Search results for "citation"
showing 10 items of 1710 documents
Atom-field dressed states in slow-light waveguide QED
2015
We discuss the properties of atom-photon bound states in waveguide QED systems consisting of single or multiple atoms coupled strongly to a finite-bandwidth photonic channel. Such bound states are formed by an atom and a localized photonic excitation and represent the continuum analog of the familiar dressed states in single-mode cavity QED. Here we present a detailed analysis of the linear and nonlinear spectral features associated with single- and multi-photon dressed states and show how the formation of bound states affects the waveguide-mediated dipole-dipole interactions between separated atoms. Our results provide a both qualitative and quantitative description of the essential strong…
Energy transfer in LH2 of Rhodospirillum Molischianum, studied by subpicosecond spectroscopy and configuration interaction exciton calculations.
2001
Two color transient absorption measurements were performed on a LH2 complex from Rhodospirillum molischianum by using several excitation wavelengths (790, 800, 810, and 830 nm) and probing in the spectral region from 790 to 870 nm at room temperature. The observed energy transfer time of ∼1.0 ps from B800 to B850 at room temperature is longer than the corresponding rates in Rhodopseudomonas acidophila and Rhodobacter sphaeroides. We observed variations (0.9-1.2 ps) of B800-850 energy transfer times at different B800 excitation wavelengths, the fastest time (0.9 ps) was obtained with 800 nm excitation. At 830 nm excitation the energy transfer to the B850 ring takes place within 0.5 ps. The m…
Controlled turbulence regime of electron cyclotron resonance ion source for improved multicharged ion performance
2020
Fundamental studies of excitation and non-linear evolution of kinetic instabilities of strongly nonequlibrium hot plasmas confined in open magnetic traps suggest new opportunities for fine-tuning of conventional electron cyclotron resonance (ECR) ion sources. These devices are widely used for the production of particle beams of high charge state ions. Operating the ion source in controlled turbulence regime allows increasing the absorbed power density and therefore the volumetric plasma energy content in the dense part of the discharge surrounded by the ECR surface, which leads to enhanced beam currents of high charge state ions. We report experiments at the ECR ion source at the JYFL accel…
Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties
2012
In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…
The role of structural disorder on luminescence of Eu-doped Na0.5Bi0.5TiO3
2020
A detailed analysis of photoluminescence of Eu-doped Na0.5Bi0.5TiO3 (NBT) is performed using it as a tool for describing the local structure of NBT. The obtained results reveal the low symmetry of the Eu3+ local environment in NBT, as indicated by the observed maximal number of sublevels of the 5D0→7F1 and the 5D0→7F2 luminescence transitions, clearly observed at low temperatures. Approximation of the luminescence spectra by Gaussian peaks provides valuable information about the shift of the involved levels upon change of the excitation wavelength. Variation in the strength of the crystal field in Eu-doped NBT is evaluated. Temperature dependence of the luminescence above room temperature i…
Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions
2009
InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present atthe non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the densit…
MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms
2016
The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Low-temperature luminescence of ScF3 single crystals under excitation by VUV synchrotron radiation
2020
The work was supported by the Latvian Science Council grant LZP-2018/2-0358. The research leading to this result has also been supported by the project CALIPSO plus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. The author is grateful to K. Chernenko (MAX IV Laboratory, Lund University) for his assistance during beamtime experiments and to A. I. Popov for the fruitful discussions. V.P. also acknowledges Valsts pētījumu programma “Augstas enerģijas fizika un paātrinātāju tehnoloģijas” (Projekta Nr. VPP-IZM-CERN-2020/1-0002). REFERENCES
Low-temperature luminescence of catangasite single crystals under excitation by vacuum ultraviolet synchrotron radiation
2020
The luminescent properties of Ca3TaGa3Si2O14 (CTGS, catangasite) single crystals have been studied by means of the vacuum ultraviolet excitation spectroscopy utilizing synchrotron radiation from 1.5 GeV storage ring of MAX IV synchrotron facility. Two emission bands at 320 nm (3.87 eV) and 445 nm (2.78 eV) have been detected. Examining excitation spectra in vacuum ultraviolet spectral range, the 320 nm emission band was explained as the emission band of self-trapped exciton in CTGS single crystal. Its atomic structure is discussed. It is also proposed that the 445 nm (2.78 eV) emission in the CTGS is due to the F centers, which have shown a well-resolved excitation (absorption) band at 5.1 …