Search results for "a-Nb2O5"
showing 2 items of 2 documents
The Influence of Thermal Treatment on the Electronic Properties of a-Nb2O5
2009
The effect of thermal treatments for 1h at 250{degree sign}C in air or under vacuum on the electronic structure of thick amorphous anodic niobia was characterized by electrochemical impedance, differential admittance (DA) and photocurrent spectroscopy (PCS). The analysis of anodized niobia has revealed that it behaves as a pure dielectric. The thermal treatment in air increases the value of the differential capacitance of the niobia sample. The effect is stronger when the thermal treatment is carried out in vacuum and can be cancelled out by reanodizing the oxide to the initial formation potential. In the case of thermally vacuum-treated sample, a behavior typical of semiconducting amorphou…
Modeling of differential admittance behaviour of thin amorphous semiconducting film
2012
The understanding of the electronic properties of thin oxide film is an important step toward the understanding of the mechanisms of film dissolution and breakdown as well as for their application in the field of electrolytic capacitors and solar energy conversion. From this point of view the correct location of the characteristic energy levels (flat band potential, Ufb, and conduction (valence) band edge EC (EV)), of a passive film/electrolyte junction is the preliminary task for a deeper understanding of the mechanism of charge transfer at oxide/electrolyte interface. At this aim the most frequently employed method to locate such characteristic energy levels of semiconductor oxide/electro…