functional theory (DFT), as it is implemented in the CRYSTAL computer code, we performed ab initio calculations for the F -center located in the SrZrO 3 bulk and on the ZrO 2 -terminated (001) surface. According to the results of performed relaxation of atoms around the defect, two nearest Zr and four Sr atoms are repulsed, but all oxygen atoms are attracted towards both, the bulk and (001) surface F -center. The displacement magnitudes of atoms surrounding the bulk F -center are smaller than around the (001) surface F -center. The B3PW calculated SrZrO 3 bulk optical band gap (5…