Search results for "composites"
showing 10 items of 1905 documents
Investigation of optical and radiation properties of oxygen deficient silica glasses
1999
The deficiency of oxygen in pure silica manifests an absorption band at 5 eV as well as an absorption band of higher intensity at 7.6 eV. The band at 5 eV is associated with lone twofold-coordinated silicon centers. The nature of the main band at 7.6 eV has been studied using silica samples with different levels of oxygen deficiency. The excitation via the 7.6 eV band produces a photoelectric response as well as inner center and recombination type luminescence. Two main luminescence bands of the twofold-coordinated silicon center appear: a blue band (2.7 eV) and a UV band (4.4 eV). Induced absorption with several bands as well as thermally stimulated luminescence with complex peak structure…
Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass
2004
Formation processes of the peroxy radical (POR) were examined in high-purity SiO 2 glass exposed to F 2 -laser light which creates mobile atomic oxygen (O 0 ) by photolyzing the interstitial oxygen molecules (O 2 ). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O 0 , not by a reaction between the E' center (a silicon dangling bond) and O 2 . Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO 2 glass.
Fluorine laser-induced silicon hydride SiH groups in silica
2007
Abstract Formation and destruction of silicon hydride (Si–H) groups in silica by F 2 laser irradiation and their vacuum ultraviolet (VUV) optical absorption was examined by infrared (IR) and VUV spectroscopy. Photoinduced creation of Si–H groups in H 2 -impregnated oxygen deficient silica is accompanied by a growth of infrared absorption band at 2250 cm −1 and by a strong increase of VUV transmission at 7.9 eV. Photolysis of Si–H groups by 7.9 eV photons in this glass was not detected when the irradiation was performed at temperature 80 K. However, a slight destruction of Si–H groups under 7.9 eV irradiation was observed at the room temperature. This finding gives a tentative estimate of VU…
Gold coated porous silicon nanocomposite as a substrate for photoluminescence-based immunosensor suitable for the determination of Aflatoxin B1.
2017
Abstract A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Aflatoxin B1 (AFB1) has been developed. This immunosensor was based on porous silicon (PSi) covered by thin gold layer (Au) and modified by antibodies against AFB1 (anti-AFB1). PSi layer was formed on silicon substrate, then the surface of PSi was covered by 30 nm layer of gold (PSi/Au) using electrochemical and chemical deposition methods and in such ways PSi/Au (El.) and PSi/Au (Chem.) structures were formed, respectively. In order to find PSi/Au the most efficiently suitable for PL-based sensor design, structure several different PSi/Au (El.) and PSi/Au (Chem.) structures were…
Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
2003
Abstract Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2 and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2 layers are of the same nature as in stoichiometric SiO2 and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2 belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2 and thermal post-annealing leads to a huge violet luminescence (400 n…
Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations
2002
Abstract Thermally grown SiO 2 layers of thickness d =500 nm have been implanted by Ge + , Si + , and O + ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D i =5×10 16 ions/cm 2 . Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d m ≅250 nm of the SiO 2 layers. After thermal annealing to 900 °C for 1 h in dry nitrogen or vacuum the typical violet luminescence band ( λ =400 nm) of the Ge + implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. I…
Dibenzocycloheptatriene as end-group of Thiele and tetrabenzo-Chichibabin hydrocarbons
2020
The authors are grateful for the financial support from: MICIU/FEDER/AEI, Spain (PG2018-101181-B-I00, PGC2018-095808B-I00, MAT2016-80826-R, FIP-2018-HECTIC-PTM, Prometeo2019/076 and the "Severo Ochoa" Programme for Centres of Excellence in R & D; SEV-2015-0496), the European Research Council (ERC) (677023), DGR (Catalunya) (2017-SGR-918), and SNSF (Switzerland, TS., PZ00P2_174175). We thank the CSIRC-Alhambra and SciCore (Basel, Switzerland) for supercomputing facilities and the Servei de RMN, UAB, for instrument time.
A beam finite element for magneto-electro-elastic multilayered composite structures
2012
Abstract A new finite element based upon an elastic equivalent single-layer model for shear deformable and straight magneto-electro-elastic generally laminated beam is presented. The element has six degrees of freedom represented by the displacement components and the cross-section rotation of its two nodes. The magneto-electric boundary conditions enter the discrete problem as work-equivalent forces and moments while the electro-magnetic state characterization constitutes a post-processing step. The element possesses the superconvergence property for the static problem of beams with uniform cross-section and homogenous material properties along the beam axis direction. Moreover, it is free…
Effect of sodium bicarbonate treatment on mechanical properties of flax-reinforced epoxy composite materials
2017
This paper deals with the evaluation of the effect of an eco-friendly and cost-effective surface treatment based on the use of sodium bicarbonate on the mechanical properties of flax-reinforced epoxy composites. To this aim, unidirectional fabrics were soaked for five days in 5 and 10% in weight of sodium bicarbonate solution at 25℃. Quasi-static and dynamic mechanical tests were performed and the fracture surfaces of the composites were analyzed through scanning electron microscopy. Results evidenced that this treatment improves the fiber–matrix adhesion thus increasing the performances of the composites. Treating the fabrics with 10% w/w of bicarbonate solution leads to improvements of ∼…
Fast-growing willow (Salix viminalis) as a filler in polyethylene composites
2018
Abstract The study investigated the possibility of using wood flour obtained from fast-growing willow chips (Salix viminalis) as an alternative for standard hard- and softwood flours used in the production of wood polymer composites (WPCs). The composites contained willow flour and polyethylene matrix (OPCs) were prepared, characterized and compared with other WPCs which had been filled with hard- or softwood flours. Moreover, the structural and functional properties were investigated and discussed. Greater hemicellulose contents and lower lignin contents in OPCs resulted in better impact strength values of those materials. Which is interesting, the chemical composition of OPCs was found si…