Search results for "absorption spectroscopy"
showing 10 items of 828 documents
Quantitative analysis of rhenium in irradiated tungsten
2021
Abstract Pure tungsten (W), irradiated to 3.5 dpa in a target of the Swiss neutron spallation source (SINQ), was characterized using high-sensitivity HPGe gamma ray spectroscopy to identify the present radionuclides. Synchrotron X-ray absorption spectroscopy was used to quantify the amount of Re produced in the irradiated W. An atomic concentration of 0.61% Re in the irradiated W was determined from the height of the L3-edge X-ray absorption edge jump. Analysis of the local atomic structure from the extended X-ray absorption fine structure (EXAFS) spectra indicates that rhenium (Re) produced in the system is mainly coordinated by W atoms and partly coordinated by void defects. First-princip…
Investigation of precipitate in an austenitic ODS steel containing a carbon-rich process control agent
2018
This work has been carried out within the framework of the German Helmholtz Association and has received funding from the topic “Materials Research for the Future Energy Supply”. The work of M. Parish and Rainer Ziegler is gratefully acknowledged. Thanks are also due to the team of the chemical laboratory at the KIT for performing the chemical analysis. The help of the beamline staff at ELETTRA (project 20140052 ) synchrotron radiation facility is acknowledged. We acknowledge support by Deutsche Forschungsgemeinschaft and Open Access Publishing Fund of Karlsruhe Institute of Technology.
The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2
2000
Abstract The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2.
Transient and stable color centers in neutron irradiated MgO
2008
Abstract The transient absorption and luminescence induced by the pulsed electron beam have been investigated in the MgO single crystal containing transition metal ion (Cr, Mn, Fe) impurities and preliminary irradiated by the fast neutrons. It is supposed that the different behavior of the absorption spectra of the MgO samples preliminary irradiated by the different fast neutron fluence is connected with the destruction of the hole centers and with the creation of interstitial protons and the formation of the microphase Mg(OH)2. We assume that the luminescence band at ∼3.2 eV is connected with F+ color centers.
Characterization of a cylindrical plastic {\beta}-detector with Monte Carlo simulations of optical photons
2017
V. Guadilla et al. -- 5 pags., 8 figs., tab.
Relaxation of electronic excitations in strontium titanate
2002
The transient absorption spectra and kinetics were studied for undoped, lead doped and high purity SrTiO 3 single crystals. The pulsed electron beam induced transient absorption is studied in all crystals. The strong absorption at 0.8 v eV was observed only in high purity SrTiO 3 . This absorption is suggested to arise from intrinsic electron polaron. The bound electron polarons are likely responsible for absorption band at 1.4 v eV. The main luminescence band under excitation pulse is observed at 2.75 v eV. The luminescence decay is faster than that of transient absorption.
The experimental observation of the potential barrier for self-trapped exciton decay into F-H pair in KCl-Na crystals
1995
Abstract The optical absorption induced by the electron pulse irradiation of Na+ doped KCl has been measured. Transient optical absorption band of FA centers was observed at 80 K (LNT). The temperature dependence of FA center formation was studied. It is proposed that the obtained activation energy originates from the potential barrier between the STE perturbed by the cation impurity and the nearest neighbour FA-H pair. The mechanism of the suppression of the defect formation by the monovalent cation impurity in alkali halide crystals is discussed.
ODEPR of indium colour centres in the X- irradiated storage phosphor KBr:In
1995
The results of measurements of the magnetic circular dichroism of the optical absorption (MCDA) and optically detected electron paramagnetic resonance (ODEPR) of X-irradiated KBr :In crystals are presented. The MCDA bands and ODEPR parameters of In°(1) centers and In 2+ centres have been measured. The mechanism of the energy storage in KBr :In crystals is found not to be simply the formation of correlated F centre-In 2+ centre pairs as was assumed previously. Considerable similarities to the storage phosphor BaFBr :Eu 2+ were found for the photostimulated emission and read-out properties.
ODMR of cd impurity centers in gg irradiated BaF2crystals
1995
Abstract The magnetic circular dichroism of the optical absorption (MCD), optically detected magnetic resonance (ODMR) as well as ESR and luminescence in Cd- doped BaF2 crystals γ-irradiated at RT were investigated. MCD signals centered at 295 nm, 290 nm and 365 nm are observed, together with corresponding radiation induced optical absorption bands in the same wavelength regions. The ODMR detected in all these bands is caused by hyperfine (hf) interaction of unpaired spin with Cd− nucleus. Three types of different Cd− related defects have been separated: 1) Cd+ c, represented by the MCD of derivative type centered at 295 nm and hf constant ACd = 480 mT, 2) Cd++c -center having lowered symme…
Thermal relaxation of colour centres in LiBaF3crystals
2001
Abstract Processes in LiBaF3 crystals caused by the thermal decay of F-type centres created by X-irradiation at room temperature have been examined. It is shown that the thermal decay of F-type centres results in the formation of two kinds of electron centres peaking at 630 nm and 740 nm differing in thermal stability. Weak TSL intensity, accompanying the decay of F-centres, also observed as well as the low value of the process activation energy suggest that due to the presence of moving anion vacancies a random walk of the F-centres occur. We propose that in course of the random walk of the F-centres both the aggregate F-centres are created and the annihilation with some complementary radi…