Search results for "amorphous"
showing 10 items of 790 documents
Room Temperature Instability of E′γ Centers Induced by γ Irradiation in Amorphous SiO2
2008
We study by optical absorption measurements the stability of E'(gamma) centers induced in amorphous silica at room temperature by gamma irradiation up to 79 kGy. A significant portion of the defects spontaneously decay after the end of irradiation, thus allowing the partial recovery of the transparency loss initially induced by irradiation. The decay kinetics observed after gamma irradiation with a 0.6 kGy dose closely resembles that measured after exposure to 2000 pulses of pulsed ultraviolet (4.7 eV) laser light of 40 mJ/cm(2) energy density per pulse. In this regime, annealing is ascribed to the reaction of the induced E'(gamma) centers with diffusing H(2) of radiolytic origin. At higher…
XAFS STUDIES OF OCTAHEDRAL AMORPHOUS OXIDES
1993
The relationships between the structures of octahedral and tetrahedral amorphous oxides, studied by XAFS spectroscopy, are considered. It was found that a-WO3, a-MoO3, a-V2O5 thin films and glasses have strongly distorted, but well defined, oxygen octahedra, which are joined by vertices (a-WO3, a-MoO3) or by vertices and edges (a-V2O5), and form a random network. At the same time, a-IrO2 and a-NiO have less distorted oxygen octahedra, which form the rutile type and rock salt type nanocrystalline structures. The variation of the structure with the change of the metal valence is considered and the possibility of small radius polaron detection by XAFS is discussed.
Grain-size-induced relaxor properties in nanocrystalline perovskite films
2004
Thin films of ${\mathrm{Pb}}_{0.76}{\mathrm{Ca}}_{0.24}{\mathrm{TiO}}_{3}$ (PTC), which is a classical ferroelectric as a bulk material and of the relaxor material $\mathrm{Pb}({\mathrm{Sc}}_{0.5}{\mathrm{Nb}}_{0.5}){\mathrm{O}}_{3}$, have been produced to find out whether nanocrystalline ferroelectric films show a grain-size-induced relaxor behavior. Amorphous films were deposited onto a $\mathrm{Ti}∕\mathrm{Pt}$ coated silicon (100) wafer by reactive $\text{rf}$ sputtering. Different grain sizes were prepared by a controlled annealing process and they were determined by profile analysis of x-ray diffraction spectra. Temperature dependent Raman spectroscopy was used to look for phase trans…
Quantification of low levels of amorphous content in sucrose by hyperDSC.
2005
A method was developed for the quantification of low levels of amorphous content in sucrose with hyperDSC. The method was based on the fact that the change of specific heat at the glass transition is linearly proportional to the amorphous content. It was found out that as annealing time increased, the glass transition temperature moved to a higher temperature and the change of specific heat increased. DeltaC(p) for annealed totally amorphous sucrose was 0.761+/-0.012 Jg(-1) degrees C(-1). Synthetic mixtures with various proportions of crystalline and amorphous sucrose were prepared. The following linear regression between DeltaC(p) and amorphous content was obtained: DeltaC(p)=0.0075x - 0.0…
<title>Holographic recording in amorphous semiconductor films</title>
1997
The present state of the real time holographic recording in amorphous semiconductor films is reviewed including mechanisms, parameters, properties and applications. Effects of the coherent, incoherent and relaxational self- enhancement as well as the influence of the film structure relaxation are considered. Quasi-permanent sub-band-gap light holographic recording is reported for the first time. 157
<title>Photoinduced anisotropy and holographic recording in amorphous chalcogenides</title>
2001
The effect of photoinduced anisotropy and its application to vector hologram recording is reviewed focusing on amorphous chalcogenides. Vector holographic grating recording in amorphous As-S-Se(a-As-S-Se) films is experimentally studied and analyzed in comparison with scalar recording. It is holographically established that a linearly polarized 632.8 nm light produces photoinduced anisotropy and the chalcogen related D+, D- center reorientation and generation mechanism is proposed. It is used to explain the observed peculiarities of vector recording in comparison with scalar recording based on photoinduced structural changes: much lower diffraction efficiency (4 X 10-3% versus 4%), much lar…
Structural characterization of Nigerian coals by X-ray diffraction, Raman and FTIR spectroscopy
2010
Abstract The structural parameters of six Nigerian coals were determined by X-ray diffraction, Raman and FTIR spectroscopy. This study reveals that the coals contain crystalline carbon of turbostratic structure with some amount of highly disordered amorphous carbon. The average lateral sizes ( L a ), stacking heights ( L c ) and interlayer spacing ( d 002 ) of the crystallite structures calculated from the X-ray intensities range from 16.47 to 25.70, 8.12 to 13.25 and 3.48 to 3.58 A, respectively. The L a values derived from the Raman spectra analyses using the classical linear relationship between 1/ L a and the D/G band ratio are higher (27.53–34.67 A) than values obtained from X-ray diff…
A comparative study of heterostructured CuO/CuWO4 nanowires and thin films
2017
Authors are grateful to Reinis Ignatans for XRD measurements.
Holographic recording optimization in amorphous As-Se-S films
2003
The holographic recording parameters of amorphous chalcogenide semiconductor (AChS) thin films under optimization depend on hologram type. So, using self-enhancement effect during recording and wet etching after recording enable possibility to decrease recording energy and increase of signal/noise ratio for embossed holograms. Choosing the appropriate light exposure permit us to achieve equal values of diffraction efficiency (DE) for different diffraction orders during fabrication of light splitting holographic optical elements (HOE). Changing film thickness and recording wavelength it is possible to find optimal conditions for high DE holographic gratings readable at infrared region of lig…
Structure of amorphousGe8Sb2Te11:GeTe-Sb2Te3alloys and optical storage
2009
The amorphous structure of ${\text{Ge}}_{8}{\text{Sb}}_{2}{\text{Te}}_{11}$, an alloy used in the Blu-ray Disc, the de facto successor to digital versatile disk (DVD) optical storage, has been characterized by large-scale (630 atoms, 0.4 ns) density-functional/molecular-dynamics simulations using the new PBEsol approximation for the exchange-correlation energy functional. The geometry and electronic structure agree well with available x-ray diffraction data and photoelectron measurements. The total coordination numbers are Ge: 4.0, Sb: 3.7, and Te: 2.9, and the Ge-Ge partial coordination number is 0.7. Most atoms (particularly Sb) prefer octahedral coordination but 42% of Ge atoms are ``tet…