Search results for "alumiinioksidi"

In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres

2019

Tarkista embargo, kun artikkeli julkaistu. Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex…

Improved stability of black silicon detectors using aluminum oxide surface passivation

2021

Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…

Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors

2021

In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited at low temperatures can contain more than 20 at. % of hydrogen. Both higher temperature and longer purge length decrease the hydrogen and carbon concentrations significantly. In order to track the hydrogen and oxygen movement in the films, heavy water (2H216O) and oxygen-18 enriched water (1H218O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detectio…

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…

Modeling the atomic and electronic structure of nanoparticle-ligand interfaces

2013

Effect of Hot Dip Galvanized Steel Surface Chemistry and Morphology on Titanium Hexafluoride Pretreatment

2017

Titanium hexafluoride pretreatments are known to improve paint adhesion and function as a barrier between the coating and the hot dip galvanized (HDG) steel surface. Interactions at the zinc/pretreatment interface are of utmost importance for the formation of pretreatment layers and the corrosion resistance of color coated hot dip galvanized steels. Removal rate of inert aluminum oxide from HDG steel samples by chemical dissolution was studied. XPS measurements showed that the surface Al2O3 layer thickness decreased rapidly already at mild alkaline cleaning, while complete removal of Al required severe etching. Low reactivity of an Al2O3-rich surface was confirmed by impaired formation of a…