Search results for "axial"

showing 10 items of 457 documents

Effect of Electromechanical Loading on the Dielectric Properties of PLZT−x/65/35 Ceramics (x = 8 and 8.5)

2011

The influence of uniaxial pressure (0-800 bars) applied parallel to the ac electric field on the dielectric properties of La−modified lead–zirconate−titanate ceramics with the Zr/Ti ratio of 65/35 was investigated. Applying uniaxial pressure leads to the reduction of the peak intensity of the electric permittivity (ϵ), of the frequency dispersion as well as of the dielectric hysteresis. The peak intensity of ϵ becomes diffuse and shifts with increasing the pressure. Our results show that applying uniaxial pressure induces similar effects as increasing the Ti−ion concentration in PZT system. We interpreted our results based on domain switching processes under the action of combined electrome…

PermittivityMaterials scienceDielectricDielectric hysteresisCondensed Matter PhysicsUniaxial pressureElectronic Optical and Magnetic MaterialsStress (mechanics)Electric fieldvisual_artvisual_art.visual_art_mediumCeramicComposite materialPerovskite (structure)Ferroelectrics
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PLZTx/65/35 ceramics (x = 2 and 4) under electromechanical and temperature loading

2010

The effect of uniaxial pressure (0–1000 bars) applied parallel to the ac electric field on dielectric properties of La-modified lead–zirconate–titanate, Pb(Ti,Zr)O3 (PZT), ceramics with Zr/Ti ratio of 65/35 was investigated. The experimental results revealed that applying uniaxial pressure leads to a reduction of the peak intensity of the electric permittivity (e), of the frequency dispersion as well as of the dielectric hysteresis. Moreover, with increasing pressure, the peak intensity of e becomes diffuse and shifts to a higher temperature. It was concluded that applying uniaxial pressure induces similar effects as increasing the Ti–ion concentration in PZT system. The obtained results we…

PermittivityMaterials scienceDielectricUniaxial pressureStress (mechanics)visual_artElectric fieldPeak intensityvisual_art.visual_art_mediumGeneral Materials ScienceCeramicComposite materialInstrumentationPerovskite (structure)Phase Transitions
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Noninvasive monitoring of polymer curing reactions by dielectrometry

2011

A microwave sensor system for the noninvasive monitoring of the curing process of a thermoset material placed inside a metallic mold is described. The microwave sensor is designed as an open-ended coaxial resonator with a curved surface adapted to the mold inner shape. The analysis of the microwave resonator comprises a recently developed method for deembedding the effect of coupling network in overcoupled resonators, so the range of permitted measurements encompass both low and high dielectric losses of polymeric materials. Results show that noninvasive, continuous monitoring of the microwave dielectric properties of the thermoset material can be performed in real time, allowing one to che…

PermittivityPolymeric materialMaterials scienceMicrowave sensorsPlasticityPolymersDe-embeddingInitial conditionsCoupling networkThermosetting polymerDielectricMicrowave devicesDielectric lossesMoldsDielectric materialsContinuous monitoringResonatorCoaxial resonatorsMetallic moldMicrowave dielectric propertiesTEORIA DE LA SEÑAL Y COMUNICACIONESCuringResonatorsElectrical and Electronic EngineeringMicrowavesInstrumentationCuring (chemistry)Cure processNon-invasive monitoringbusiness.industryDielectrometryCuring processCurved surfacesThermosetsMicrowave resonatorsReal timeElastomersThermoset materialsProcess monitoringCuring reactionsOptoelectronicsMaterials processingProcess controlDielectric lossCoaxialbusinessPlasticsMicrowave
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Steady states and nonlinear buckling of cable-suspended beam systems

2018

This paper deals with the equilibria of an elastically-coupled cable-suspended beam system, where the beam is assumed to be extensible and subject to a compressive axial load. When no vertical load is applied, necessary and sufficient conditions in order to have nontrivial solutions are established, and their explicit closed-form expressions are found. In particular, the stationary solutions are shown to exhibit at most two non-vanishing Fourier modes and the critical values of the axial-load parameter which produce their pitchfork bifurcation (buckling) are established. Depending on two dimensionless parameters, the complete set of resonant modes is devised. As expected, breakdown of the p…

