Search results for "chalcogenide"
showing 10 items of 141 documents
Bismuth-Catalyzed Growth of SnS2 Nanotubes and Their Stability
2009
Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties.
2015
We present a simple two-stage vapour–solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as “catalysts” for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of…
Chalcogenide-capped triiron clusters [Fe3(CO)9(μ3-E)2], [Fe3(CO)7(μ3-CO)(μ3-E)(μ-dppm)] and [Fe3(CO)7(μ3-E)2(μ-dppm)] (E = S, Se) as proton-reduction…
2019
Chalcogenide-capped triiron clusters [Fe3(CO)7(μ3-CO)(μ3-E)(μ-dppm)] and [Fe3(CO)7(μ3-E)2(μ-dppm)] (E = S, Se) have been examined as proton-reduction catalysts. Protonation studies show that [Fe3(CO)9(μ3-E)2] are unaffected by strong acids. Mono-capped [Fe3(CO)7(μ3-CO)(μ3-E)(μ-dppm)] react with HBF4.Et2O but changes in IR spectra are attributed to BF3 binding to the face-capping carbonyl, while bicapped [Fe3(CO)7(μ3-E)2(μ-dppm)] are protonated but in a process that is not catalytically important. DFT calculations are presented to support these protonation studies. Cyclic voltammetry shows that [Fe3(CO)9(μ3-Se)2] exhibits two reduction waves, and upon addition of strong acids, proton-reducti…
Free-volume Study in GeS2-Ga2S3-CsCl Chalcohalide Glasses Using Positron Annihilation Technique
2015
Abstract Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in Ge-Ga-S glasses having different amount of CsCl additives. It is shown that the structural changes caused by CsCl additives can be adequately described by positron trapping modes determined within two-state model. The results testify in a favor of rather unchanged nature of corresponding free-volume voids responsible for positron trapping in the studied glasses, when mainly concentration of these traps is a subject to most significant changes with composition.
Influence of the age of amorphous nonannealed As2S3 thin films on holographic properties
1998
The dependences of the maximal first order diffraction efficiency and the corresponding specific recording energy on the holographic grating period were studied. Grating period was varied from 0.40 to 70.0 μm. Both fresh and aged films were used. A large holographic recording efficiency decrease in the course of aging is found to take place. These changes are due to the effective film grain size increase caused by the relaxational structural changes and atmospheric oxygen exposure. Results are explained with the aid of stress fields induced by the evaporation and holographic recording. The obtained results can be used to optimize the hologram recording in amorphous chalcogenide films.
Photosensitivity and second harmonic generation in chalcogenide arsenic sulfide poled glasses
2011
International audience; The present work investigates the photoinduced Second Harmonic Generation processes in thermally poled arsenic sulfide glasses. SHG Maker fringes patterns associated to SHG kinetic measurements about illumination and Raman spectroscopy have been conducted in order to bring new information which confirm the combined influence of charge carriers and mid-range glass structural modification on the poling and the photodarkening mechanisms.
Structural and Spectroscopic Studies of the PCP-Bridged Heavy Chalcogen-Centered Monoanions [HC(PPh2E)(PPh2)]− (E = Se, Te) and [HC(PR2E)2]− (E = Se,…
2009
Selenium- and tellurium-containing bis(diphenylphosphinoyl)methane monoanions were prepared by oxidation of the anion [HC(PPh2)2]− with elemental chalcogens. The selenium-containing isopropyl derivative was synthesized by generating [H2C(PiPr2)2] via a reaction between [H2C(PCl2)2] and 4 equiv of iPrMgCl prior to insitu oxidation with selenium followed by deprotonation with LiNiPr2. The solid-state structures of the lithium salts of the monochalcogeno anions TMEDA·Li[HC(PPh2E)(PPh2)] (E = Se (Li7a), E = Te (Li7b)) and the dichalcogeno anions TMEDA·Li[HC(PR2Se)2] (R = Ph (Li8a), iPr (Li8c)) revealed five- and six-membered LiEPCP and LiSePCPSe rings, respectively. The homoleptic group 12 comp…
Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature
1997
The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
Towards metal chalcogenide nanowire-based colour-sensitive photodetectors
2018
Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2016/6 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. Authors are grateful to Reinis Ignatans for XRD measurements.