Search results for "conductor"

Change of the vortex core structure in two-band superconductors at the impurity-scattering-driven s±/s++ crossover

2017

We report a nontrivial transition in the core structure of vortices in two-band superconductors as a function of interband impurity scattering. We demonstrate that, in addition to singular zeros of the order parameter, the vortices there can acquire a circular nodal line around the singular point in one of the superconducting components. It results in the formation of the peculiar “moat”-like profile in one of the superconducting gaps. The moat-core vortices occur generically in the vicinity of the impurity-induced crossover between s± and s++ states. peerReviewed

Variation of the optical absorption edge in AgGaS2 single crystals at high pressure

2003

In this paper the optical absorption edge of AgGaS 2 is measured as a function of pressure up to 26 GPa in order to verify the effect of the three phases transitions occurring in that pressure domain. The direct energy gap increases linearly with pressure at the rate of about 4.0 x 10 -2 eV GPa -1 up to 10.2 GPa. The absence of any discontinuity in the energy gap in the pressure range of 4.2-10.2 GPa confirms that the volume change, in the chalcopirite to monoclinic second-order transition, if it exists, is very small. When the pressure is raised above 10.2 GPa, the energy gap drops suddenly by about 1.1 eV and the spectral form of the absorption coefficient is typical of semiconductors wit…

Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure …

2003

In this paper we review some recent results on the electronic structure of III-VI layered semiconductors and its dependence under pressure, stressing the specific features that differentiate their behaviour from that of tetrahedrally coordinated semiconductors. We will focus on several unexpected results that have led to changes in the image that was currently accepted a few years ago. Intralayer bond angles change under pressure and the layer thickness remains virtually constant or increases. As a consequence, models based in intra- and inter-layer deformation potentials fail in explaining the low pressure nonlinearity of the band gap. Numerical-atomic-orbital/density-functional-theory ele…

Effect of Pressure on Direct Optical Transitions of ?-InSe

2000

We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…

X-ray-absorption fine-structure study of ZnSexTe1−x alloys

2004

X-ray-absorption fine-structure experiments at different temperatures in ZnSexTe1−x (x=0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the structural relaxation and disorder effects occurring in the alloys. First and second neighbor distance distributions have been characterized at the Se and Zn K edges, using multiple-edge and multiple-scattering data analysis. The first neighbor distance distribution was found to be bimodal. The static disorder associated with the Zn–Te distance variance did not depend appreciably on composition. On the other hand, the static disorder associated with the Zn–Se distance increased as the Se content dimi…

Magnetic Molecular Conductors

2005

Magnetic and Electronic Properties ofRENiBi (RE = Pr, Sm, Gd-Tm, Lu) Compounds

2008

Resistivity and magnetic measurements were used to examine the ternary rare earth compounds RENiBi (RE = Pr, Sm, Gd-Tm, Lu). These compounds order antiferromagnetically with TN below 16 K (RE = Pr, Sm, Gd-Tm) or are paramagnetic (LuNiBi). For some of these compounds a metal–insulator transition was found. The metal–insulator transition temperature depends strongly on the preparation conditions. Both the magnetic ground states and the resistance behavior are in good agreement with electronic band structure calculations.

Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility

2006

An exact solution is provided for the current density-voltage (J –V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type μ (E) = μ0 exp (γ √E. The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V /L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J1/βL and V /L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Peltier’s and Thomson’s coefficients of thermoelectric phenomena in the observable formulation

2011

Four transport coefficients characterize the thermoelectric properties of materials. Three of them are widely measured and studied. But the number of references on the Peltier coefficient are very limited. This unequal result is a consequence of the Onsager reciprocal relation (ORR). A review on the preciseness and accuracy of Peltier coefficient measurements has been developed in this paper. Thus we can appreciate a low level in the experimental confirmation for the ORR. In order to describe the thermoelectric processes in an advantageous way, the observable formulation has been used. This is characterized by the electric potential measured at the probe terminals and for the heat flux whic…

Phonon Scattering through a Local Anisotropic Structural Disorder in the Thermoelectric Solid Solution Cu_2Zn_(1−x)Fe_xGeSe_4

2013

Inspired by the promising thermoelectric properties of chalcopyrite-like quaternary chalcogenides, here we describe the synthesis and characterization of the solid solution Cu(2)Zn(1-x)Fe(x)GeSe(4). Upon substitution of Zn with the isoelectronic Fe, no charge carriers are introduced in these intrinsic semiconductors. However, a change in lattice parameters, expressed in an elongation of the c/a lattice parameter ratio with minimal change in unit cell volume, reveals the existence of a three-stage cation restructuring process of Cu, Zn, and Fe. The resulting local anisotropic structural disorder leads to phonon scattering not normally observed, resulting in an effective approach to reduce th…