Search results for "conductor"
showing 10 items of 1270 documents
Vapor-Deposited Perovskites: The Route to High-Performance Solar Cell Production?
2017
Summary High-quality semiconducting perovskites can be easily synthesized through several methods. The ease of fabrication has favored the adoption of lab-scale solution-processing techniques, which have yielded the highest performing devices. Most of these processes, however, are not directly applicable to larger scale and volume preparations, hindering the consolidation and market entry of this technology. Vapor-based methods, a mature technology widely adopted in the coating and semiconductor industry, could change this trend. Their application to perovskite solar cells includes a large amount of fabrication approaches, offering versatility in the employed materials as well as in the cha…
Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities
2003
Wet oxidation of GaAs/AlGaAs structures is an important technique in the processing of advanced devices such as vertical cavity surface emitting lasers (VCSELs). In one VCSEL application, the low-index and electrically-insulating AlxOy layers have been used to obtain high-reflectivity and broad bandwidth distributed Bragg reflector mirrors (DBRs). A further recent development has shown that combined lateral–vertical oxidation of intracavity AlGaAs layers can be used to tune the resonant wavelength of a semiconductor microcavity. The slow oxidation rate limits the lateral scale of practical wet oxidation to mesas structures of 50–100 μm in width. Therefore post-processing assessment of spect…
Bottom‐Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films
2018
Though generally considered insulating, recent progress on the discovery of conductive porous metal-organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal-organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high-quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self-assembled monolayer substrate modification and bottom-up techniques are used to produce preferentially oriented, ultrathin, con…
The electronic properties of SrTiO3-δ with oxygen vacancies or substitutions
2021
The authors would like to thank R. Dittmann for useful discussions, T. Kocourek, O. Pacherova, S. Cichon, V. Vetokhina, and P. Babor for their contributions to sample preparation and characterization. The authors (M.T., A.D.) acknowledge support from the Czech Science Foundation (Grant No. 19-09671S), the European Structural and Investment Funds and the Ministry of Education, Youth and Sports of the Czech Republic through Programme “Research, Development and Education” (Project No. SOLID21 CZ.02.1.01/0.0/0.0/16-019/0000760). This study was partly supported by FLAG-ERA JTC project To2Dox (L.R. and E.K.). Calculations have been performed on the LASC Cluster in the Institute of Solid State Phy…
Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy
2019
Björn Matthey (Fraunhofer IKTS, Dresden) is acknowledged for providing HfO2 and ZrO2 powders on short notice after DESY’s renowned customs office punished us. Parts of this research were carried out at Petra III at DESY, a member of the Helmholtz Association (HGF). The experiments on single Si:HfO2 thin film samples were performed at the CLAESS beamline at ALBA Synchrotron with the collaboration of ALBA staff. We would like to thank Edmund Welter for assistance (in using beamline P65) and DESY for enabling this research for proposal no. 20160591 and for travel support. T.S. acknowledges the German Research Foundation (DFG) for funding this work in the frame of the project “Inferox” (project…
Convergence of the finite volume method for a conductive-radiative heat transfer problem
2013
We show that the finite volume method rigorously converges to the solution of a conductive-radiative heat transfer problem with nonlocal and nonlinear boundary conditions. To get this result, we start by proving existence of solutions for a finite volume discretization of the original problem. Then, by obtaining uniform boundedness of discrete solutions and their discrete gradients with respect to mesh size, we finally get L 2type convergence of discrete solutions.
Gradient estimates for the perfect conductivity problem in anisotropic media
2018
Abstract We study the perfect conductivity problem when two perfectly conducting inclusions are closely located to each other in an anisotropic background medium. We establish optimal upper and lower gradient bounds for the solution in any dimension which characterize the singular behavior of the electric field as the distance between the inclusions goes to zero.
A Low Cost Solution for 2D Memory Access
2006
Many of the new coding tools in the H.264/AVC video coding standard are based on 2D processing resulting in row-wise and column-wise memory accesses starting from arbitrary memory locations. This paper proposes a low cost solution for efficient realization of these 2D block memory accesses on sub-word parallel processors. It is based on the use of simple register-based data permutation networks placed between the processor and memory. The data rearrangement capabilities of the networks can further be extended with more complex control schemes. With the proposed control schemes, the networks enable row and column accesses from arbitrary memory locations for blocks of data while maintaining f…
Creating stable Floquet–Weyl semimetals by laser-driving of 3D Dirac materials
2017
Nature Communications 8, 13940 (2017). doi:10.1038/ncomms13940
Effect of a fluctuating electric field on electron spin dephasing in III-V semiconductors
2011
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor bulks driven by a static electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation lengths are computed through the D’yakonov-Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. Since semiconductor based devices are always imbedded into a noisy environment that can strongly affect their performance, the decay of initial spin polarization of conduction electrons is calculat…