Search results for "alumiini"

showing 10 items of 30 documents

A Monomeric Aluminum Imide (Iminoalane) with Al–N Triple-Bonding: Bonding Analysis and Dispersion Energy Stabilization

2021

The reaction of :AlAriPr8 (AriPr8 = C6H-2,6-(C6H2-2,4,6-iPr3)2-3,5-iPr2) with ArMe6N3 (ArMe6 = C6H3-2,6-(C6H2-2,4,6-Me3)2) in hexanes at ambient temperature gave the aluminum imide AriPr8AlNArMe6 (1). Its crystal structure displayed short Al–N distances of 1.625(4) and 1.628(3) Å with linear (C–Al–N–C = 180°) or almost linear (C–Al–N = 172.4(2)°; Al–N–C = 172.5(3)°) geometries. DFT calculations confirm linear geometry with an Al–N distance of 1.635 Å. According to energy decomposition analysis, the Al–N bond has three orbital components totaling −1350 kJ mol–1 and instantaneous interaction energy of −551 kJ mol–1 with respect to :AlAriPr8 and ArMe6N̈:. Dispersion accounts for −89 kJ mol–1, …

kemialliset yhdisteetCommunicationChemical SciencesGeneral ChemistrykompleksiyhdisteetalumiiniJournal of the American Chemical Society
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Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors

2021

In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited at low temperatures can contain more than 20 at. % of hydrogen. Both higher temperature and longer purge length decrease the hydrogen and carbon concentrations significantly. In order to track the hydrogen and oxygen movement in the films, heavy water (2H216O) and oxygen-18 enriched water (1H218O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detectio…

kylmäfysiikkaALDvetyAl2O3alumiinioksidilow temperatureTMAatomikerroskasvatusohutkalvotheavy waterhydrogen migration
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Fabrication, Electrical Characterization and 1/f Noise Study of Submicron-sized Superconducting Tunnel Junctions

2016

kylmäfysiikkalämpökäsittelynoiseJosephson junctionsnegative absolute resistancesuprajohtavuus1/f noisemangaanisähkönjohtavuussuprajohteettunnel junctionssuperconductorniobium-based superconducting devicesnanorakenteetcryogenicslow temperature physicsnanofabricationannealingNIS/SIS tunnelingalumiinikohinaniobiumsupercurrent
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Probing the Extremes of Covalency in M-Al bonds: Lithium and Zinc Aluminyl Compounds.

2022

Synthetic routes to lithium, magnesium, and zinc aluminyl complexes are reported, allowing for the first structural characterization of an unsupported lithium-aluminium bond. Crystallographic and quantum-chemical studies are consistent with the presence of a highly polar Li-Al interaction, characterized by a low bond order and relatively little charge transfer from Al to Li. Comparison with magnesium and zinc aluminyl systems reveals changes to both the M-Al bond and the (NON)Al fragment (where NON=4,5-bis(2,6-diisopropylanilido)-2,7-di-tert-butyl-9,9-dimethylxanthene), consistent with a more covalent character, with the latter complex being shown to react with CO<sub>2</sub> vi…

low valent compoundssinkki (metallit)ChemistryMagnesiumaluminiumzincchemistry.chemical_elementkompleksiyhdisteetGeneral ChemistryZincGeneral MedicineBond orderCatalysiskemialliset sidoksetCrystallographylitiumNucleophilelithiumCovalent bondAluminiumaluminylPolarLithiumalumiiniAngewandte Chemie (International ed. in English)
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Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…

lämpökäsittelyjäännösjännityksetALDatomic layer depositionalumiinioksidiohutkalvotatomikerroskasvatusoptiset ominaisuudet
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Modeling the atomic and electronic structure of nanoparticle-ligand interfaces

2013

mallintaminenaurinkokennotalumiinioksidinanohiukkasetsimulointiliganditelectronic structuretitaanidioksidikulta
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High-sensitivity study of levels in 30Al following β decay of 30Mg