Perturbation (astronomy)010103 numerical & computational mathematicsBiparametric resonance; Cable-suspended beam; Nonlinear oscillations; Pitchfork bifurcation; Stationary solutions; Suspension bridgeCable-suspended beam01 natural sciencesBiparametric resonanceNonlinear oscillationssymbols.namesakeStationary solutions0101 mathematicsNonlinear bucklingNonlinear OscillationsPhysicsMechanical EngineeringPitchfork bifurcationMechanicsCondensed Matter PhysicsSuspension bridge010101 applied mathematicsPitchfork bifurcationFourier transformBucklingMechanics of MaterialssymbolsAxial loadDimensionless quantity
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The structural and dielectric properties of the Na0.96Li0.04NbO3ceramics

2007

Ceramic samples Na0.96Li0.04NbO3 were obtained using ceramic technology. The phase and structural analysis, the microstructure, EDS and EPMA, dielectric and hysteresis loops measurements have been performed. The dielectric and hysteresis loops measurements of Na0.96Li0.04NbO3 have been carried out. The dielectric measurements were performed both without and under axial pressure up to 120 MPa. It was shown that Na0.96Li0.04NbO3 ceramics have orthorhombic symmetry at room temperature and undergo a first order phase transition at a temperature of about 570 K. The axial pressure shifts the phase transition temperature and decreases the hysteresis in field-polarisation and field-strain dependenc…

Phase transitionMaterials scienceAxial pressureElectron microprobeDielectricMicrostructureCondensed Matter::Materials ScienceHysteresisCrystallographyCondensed Matter::Superconductivityvisual_artPhase (matter)visual_art.visual_art_mediumGeneral Materials ScienceCeramicComposite materialInstrumentationPhase Transitions
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Capillary condensation in cylindrical pores: Monte Carlo study of the interplay of surface and finite size effects.

2010

When a fluid that undergoes a vapor to liquid transition in the bulk is confined to a long cylindrical pore, the phase transition is shifted (mostly due to surface effects at the walls of the pore) and rounded (due to finite size effects). The nature of the phase coexistence at the transition depends on the length of the pore: For very long pores the system is axially homogeneous at low temperatures. At the chemical potential where the transition takes place fluctuations occur between vapor-like and liquid-like states of the cylinder as a whole. At somewhat higher temperatures (but still far below bulk criticality) the system at phase coexistence is in an axially inhomogeneous multi-domain …

Phase transitionMaterials scienceStatistical Mechanics (cond-mat.stat-mech)Condensed matter physicsCapillary condensationMonte Carlo methodFOS: Physical sciencesGeneral Physics and AstronomyAdsorptionLattice (order)CylinderIsing modelPhysical and Theoretical ChemistryAxial symmetryCondensed Matter - Statistical MechanicsThe Journal of chemical physics
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

PhotoluminescenceMaterials sciencePhononExcitonBinding energyPolaritonsGeneral Physics and AstronomyMolecular physicssymbols.namesakeCondensed Matter::Materials Science:FÍSICA [UNESCO]PolaritonZinc compoundsThin filmPhotoluminescencebusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICAII-VI semiconductorsZinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layerssymbolsOptoelectronicsExcitonsRaman spectrabusinessRaman spectroscopyRaman scattering
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystals

2001

Samples of zinc telluride bulk single crystals, which were deformed in uniaxial compression, have been studied by photoluminescence (PL) and cathodoluminescence (CL). As a particular feature the deformed samples present a PL emission band peaked at 603 nm, whose intensity increases as the plastic deformation does. This band is related to the density of dislocations produced during the interaction of slip systems. This hypothesis is supported by CL images. which reveal the activation of the successive slip systems corresponding to different levels of deformation.

PhotoluminescenceMaterials scienceZinc tellurideCondensed matter physicsFísica de materialesMineralogyUniaxial compressionCathodoluminescenceCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsEmission bandchemistry.chemical_compoundchemistryMaterials ChemistryElectrical and Electronic EngineeringDislocationDeformation (engineering)Intensity (heat transfer)
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