Search results for "Wetting layer"
showing 10 items of 15 documents
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
2011
We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaAs upper confining layers. Owing to these particular design and growth parameters, quantum dot densities are in the order of 4-5x109 cm-2 with emission wavelengths ranging from 1.20 to 1.33 µm at 10 K, features that make these structures interesting for single-photon operation at telecom wavelength. High resolution structural techniques show that In content and composition profiles in the structures depend on …
Surface effects on spinodal decomposition in binary mixtures and the interplay with wetting phenomena.
1994
The phase separation of binary mixtures in a semi-infinite geometry is investigated both by a phenomenological theory and by numerical calculations using a discrete equivalent of the descriptive equations. In the framework of ``model B'' (which describes solid binary mixtures), attention is paid to a proper treatment of the boundary conditions at the free surfaces. We confine ourselves to short-range surface forces and consider parameter values that correspond to both nonwet and wet surfaces in thermal equilibrium. During the initial stages of spinodal decomposition, after a quench from considering an initial condition that corresponds to a completely random concentration distribution, one …
Growth Kinetics of Wetting Layers at Surfaces
1990
Monte Carlo simulation of lattice gas models for the wetting transitions in systems with short range forces are described. A nearest-neighbor simple cubic lattice with nonconserved “Glauber dynamics” is used, applying a slab geometry (LxL cross section). It is shown that the growth proceeds in two stages: for short times t, the thickness of the wetting layer at an initially nonwet wall increases proportional to the logarithm of the time; for t » L2(lnL)2 the thickness increases proportional to t1/2/L. Generalizations to other systems are briefly discussed. Also two-dimensional growth of a wetting film at surface steps is considered, considering “terraces” of an LxM geometry with M»L as subs…
Influence of charge transfer doping on the morphologies of C60islands on hydrogenated diamond C(100)-(2×1)
2012
The adsorption and island formation of C${}_{60}$ fullerenes on the hydrogenated C(100)-($2\ifmmode\times\else\texttimes\fi{}1$):H diamond surface is studied using high-resolution noncontact atomic force microscopy in ultrahigh vacuum. At room temperature, C${}_{60}$ fullerene molecules assemble into monolayer islands, exhibiting a hexagonally close-packed internal structure. Dewetting is observed when raising the substrate temperature above approximately 505 K, resulting in two-layer high islands. In contrast to the monolayer islands, these double-layer islands form extended wetting layers. This peculiar behavior is explained by an increased molecule-substrate binding energy in the case of…
From dewetting to wetting molecular layers: C60 on CaCO3(10 ̅14) as a case study.
2012
We report the formation of extended molecular layers of C-60 molecules on a dielectric surface at room temperature. In sharp contrast to previous C-60 adsorption studies on prototypical ionic crystal surfaces, a wetting layer is obtained when choosing the calcite (CaCO3)(10 (1) over bar4) surface as a substrate. Non-contact atomic force microscopy data reveal an excellent match of the hexagonal lattice of the molecular layer with the unit cell dimension of CaCO3(10 (1) over bar4) in the [01 (1) over bar0] direction, while a lattice mismatch along the [(4) over bar(2) over bar 61] direction results in a large-scale moire modulation. Overall, a (2 x 15) wetting layer is obtained. The distinct…
Growth mode and self-organization of LuPc2on Si(001)-2×1vicinal surfaces: An optical investigation
2012
We report an investigation of the initial growth and of the self-organization of lutetium biphthalocyanine LuPc2 on Si(001)-2 x 1 vicinal surfaces. Using surface-sensitive optical spectroscopies, namely, surface-difference-reflectance spectroscopy (SDRS) and reflectance-anisotropy spectroscopy (RAS), together with local-probe microscopies, we are able to propose a scenario for the growth mode up to about 20 nm. We demonstrate that the growth mode initially proceeds through the formation of a wetting layer, followed by the formation of clusters whose sizes increase while keeping a constant shape in which the molecules are inclined. Moreover, the LuPc2 molecules are self-organized along the s…
Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
2010
Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski–Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {114} or {118}, ending with the formation of mature quantum wires with {114} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calcu…
Optical and Vibrational Properties of Self-assembled GaN Quantum Dots
2008
Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …
Ultrafast Gain Recovery in Quantum Dot based Semiconductor Optical Amplifiers
2007
Summary form only given. The limiting factor in ultrahigh bit rate amplification is the ultrafast population recovery in the resonant level, which is mainly limited by carrier capture and relaxation processes in the QD. We use pump-probe measurements resonant to the QDs confined states energies (ground and excited state) to investigate the response to a four fs-pulse train of 1 THz repetition rate. A deep insight about the capture process implied is then obtained, and direct capture from the wetting layer is identified as the dominant mechanism in the high current regime.
Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions
2002
5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).