2016

γ -ray and fast-timing spectroscopy were used to study levels in 30Al populated following the β− decay of 30Mg. Five new transitions and three new levels were located in 30Al. A search was made to identify the third 1+ state expected at an excitation energy of ∼2.5 MeV. Two new levels were found, at 3163.9 and 3362.5 keV, that are firm candidates for this state. Using the advanced time-delayed (ATD) βγγ (t) method we have measured the lifetime of the 243.8-keV state to be T1/2 = 15(4) ps, which implies that the 243.8-keV transition is mainly of M1 character. Its fast B(M1; 2+ → 3+) value of 0.10(3) W.u. is in very good agreement with the USD shell-model prediction of 0.090 W.u. The 1801.5-k…

neutron-rich nucleibeta decayalumiinimagnesiumexcited statesPhysical Review C
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Effect of Hot Dip Galvanized Steel Surface Chemistry and Morphology on Titanium Hexafluoride Pretreatment

2017

Titanium hexafluoride pretreatments are known to improve paint adhesion and function as a barrier between the coating and the hot dip galvanized (HDG) steel surface. Interactions at the zinc/pretreatment interface are of utmost importance for the formation of pretreatment layers and the corrosion resistance of color coated hot dip galvanized steels. Removal rate of inert aluminum oxide from HDG steel samples by chemical dissolution was studied. XPS measurements showed that the surface Al2O3 layer thickness decreased rapidly already at mild alkaline cleaning, while complete removal of Al required severe etching. Low reactivity of an Al2O3-rich surface was confirmed by impaired formation of a…

pretreatment surface morphologyMaterials sciencechemistry.chemical_elementalumiinioksidi02 engineering and technologyElectron microprobe01 natural sciencesCorrosionaluminum oxidechemistry.chemical_compoundsymbols.namesakeHexafluorideX-ray photoelectron spectroscopy0103 physical sciencessurface morphology010302 applied physicsta114Precipitation (chemistry)Metallurgytechnology industry and agricultureGeneral Engineeringpretreatment021001 nanoscience & nanotechnologyGalvanizationhot dip galvanized steelchemistryhelium ion microscopysymbolsGrain boundary0210 nano-technologyTitaniumAdvances in Materials Physics and Chemistry
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Carbon Monoxide Activation by a Molecular Aluminium Imide: C−O Bond Cleavage and C−C Bond Formation

2020

Anionic molecular imide complexes of aluminium are accessible via a rational synthetic approach involving the reactions of organo azides with a potassium aluminyl reagent. In the case of K 2 [( NON )Al(NDipp)] 2 ( NON = 4,5‐bis(2,6‐di iso propylanilido)‐2,7‐di‐tert‐butyl‐9,9‐dimethyl‐xanthene; Dipp = 2,6‐di iso propylphenyl) structural characterization by X‐ray crystallography reveals a short Al‐N distance, which is thought to be due primarily to the low coordinate nature of the nitrogen centre. The Al‐N unit is highly polar, and capable of the activation of relatively inert chemical bonds, such as those found in dihydrogen and carbon monoxide. In the case of CO, uptake of two molecules of …

small molecule activation010405 organic chemistryaluminiumkompleksiyhdisteetGeneral Medicine010402 general chemistry01 natural sciencescarbon monoxide3. Good health0104 chemical sciencesaktivointiimidealuminylalumiinihiilimonoksidiAngewandte Chemie
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Trapping and Reactivity of a Molecular Aluminium Oxide Ion

2019

Aluminium oxides constitute an important class of inorganic compound that are widely exploited in the chemical industry as catalysts and catalyst supports. Due to the tendency for such systems to aggregate via Al‐O‐Al bridges, the synthesis of well‐defined, soluble, molecular models for these materials is challenging. Here we show that reactions of the potassium aluminyl complex K 2 [( NON )Al] 2 ( NON = 4,5‐bis(2,6‐diiso‐propylanilido)‐2,7‐di‐tert‐butyl‐9,9‐dimethylxanthene) with CO 2 , PhNCO and N 2 O all proceed via a common aluminium oxide intermediate. This highly reactive species can be trapped by coordination of a THF molecule as the anionic oxide complex [( NON )AlO(THF)] ‐ , which …

small molecule activationOxidereduction010402 general chemistry01 natural sciencesHeterolysisCatalysischemistry.chemical_compoundPolymer chemistryMoleculeReactivity (chemistry)alumiiniBond cleavageAluminium oxides010405 organic chemistryaluminiumpelkistysGeneral MedicineGeneral Chemistrykompleksiyhdisteet0104 chemical sciencesHyponitritechemistryoksiditAluminium oxidealuminyloxide
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