Search results for "absorption."
showing 10 items of 2682 documents
Optical, infrared and electron-microscopy studies of metallic clusters in layered crystals
2007
Abstract An influence of ( Cd i ) n metallic clusters on the optical absorption and phonon spectra of CdI 2 crystals was studied. Metallic clusters of spherical shape were formed during the growth of non-stoichiometric crystals. Radii of clusters are in range from 10 to 500 nm according to scanning electron microscopy (SEM) data. The density of clusters was estimated from fractal dimension calculations. The fractal dimension of ( Cd i ) n clusters has been found to be varied from 1.488 to 1.793. In the framework of Mie theory the spectral and size dependencies of extinction coefficients were calculated. From the experimentally obtained spectra it is evident that the metallic clusters are re…
Thermostimulated recombination processes in LiBaF3 crystals
2004
Abstract The creation of radiation defects in LiBaF 3 crystals at 10 K and the processes of their thermostimulated recombination are investigated. The methods of optical absorption, thermal bleaching of color centers, thermostimulated luminescence and fractional glow technique are used. The radiation defects anneal in a multi-stage process accompanied with thermo-luminescence at 20, 46, 105, 130, 170, 210 and 270 K . Differences in the optical absorption spectra measured before and after the TSL peaks are obtained and recombination parameters are determined. The TSL peak at 20 K arises from the delocalization of H-centers. The presence of two TSL peaks related to V K -centers at 105 and 130…
Charge transfer in the novel donor-acceptor complexes tetra- and hexamethoxypyrene with tetracyanoquinodimethane studied by HAXPES
2012
Abstract The effect of charge transfer (CT) in complexes of the donors tetra - and hexamethoxyprene ( TMP and HMP ) with the classical acceptor tetracyanoquinodimethane ( TCNQ ) was studied using hard X-ray photoemission (HAXPES). Microcrystals of the complex were grown via vapour diffusion from donor–acceptor mixtures. The bulk sensitivity of HAXPES at a photon energy of 6 keV completely eliminates the problem of surface contamination for such delicate organic materials grown from solution. The donor molecules were produced using a novel synthesis route functionalizing polycyclic aromatic hydrocarbons at their periphery. For comparison, spectra were also taken from thin-film samples of the…
Photo- and thermostimulated processes in α-Al2O3
1995
Abstract We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al 2 O 3 crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al 2 O 3 crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above…
Advanced trap spectroscopy using the glow rate technique based on bleaching of color centers
2001
Abstract The glow rate technique (GRT) is the extension of the known heating rate method to the full glow curve. The GRT like the fractional glow technique (FGT) offers a procedure for evaluation of the mean activation energy as a function of temperature in the case of arbitrary thermostimulated relaxation kinetics represented by trap distribution function. The experimental procedure involves at least two subsequent measurements of thermostimulated recombination kinetics at different heating rates. The extension of the GRT to the direct measurements of thermostimulated bleaching of the radiation-induced color centers is presented. The experimental procedure involves measurements of the deca…
Mollwo–Ivey relations for optical absorption bands of the atomic and F′ centres in alkali halides
2001
Evidence indicates that two classes of the transient IR-absorption bands: (a) with maxima at 0.27-0.36 eV in NaCI, KCI, KBr, KI and RbCl and due to shallow electron traps or bound polarons according to Jacobs (Phys. Stat. Sol. B 129 (1985) 755) and Korovkin and Lebedkina (Fiz. Tverd. Tela (Russian) 35 (1993) 642), and (b) with maxima at 0.15-0.36 eV in NaI, NaBr, NaCl : I, KCl : I I, RbCl: I and RbBr : I, due to on-centre STE localised at iodine-dimer according to Hirota et al. (J. Phys. Soc. Japan 63 (1994) 2774, Phys. Rev. B 52 (1995) 7779) and Edamatsu and Hirai (Mater. Sci. Forum 239-241 (1997) 525), are caused by the same defect. We propose that the defect is an atomic alkali impurity …
Luminescence, vibrational and XANES studies of AlN nanomaterials
2007
Abstract The paper reports comparative studies on synthesized aluminium nitride nanotubes, nanoparticles and commercially available micron-sized AlN powder using different spectroscopic techniques: cathodoluminescence measurements (CL), X-ray absorption near edge spectroscopy (XANES) and Fourier-transform infrared spectroscopy (FTIR). Crucial distinctions in CL spectra are observed for nano- and microsized aluminium nitride powders; systematic shift of the IR absorption maximum has been detected for nanostructured aluminium nitride as compared to commercial samples. Through XANES experiments on Al K-edge structural differences between nano- and bulk AlN are revealed, intensity of features i…
About complexity of the 2.16-eV absorption band in MgO crystals irradiated with swift Xe ions
2020
Abstract The precise study of the accumulation and subsequent thermal annealing of the defects responsible for the complex absorption band around 2.16 eV, being under discussion in the literature for a long time, has been performed in highly pure MgO single crystals exposed to 0.23-GeV 132Xe ions with a fluence of Φ = 5 × 1011 − 3.3 × 1014 ions/cm2. Three Gaussian components with the maxima at 2.16, 2.02 and 2.40 eV have been considered as a measure of so-called D1, D2 and D3 defects. Similar to the F and F+ centers, the concentration of these defects increases at high fluences without saturation marks, thus confirming their radiation-induced nature (involvement of novel Frenkel defects). T…
Electronic exchanges between adsorbed Ni atoms and TiO2(110) surface evidenced by resonant photoemission
2011
Abstract Nickel was deposited on stoichiometric TiO2(1 1 0) surface in the 0.02–2.1 equivalent monolayer (eqML) range and analyzed by means of photoemission and resonant photoemission. In the case of very low coverage (lower than 0.1 eqML), deposited nickel reacts with the surface through an electronic transfer from nickel atoms towards titanium ions. This exchange caused the filling of unoccupied Ti3d states leading to the increase of a peak in the TiO2 band gap. These states can be better characterized through resonant photoemission experiments at the Ti 3p → 3d absorption edge: for very low coverage, these states in the TiO2 band gap have resonant behavior of Ti3d electrons rather than N…
RFID passive gas sensor integrating carbon nanotubes
2011
Carbon nanotube (CNT) composites are sensitive to the presence of gases due to their high surface-to-volume ratio and hollow structure that are well suited for gas molecule absorption and storage. Such sensing capability is here integrated with UHF RF identification (RFID) technology to achieve passive and low-cost sensors, remotely readable. CNT film (buckypaper) is used as a localized variable resistive load integrated into a tag antenna, which becomes able to transduce the presence of hazardous gas in the environment, ammonia in this case, into a change of its electromagnetic features. The dynamic range and the hysteresis of the radio sensor are investigated by simulations, equivalent ci…