Search results for "Wire"
showing 10 items of 1383 documents
A 3.3 V Output Voltage Optical Plasmonic Solar Energy Harvester
2021
In this paper, for the first time, the design of a solar energy-harvester (EH) based on plasmonic optical nanorectennas and without the step-up converter is presented. The novel optical harvester with a 49497∗14286 nanoarray of about 21,21 mm2 presents an output voltage value of 3.3 V and an output current of 10 mA.
Rational assembly and dual functionalization of Au@MnO heteroparticles on TiO2 nanowires
2014
Au–MnO heteroparticles were immobilized on the surface of TiO2 nanowires and tagged subsequently with a fluorescent ligand. The immobilization of the Au@MnO heteroparticles was achieved by functionalizing the TiO2 nanowire support with a polymer containing catechol anchor groups for binding to the metal oxide surface and amine groups for conjugation to the Au domains of the Au@MnO heteroparticles. The Au domain of the resulting TiO2@Au–MnO nanocomposite could be functionalized selectively with a thiol-tagged 24 mer oligomer containing Texas red (SH-ODN-TXS red), whereas a green dye (NBD–Cl) could be anchored selectively to the TiO2 “support” using the free amine groups of the polymeric liga…
Dielectrophoretic alignment and electrical characterization of CuO nanowire-based systems
2021
Abstract Dielectrophoresis is used to assemble nanowires between metallic electrodes to form scalable functional interconnects. The dielectrophoresis parameters are investigated for semiconductor copper oxide (CuO) nanowires that are desirable for energy conversion and storage, gas sensors and nanoelectromechanical systems. Experimental yields of multiple- and single-nanowire interconnects are explored at dielectrophoresis frequencies from 500 Hz to 500 kHz. The electrical properties of nanowire-electrode physical contact interfaces formed by dielectrophoresis, metal deposition, and dry mechanical transfer are investigated. The electrical transport mechanism in these interconnects is determ…
Nanowires for NEMS Switches
2020
Nanoelectromechanical systems (NEMS) are a promising novel technology for operation in extreme conditions (e.g. high temperature and radiation levels), where complementary semiconductor technology devices might fail due to electronic instability. An example for a NEMS device is a nanowire-based switch, which employs mechanical deflection of a nanowire to open and close an electrical circuit. To date, assembly and operation of individual nanowire based NEMS switches have been successfully demonstrated at laboratory level, but their further technological development remains a challenge. This chapter gives an insight into the current advances in applications of nanowires for NEMS switches. Syn…
An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
2010
This work presents our preliminary results regarding an electrochemical process which allows the growth of nanostructured materials by means of nanopore templates. Also we analyze possible applications of this process to fabricate nanostructured semiconductors, such as CIGS, suitable for photovoltaic devices, and we consider the implications from the perspective of characterization techniques and device modelling when using such a technology.
Superconducting properties of in-plane W-C nanowires grown by He+ Focused Ion Beam Induced Deposition
2021
Focused ion beam induced deposition (FIBID) is a nanopatterning technique that uses a focused beam of charged ions to decompose a gaseous precursor. So far, the flexible patterning capabilities of FIBID have been widely exploited in the fabrication of superconducting nanostructures, using the W(CO)6 precursor mostly in combination with a focused beam of Ga+ ions. Here, the fabrication and characterization of superconducting in-plane tungsten-carbon (W-C) nanostructures by He+ FIBID of the W(CO)6 precursor is reported. A patterning resolution of 10 nm has been achieved, which is virtually unattainable for Ga+ FIBID. When the nanowires are patterned with widths of 20 nm and above, the deposit…
Nanotransducers on printed circuit boards by rational design of high-density, long, thin and untapered ZnO nanowires
2018
Abstract Nanotransducers can offer crucial advantages in comparison with conventional sensors and actuators. However, interfacing and packaging nanostructures into complete electronic systems is very complex. Here we describe a wet chemical method for cointegrating arrays of ZnO nanowires into systems on printed circuit boards (PCBs). First, we deposit on the PCB a MnOOH layer for reproducibly increasing the nanowires density. Afterwards, we numerically demonstrate that the ligand ethylenediamine, at the isoelectric point of the ZnO nanowires tips, can effectively control, at very low concentrations, both zinc speciation and supersaturation in the nutrient solution. Accordingly, we combine …
Electron beam induced growth of silver nanowhiskers
2015
Abstract In this paper we report an electron beam induced rapid (up to several tens of nm/s) growth of silver nanowhiskers from silver nanowire networks coated with TiO 2 by sol–gel method. Different growth conditions are tested and it is demonstrated that growth is optimal for samples with the film thickness in the range 50–200 nm and previously annealed at 400 °C for 5–10 min. Growth mechanism is attributed to cooperative effect of several factors including diffusion of Ag into TiO 2 matrix during annealing, electromigration of Ag atoms caused by strong electric field, and presence of mechanical stresses at interfaces enhanced by thermal expansions due to local heating under e-beam illumi…
Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties.
2015
We present a simple two-stage vapour–solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as “catalysts” for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of…
Controlling dielectrical properties of polymer blends through defined PEDOT nanostructures
2016
[EN] The paper reports the crucial role of the morphology of poly(3,4-ethylenedioxythiophene) (PEDOT) nanostructures on the thermal and dielectric properties of polymer blends prepared thereof. PEDOT nanostructures with two different morphologies (nanoparticles and nanowires) were synthesized. The size for the nanoparticles was in the range 10 40 nm and the diameter of the nanowires was of ca. 200 nm. These nanostructures were blended with an insulating polymer matrix, poly(methyl methacrylate) (PMMA), to evaluate the dielectrical properties of the materials. The results of broadband dielèctric spectroscopy showed a strong correlation between the morphology of the nanostructure and the impr…